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Price, W. E.

Publications and source records attributed to Price, W. E..

35 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Single event upset sensitivity of low power Schottky devices

Data taken from tests involving heavy ions in the Berkeley 88 in. cyclotron being directed at low power Schottky barrier devices are reported. The tests also included trials in the Harvard cyclotron with 130 MeV protons, and at the U.C. Davis cyclotron using 56 MeV protons. The experiments were performed to study the single event upsets in MSI logic devices containing flip-flops. Results are presented of single-event upsets (SEU) causing functional degradation observed in post-exposure tests of six different devices. The effectiveness of the particles in producing SEUs in logic device functioning was found to be directly proportional to the proton energy. Shielding was determined to offer negligible protection from the particle bombardment. The results are considered significant for the design and fabrication of LS devices for space applications.

Price, W. E.↗
NASA NTRS1982

The dependence of single event upset on proton energy /15-590 MeV/

Low earth orbit satellite and Jupiter orbiter probe semiconductor devices may incur soft errors or single event upsets, manifested as bit flips, during exposure to such nuclear particles or heavy ions as trapped protons with energies ranging up to 1000 MeV. Experimental data is given on the average proton fluence needed to cause a bit flip as a function of proton energy for isoplanar bipolar TTL RAMs. Error dependence data shape and threshold energy can be related to the existing body of theoretical data on energy deposition following proton nuclear reactions. Experimental data also show that the relative cross sectional amplitude for functionally identical devices can be related to the device's power consumption.

Nichols, D. K.↗
NASA NTRS1982

Total-dose radiation effects data for semiconductor devices, volume 3

Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

Price, W. E.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 2

Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

Price, W. E.↗
NASA NTRS1981

Cosmic ray induced errors in I2L microprocessors and logic devices

Large-scale integrated (LSI) devices fabricated with integrated injection logic (I2L) were studied by both heavy ion experiments and device analysis to determine the upset threshold, the charge collection volumes and ultimately the probability for upset in the galactic cosmic ray spectrum. The devices studied, the SEP9900A, the SBP9989 and the P-Code generator were fabricated by Texas Instruments, Inc.

Price, W. E.↗
NASA NTRS1981

A prediction model for bipolar RAMs in a high energy ion/proton environment

A model has been developed which predicts the relative susceptibility of bipolar RAMs to heavy ion and proton upset. During the course of evaluating this model, physical and electrical variations were also evaluated indicating that the minimum internal signal level is the primary upset susceptibility indicator. Unfortunately, all of the physical and electrical variations expected during a normal product development cycle are in direct opposition to improved high-energy particle upset tolerance. Hence, a trade-off between highly susceptible, low power (medium speed) devices must be made against the less susceptible, higher power (high speed) equivalent device, taking into account the systems trade-off with respect to system power, software, error correction procedures and/or circuit redundancy.

Myers, D. K.↗
NASA NTRS1981

Investigation for single-event upset in MSI devices

The reported investigation shows that low-power TTL, standard TTL, low-power Schottky, and Schottky devices are all subject to upset by heavy ions. Low-power Schottky was the most sensitive of the device technologies tested. No evidence was found to correlate sensitivity to cosmic rays with any particular device manufacturer. The probability of upset of the logic devices is comparable to that of RAM's on a per-flip-flop basis, based on RAM data obtained by Kolasinski et al. (1979). The testing was performed by subjecting the devices to 120 MeV krypton ions from a cyclotron.

Woods, J. P.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 1

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

Price, W. E.↗
NASA NTRS1980

A study of single event upsets in static RAM's

Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.

Price, W. E.↗
NASA NTRS1979

Simulation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories

Soft errors have been induced in solid-state static RAM's by iron nuclei from the Lawrence Berkeley Laboratory (LBL) Bevalac, in experiments designed to prove the ability of iron-group cosmic rays to generate such errors. Subsequently, various delidded device types were tested in beams of argon and krypton ions from the LBL 88-inch Cyclotron, at energies near 2 MeV/nucleon. The latter tests showed that some devices are essentially immune to bit error while others are quite susceptible. Good agreement was obtained with model predictions in cases where the latter exist. Latchup, whose cause is attributed to individual heavy ions, was also observed in some device types.

Kolasinski, W. A.↗
NASA NTRS1979

Designer's guide to radiation effects on materials for use on Jupiter fly-bys and orbiters

This paper summarizes the state-of-the-art of the complex field of radiation effects on spacecraft materials. It is intended as a guide for designers of systems exposed to damaging electrons and protons. The emphasis is on the relative damage levels for the more common materials that may be used. Information on the preliminary flux and fluence levels of the yet to be designed Jupiter orbiter, Galileo, is also presented.

Bouquet, F. L.↗
NASA NTRS1978

Voyager electronic parts radiation program. Volume 2: Test requirements and procedures

Documents are presented outlining the conditions and requirements of the test program. The Appendixes are as follows: appendix A -- Electron Simulation Radiation Test Specification for Voyager Electronic Parts and Devices, appendix B -- Electronic Piece-Part Testing Program for Voyager, appendix C -- Test Procedure for Radiation Screening of Voyager Piece Parts, appendix D -- Boeing In Situ Test Fixture, and appendix E -- Irradiate - Anneal (IRAN) Screening Documents.

Stanley, A. G.↗
NASA NTRS1977

Voyager electronic parts radiation program, volume 1

The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized.

Stanley, A. G.↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

Judicious choice of radiation dose and parameter change acceptance criteria, absence of anomalous anneal phenomena, and absence of anomalous reirradiation effects are recognized as essential for a successful irradiation-anneal (IRAN) screening procedure to ensure that no device will fall, upon reirradiation, above parametric limits assigned for the worst case application. Reirradiation and irradiation-anneal behavior of various semiconductor devices are compared and those that do not lend themselves to IRAN screening are singled out. Information needed to judge the suitability of an IRAN type screening program is detailed. Reasons for success of the limited IRAN screening of flight parts for the Mariner Jupiter/Saturn (MJS '77) spacecraft are indicated.

Stanley, A. G.↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗