Engineering topics
Publications and source records attributed to Miyahira, T. F..
Electrical characteristics of Hughes Liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.
Electrical characteristics of Solarex back-surface-field, 2-ohm-cm, 50-micron N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity, temperature, and irradiation.
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Electrical characteristics of textured, back surface field, 10 ohm cm, 300 micron N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity, and temperature.
A set of parametric data is presented on the Spectrolab textured, back-surface-field, back-surface-reflector solar cell which is a commercially available product.
The electrical behavior of 100 micron thick tandem junction solar cells manufactured by Texas Instruments was studied as a function of 1 MeV electron fluence, photon irradiation, and 60 C annealing. These cells are found to degrade rapidly with radiation, the most serious loss occurring in the blue end of the cell's spectral response. No photon degradation was found to occur, but the cells did anneal a small amount at 60 C.
Electrical parametric data are presented on BSF, BSR, textured 10 ohm cm, 50 micron advanced OAST cells in graphical and tabular form as functions of solar illumination intensity, temperature, and 1 MeV electron fluence.
Electrical characteristics of Spectrolab HEWAC BSF, textured, 10 ohm cm, 225 micron solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.
Computed statistical averages and standard deviations with respect to the measured cells for each intensity temperature measurement condition are presented. Display averages and standard deviations of the cell characteristics in a two dimensional array format are shown: one dimension representing incoming light intensity, and another, the cell temperature. Programs for calculating the temperature coefficients of the pertinent cell electrical parameters are presented, and postirradiation data are summarized.
Electrical characteristics of Solarex 50 micron-thick N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.
A number of modern solar cell types representing 1976 technology (as well as some older types) were irradiated with 1 MeV electrons (and a limited number with 2 MeV electrons and 10 MeV protons). After irradiation, the cells were annealed, with I-V curves measured under AMO at 30 C. The purpose was to provide data to be incorporated in the revision of the solar cell radiation handbook. Cell resistivities ranged from 2 to 20 ohm-cm, and cell thickness from 0.05 to 0.46 mm. Cell types examined were conventional, shallow junction, back surface field (BSF), textured, and textured with BSF.