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Pearson, G. L.

Publications and source records attributed to Pearson, G. L..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Auger depth profiling of Au-Al/x/Ga/1-x/As interfaces and LPE Al/x/Ga/1-x/As-GaAs heterojunctions

An attempt is made to report Auger depth profiles produced in a UHF ion-milling Auger system for intentionally 'graded' Al(x)Ga(1-x)As-GaAs heterojunctions, 'abrupt' growth heterojunctions of the same material, and Au-Al(x)Ga(1-x)As interfaces. It is found that the interface widths of the 'abrupt' growth heterojunctions did not fluctuate greatly from an average value of 110 A and that 'graded' growth samples had interface widths of about 525 to 1500 A. The results for the Au-containing samples indicate that an oxide layer was present between the Au and the Al(x)Ga(1-x)As.

Garner, C. M.↗
NASA NTRS1977

Auger profiling of 'abrupt' LPE Al/x/Ga/1-x/As-GaAs heterojunctions

Auger analysis in conjunction with ion milling was used to study depth profiles of 'abrupt' Al/x/Ga/1-x/As-GaAs heterojunctions grown by liquid-phase epitaxial (LPE) techniques. Results are presented on samples with x = 0.43, 0.60, and 0.85. The interface widths obtained are listed in a table together with the growth conditions and the layer thicknesses. The values for the layer thicknesses are in the range from 125 to 950 A. It is found that for thin layers the interface widths do not differ greatly from the average value of 110A.

Garner, C. M.↗