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Outlaw, R. A.

Publications and source records attributed to Outlaw, R. A..

At least 37 records · Page 2

Permeation of oxygen through high purity, large grain silver

The permeation of high purity, large grain Ag membranes by oxygen has been studied over the temperature range 400 to 800 C. The permeability was found to be quite linear and repeatable, but the magnitude was 3.2 times smaller than that determined by past research. Since previous investigators studied substantially less pure Ag and conducted experiments within much poorer vacuum environments (which indicates that their grain boundary density was much greater), the data presented here suggest oxygen transport through the membrane is primarily by grain boundary diffusion. The diffusivity measurements were found to exhibit two distinct linear regions, one above and one below a critical temperature of 630 C. The high-temperature data have an activation energy (11.1 kcal/mole) similar to that reported by others, but the low-temperature data have a higher activation energy (15.3 kcal/mole), which can be explained by impurity trapping in the grain boundaries. Vacuum desorption of the oxygen-saturated Ag was found to occur at a threshold of 630 C, which is consistent with the onset of increased mobility within the grain boundaries.

Outlaw, R. A.

Electron stimulated desorption of atomic oxygen from silver

The electron stimulated desorption (ESD) of neutral oxygen atoms from polycrystalline silver and of oxygen ions from Ag(110) has been studied. Polycrystalline Ag charged with (16)O2 and (18)O2 and bombarded by low-energy electrons (approx 100 eV) under ultrahigh vacuum (UHV) conditions emitted O atom flux levels of 1 x 10 to the 12th power/sq cm/s at a Ag temperature of 300 C. The flux was detected with a quadrupole mass spectrometer operating in the appearance potential mode. The neutral cross section at about 100 C was determined to be 7 x 10 to the -19 sq cm. Ancillary experiments conducted in a UHV chamber equipped with a cylindrical mirror analyzer and rigged for ion energy distribution and ion angular distribution were used to study O ions desorbed from Ag(110). Two primary O(+) energies of 2.4 and 5.4 eV were detected from the Ag(110) after having been dosed with 2500 L of (16)O2. It also appears that in both experiments there was strong evidence for directionality of the emitted flux. The results of this study serve as a proof of concept for the development of a laboratory atomic oxygen beam generator that simulates the gas flux environment experienced by orbiting vehicles.

Outlaw, R. A.

Precise-Conductance Valve Insert

Valve modification provides two operating modes fully open and small, precise leak. Copper insert with radially oriented holes allows small, controllable, precise effusion rate when valve closed or nearly unobstructed flow when valve open. Numerous applications in surface physics, vacuum physics, materials science, gas kinetics, thin films, and other areas of research requiring measured flows of gas into or out of system.

Outlaw, R. A.

Analysis of the physical atomic forces between noble gas atoms, alkali ions and halogen ions

The physical forces between atoms and molecules are important in a number of processes of practical importance, including line broadening in radiative processes, gas and crystal properties, adhesion, and thin films. The components of the physical forces between noble gas atoms, alkali ions, and halogen ions are analyzed and a data base for the dispersion forces is developed from the literature based on evaluations with the harmonic oscillator dispersion model for higher order coefficients. The Zener model of the repulsive core is used in the context of the recent asymptotic wave functions of Handler and Smith; and an effective ionization potential within the Handler and Smith wave functions is defined to analyze the two body potential data of Waldman and Gordon, the alkali-halide molecular data, and the noble gas crystal and salt crystal data. A satisfactory global fit to this molecular and crystal data is then reproduced by the model to within several percent. Surface potentials are evaluated for noble gas atoms on noble gas and salt crystal surfaces with surface tension neglected. Within this context, the noble gas surface potentials on noble gas and salt crystals are considered to be accurate to within several percent.

Wilson, J. W.

Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition

Thin-film Ge single crystals (approx. 10 microns) have been epitaxially grown on polished NaCl(100) substrates at 450C by using plasma-enhanced chemical vapor deposition. Films on approximately 1 sq cm and larger were separated from the NaCl by either melting the salt or by differential shear stress upon cooling to room temperature. The ordered growth of the Ge was found to be most sensitive to the initial plasma power and to the continuum flow dynamics within the carbon susceptor. The films were visually specular and exhibited a high degree of crysalline order when examined by X-ray diffraction. The films were found to be p-type with a carrier concentration of approximately 3 x 10 to the 16th power/cu cm, a resistivity of 0.11 ohm-cm, and a Hall hole mobility of 1820 sq cm/v/s at room temperature. Vacuum firing minimized the primary contaminant, Na, and corresponding lowered the carrier concentration to 4 x 10 to the 14th power/cu cm.

Outlaw, R. A.

High-Quality, Thin-Film Germanium Single Crystals

Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.

Outlaw, R. A.

Finite size corrections to Madelung number

It is customary in the study of ionic crystals to assume that the ions are point charges at their respective lattice sites; the corresponding electrostatic energy of one such ion is reducible to Madelung's form, where the Madelung number has a value of 1.7467. This paper considers the modifications in the electrostatic energy when the atomic finite size is treated in more detail. The results are tabulated as a direct correction to Madelung's number for alkali halide cubic crystals.

Wilson, J. W.

Refined potentials for rare gas atom adsorption on rare gas and alkali-halide surfaces

The utilization of models of interatomic potential for physical interaction to estimate the long range attractive potential for rare gases and ions is discussed. The long range attractive force is calculated in terms of the atomic dispersion properties. A data base of atomic dispersion parameters for rare gas atoms, alkali ion, and halogen ions is applied to the study of the repulsive core; the procedure for evaluating the repulsive core of ion interactions is described. The interaction of rare gas atoms on ideal rare gas solid and alkali-halide surfaces is analyzed; zero coverage absorption potentials are derived.

Wilson, J. W.

Proton damage in GaAs solar cells

A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.

Wilson, J. W.

Free-standing thin film Ge single crystals grown by plasma-enhanced chemical vapor deposition

The films, which are approximately 10 microns in thickness, are grown epitaxially on polished (100) NaCl substrates at 450 C by plasma enhanced chemical vapor deposition. Upon cooling, the films are separated from the substrate by differential shear stress, leaving free-standing films of Ge which can be handled. Growths are attained by nucleating at minimum plasma power for very brief intervals and then raising the power to 65 W to increase the growth rate to approximately 10 microns/h. It is found that substrate exposure to the plasma at too high a power for too long a time sputters and erodes the surface, thereby substantially degrading the nucleation process and the ultimate growths. It is noted that the free-standing films are visually specular and exhibit a high degree of crystalline order when examined by X-ray diffraction. Auger electron spectroscopy and energy dispersive analysis of X-rays reveal no detectable bulk contamination.

Outlaw, R. A.

The diffusivity of hydrogen in Nb stabilized stainless steel

The evolution of hydrogen from 347 stainless steel has been studied by using a real time dynamic technique under ultrahigh vacuum conditions. Auger electron spectroscopy was used to determine the surface composition as a function of time and temperature. The surface film on the electropolished samples was found to be approximately 15 A thick and consisted of a carbon-oxygen complex and a metal oxide (FexOy). Upon heating to 400 C, the carbon-oxygen complex desorbed as CO and the remaining oxygen and carbon began to incorporate. Also at this temperature sulfur began to diffuse out of the bulk to the surface and at approximately 800 C formed a complete monolayer. At 900 C, carbon and oxygen virtually disappeared, leaving the monolayer of sulfur as the only surface contaminant. The hydrogen diffusivity was found to follow closely the equation D = 7.01 x 10 to the -7th exp(-48.0/RT) sq m per second over the entire temperature range studied, thus indicating that hydrogen evolution is not significantly affected by the changing surface composition. The somewhat higher value of the diffusivity obtained in this work compared to past measurements in austenitic stainless steels may indicate the importance of sample preprocessing and ultrahigh vacuum conditions in minimizing the effects of surface layers.

Outlaw, R. A.

A potential-energy scaling model to simulate the initial stages of thin-film growth

A solid on solid (SOS) Monte Carlo computer simulation employing a potential energy scaling technique was used to model the initial stages of thin film growth. The model monitors variations in the vertical interaction potential that occur due to the arrival or departure of selected adatoms or impurities at all sites in the 400 sq. ft. array. Boltzmann ordered statistics are used to simulate fluctuations in vibrational energy at each site in the array, and the resulting site energy is compared with threshold levels of possible atomic events. In addition to adsorption, desorption, and surface migration, adatom incorporation and diffusion of a substrate atom to the surface are also included. The lateral interaction of nearest, second nearest, and third nearest neighbors is also considered. A series of computer experiments are conducted to illustrate the behavior of the model.

Heinbockel, J. H.

A potential energy scaling Monte Carlo simulation of thin film nucleation and growth

The initial growth of thin Ge fims on the (100) surface of an Fe substrate is investigated theoretically by means of Monte Carlo simulations based on a potential-energy-scaling technique. The substrate is modeled as a 20 x 20-square array with periodic boundary conditions, as described by Heinbockel et al. (1983), and the movement of surface atoms under the influence of the substrate interaction potential and the lateral interaction of neighboring atoms is explored via continuous updating (on the time scale of single events) of the potential energy at each site in the array. Results for the clustering of nine dispersed atoms over 1.0 s at 600 K and for deposition at 5 x 10 to the -14th/sq cm s over 2.0 s at 500 K are presented graphically.

Outlaw, R. A.

Measuring Hydrogen Properties in Aluminum

System in use at Langley Research Center measures concentration and diffusion coefficient of hydrogen in pure aluminum. Principal components are high-temperature ultra-high-vacuum furnace and quadrupole mass spectrometer. Quantities of hydrogen and other gases that evolve from heated metal are measured in real time and correlated with data on aluminum porosity.

Outlaw, R. A.

Precision manipulator heating and cooling assembly compatible with sample transfer

A technique is described for the transfer of a UHV sample system to a precision manipulator. It allows direct sample temperature measurement in a broad range of sample temperatures (150-1750 K) and simultaneously retains the benefit of the additional degree of freedom provided by the precision manipulator flip mechanism. The technique is similar to that reported by Crider (1976) but with several modifications. The pump is mounted at the extreme end of the magnetically coupled linear motion feedthrough (to maximize the separation). Samples are mounted on a threaded circular sample holder, transferred to the flip mechanism of the manipulator. The flip mechanism contains a rear electrode assembly and thermocouple, in direct contact with the sample, and a copper plate and a flexible strap are attached to the receiving block (to facilitate sample cooling).

Outlaw, R. A.

A model for proton-irradiated GaAs solar cells

A simple model for proton radiation damage in GaAs heteroface solar cells is developed. The model includes the effects of spatial nonuniformity of low energy proton damage. Agreement between the model and experimental proton damage data for GaAs heteroface solar cells is satisfactory. An extension of the model to include angular isotropy, as is appropriate for protons in space, is shown to result in significantly less cell damage than for normal proton incidence.

Wilson, J. W.

A simple model of proton damage in GaAs solar cells

A simple proton damage model for GaAs solar cells is derived and compared to experimental values of change in short circuit currents. The recombination cross section associated with the defects was determined from the experimental comparison to be approximately 1.2 x 10 to the -13th power sq cm in fair agreement with values determined from the deep level transient spectroscopy technique.

Wilson, J. W.

Hydrogen outgassing considerations for an orbiting aluminum molecular shield

A molecular shield and associated hardware made of pure aluminum is shown to have an outgassing rate sufficiently low so that operations in orbit would undergo less density contributions than that present from the upper atmospheric atomic hydrogen contribution. Measurements of the atomic hydrogen outgassing from baked-out 6061 aluminum cylindrical samples 3 mm thick are demonstrated to be less than 1/100 trillion l/sec per sq cm, comparable to that of austenitic stainless steels. Calculations of the density distribution with a hemispherical molecular shield are presented, and the elimination of porosity in the aluminum shells is recommended by means of vacuum melting.

Outlaw, R. A.