Transition metal impurities in semiconductors
Crystal field theory applied transition metal impurities in semiconductors
Engineering topics
Publications and source records attributed to Pearson, G. L..
Crystal field theory applied transition metal impurities in semiconductors
Lattice vibration spectra and energies of two- phonon summation bands and reststrahlen bands in gallium arsenide phosphide single crystals
Gunn oscillations in indium arsenide, measuring electrical properties of diodes, noting current voltage characteristics as function of applied stress
Carrier motion equation in Gunn diode in terms of average drift velocity and diffusion coefficient
Ternary phase diagrams for gallium-phosphorus-zinc and gallium-arsenic-zinc systems with diffusion problem applications
Optical, electrical, and metallurgical properties of GaAsP alloy system and GaP related to their use as semiconducting materials
Studies of metallurgical, electrical, and optical properties of gallium phosphide
Dependence of threshold field for Gunn oscillations on energy minima separation, noting decrease under uniaxial stress
Hall effect, electrical resistivity and optical transmission data and Co impurities in GaP studied via crystal field theory
Current oscillation characteristics of GaAs above certain treshold electric field, noting GaAsP Gunn diode data
Crystal field spectra of energy level state impurities in periodic groups II to VI and III to V compound semiconductors