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Powell, J. A.

Publications and source records attributed to Powell, J. A..

At least 37 records · Page 2

Growth of improved quality 3C-SiC films on 6H-SiC substrates

Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). It is found that growth on as-grow faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 microns thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.

Powell, J. A.

In situ ozone measurements within the 1987 Antarctic ozone hole from a high-altitude ER-2 aircraft

In situ ozone measurements were made from the ER-2 aircraft during the 1987 Airborne Antarctic Ozone Experiment both inside and outside the ozone hole. Midday measurements from late August until late September during aircraft ascent near 53 deg S latitude indicate no clear temporal trend in ozone mixing ratio but instead reflect the distance of the measurement from the chemically perturbed region. The measurements made within the ozone hole at 72 deg S show altitude-dependent decreases in ozone of 61 percent at a potential temperature of 425 K down to 39 percent at 365 K. Temporal trends are also calculated at various positions relative to the boundary of the chemically perturbed region to locate the region of large ozone decreases and thereby accurately locate the boundary of the ozone hole.

Proffitt, M. H.

Evidence for diabatic cooling and poleward transport within and around the 1987 Antarctic ozone hole

Atmospheric dynamics at altitudes of 17.5-19 km were analyzed using measurements of N2O, total water, total odd-nitrogen species, and potential vorticity (derived from pressures, temperatures, and wind speeds) obtained aboard the ER-2 aircraft flown in the period between August 23 and September 22 during the Airborne Antarctic Ozone Experiment. Results indicated a consistent gradual poleward movement of air, extending from about 10 deg in latitude outside the boundary of the ozone hole to about 5 deg inside. Evidence is presented of ongoing diabatic cooling throughout this zone, both inside and outside the chemically perturbed region.

Profitt, M. H.

A chemical definition of the boundary of the Antarctic ozone hole

A program designed to study the Antarctic ozone hole using ER-2 high-altitude and DC-8 aircraft was conducted out of Punta Arenas, Chile during August 17-September 22, 1987. Graphs are presented of ozone and chlorine monoxide when crossing the boundary of the chemically perturbed region on August 23 and on September 21. Interpretations of ClO, H2O, and N2O measurements are presented, indicating ongoing diabetic cooling and advective poleward transport across the boundary.

Proffitt, M. H.

Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system

A set of formulas for a generalized axial stress in diamond and zinc-blende semiconductors under axial stress is derived to calculate stress-related Raman shifts. By analyzing known Raman data on cubic SiC under hydrostatic pressures, one of the Raman-stress coefficients was obtained, and the existing elastic stiffness constants of cubic SiC were optimized. A method for calculating the stress and strain in SiC films on (100) Si is proposed. It is suggested that the stress and strain expressions and the method of the stress and strain determinations in heterostructures are quite general and may be used for other systems.

Feng, Z. C.

Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si

Low-temperature photoluminescence studies of 26 cubic SiC films, ranging in thickness from 600 A to 25 microns, grown by CVD on (100)Si are presented. It is suggested that the G band near 1.90-1.92 eV and its phonon side bands G1 and G2 are related to dislocations and extended defects. Formulas for the band-gap shift due to an axial stress have been obtained and applied to the CVD 3C-SiC/Si system. The results indicate that a 1-3-micron transition layer greatly reduces the interface misfit strain, and that biaxial stress in the SiC/Si system depresses the intensity of the no-phonon line.

Choyke, W. J.

Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100)Si

Raman scattering studies for a series of CVD-grown cubic SiC single-crystal films with film thickness from 600 A to 17 microns are discussed. The results suggest that the crystalline orientations of the Si substrate and the 3C-SiC film are the same. It is found that the Si 522/cm phonon from a Si wafer is enhanced in intensity by a factor of 2-3 due to a CVD overlayer of cubic SiC, and that the 3C-SiC longitudinal optical phonon at the Gamma point from SiC/Si samples is enhanced by a factor of two or three following the removal of the Si substrate. The variation of the Raman spectrum with incident power is investigated, and a method for determining the Raman cross section for 3 C-SiC is proposed.

Feng, Z. C.

Temporal trends and transport within and around the Antarctic polar vortex during the formation of the 1987 Antarctic ozone hole

During AAOE in 1987 an ER-2 high altitude aircraft made twelve flights out of Punta Arenas, Chile (53 S, 71 W) into the Antarctic polar vortex. The aircraft was fitted with fast response instruments for in situ measurements of many trace species including O3, ClO, BrO, NO sub y, NO, H2O, and N2O. Grab samples of long-lived tracers were also taken and a scanning microwave radiometer measured temperatures above and below the aircraft. Temperature, pressure, and wind measurements were also made on the flight tracks. Most of these flights were flown to 72 S, at a constant potential temperature, followed by a dip to a lower altitude and again assuming a sometimes different potential temperature for the return leg. The potential temperature chosen was 425 K (17 to 18 km) on 12 of the flight legs, and 5 of the flight legs were flown at 450 K (18 to 19 km). The remaining 7 legs of the 12 flights were not flown on constant potential temperature surfaces. Tracer data have been analyzed for temporal trends. Data from the ascents out of Punta Arenas, the constant potential temperature flight legs, and the dips within the vortex are used to compare tracer values inside and outside the vortex, both with respect to constant potential temperature and constant N2O. The time trend during the one-month period of August 23 through September 22, 1987, shows that ozone decreased by 50 percent or more at altitudes form 15 to 19 km. This trend is evident whether analyzed with respect to constant potential temperature or constant N2O. The trend analysis for ozone outside the vortex shows no downward trend during this period. The analysis for N2O at a constant potential temperature indicates no significant trend either inside or outside the vortex; however, a decrease in N2O with an increase in latitude is evident.

Proffitt, M. H.

Improved beta-SiC heteroepitaxial films using off-axis Si substrates

All beta-SiC films grown using on-axis (001) Si substrates that have been examined with transmission electron microscopy exhibit a high density of interfacial twins, stacking faults, and antiphase disorder. The antiphase boundaries can be decorated by chemical etching, sputter etching, wet oxidation, and beta-SiC growth in the presence of diborane. All traces of antiphase disorder are eliminated when the heteroepitaxial growth is carried out on vicinal (001) Si substrates that are tilted 2 deg about a 110-line axis. In addition, growth on the off-axis Si produces beta-SiC films that are significantly smoother than on-axis films. The density of stacking faults is apparently unaffected by growth on the off-axis substrates.

Powell, J. A.

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.

Antiphase boundaries in epitaxially grown beta-SiC

When the surface of beta-SiC, grown epitaxially on (001) silicon by chemical vapor deposition, is chemically etched, boundaries appear which may be observed by optical or scanning electron microscopy. Examination by plan-view and cross-sectional transmission electron microscopy shows boundaries in the film which exhibit line or fringe contrast. Convergent beam electron diffraction has been used to show that these boundaries separate domains that are in an antiphase relationship to each other. A model is presented which discusses the formation of these domains from independent nucleation on a stepped substrate surface.

Pirouz, P.

Lattice defects in beta-SiC grown epitaxially on silicon substrates

Defects generated on beta-SiC grown on a (001) silicon substrate by chemical vapor deposition are characterized and their mechanism of formation discussed. It is argued that nucleation plays a primary role in this heteroepitaxial system where the lattice mismatch is so large.

Pirouz, P.

Microscopy of epitaxially grown beta-SiC on 001-plane silicon

Various defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.

Pirouz, P.

Silicon carbide, a high temperature semiconductor

Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.

Powell, J. A.

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

A reproducible process is described for growing a thick single-crystal layer of cubic SiC on a single-crystal Si wafer by chemical vapor deposition. A buffer layer, grown in situ, is used between the cubic SiC and the Si substrate to minimize the effect of lattice mismatch. Layers of up to 34 microns thick and several sq cm in area have been grown. Wafers are obtained by chemically removing the Si substrates from the grown layers. Excellent electron channeling patterns produced by these wafers indicate very good crystal quality. Preliminary electrical measurements have yielded electron mobilities up to 380 sq cm/Vs.

Nishino, S.

Silicon carbide, a high temperature semiconductor

Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Potential materials for these devices are compared and the problems of each are discussed. Recent progress in developing silicon carbide as a high temperature semiconductor is described.

Powell, J. A.

High-Speed Laser Anemometer

New high-speed laser anemometer system rapidly and efficiently maps gas-flow velocities within rotating blade rows of turbomachinery. Small seed particles entrained in gas flow fluoresce when they pass through probe volume, which is the fringe pattern formed by intersecting laser beams. Transit time of particles is obtained by use of suitable optics, photomultiplier tube and electronic signal processor. Data are then sent to a minicomputer.

Powell, J. A.

High-speed laser anemometer system for intrarotor flow mapping in turbomachinery

A fringe-type laser anemometer with innovative features is described. The innovative features include: (1) rapid, efficient data acquisition processes, (2) detailed graphic display of data being accumulated, and (3) input laser-beam positioning that allows greater optical access to the intrarotor region. Results are presented that demonstrate the anemometer's capability in flow mapping within a transonic axial-flow compressor rotor.

Powell, J. A.