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Miyahira, T. F.

Publications and source records attributed to Miyahira, T. F..

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Radiation Degradation Mechanisms in Laser Diodes

Degradation mechanisms are investigated for laser diodes fabricated with different materials and wavelengths between 660 and 1550 nm. A new approach is developed that evaluates degradation below the laser threshold to determine the radiation-induced recombination density. This allows mechanisms at high injection, such as Auger recombination, to be separated from low-injection damage. New results show that AlGaInP lasers in the visible region are nearly an order of magnitude more resistant to radiation than devices fabricated with AlGaAs or AlGaAsP at longer wavelengths.

laser degradation↗
NASA NTRS2003

Displacement damage characterization of laser diodes

Displacement damage effects from protons and neutrons are compared. Differences in the annealing properties were observed which are due to the different microscopic structure of the damaged regions from the two ty pes of particles.

Miyahira, T. F.↗
NASA NTRS2002

Latent damage in CMOS devices from single-event latchup

Latent damage effects from single-event latchup are studied, revealing a previously unconsidered reliability hazard for CMOS devices. Several device types were found to remain functional despite significant structural damage to their interconnects from SEL.

single-event↗
NASA NTRS2002

Single-event transients in high-speed comparators

Single-event transients are produced in linearintegrated circuits when they are exposed to heavy ions or protons, and those transients can be a significant problem for electronic circuits in spacecraft.

space↗
NASA NTRS2002

Low dose failures of hardened DC-DC power converters

Box-level total dose testing of the FOG (Fiber Optic Gyro) by IXSEA at ESA's GammabeamFacility were abruptly terminated at 8krad (Si) due to catastrophic failure (complete shutdown). This was unexpected because all components within the gyro were supposedly radiation tolerant. Further testing showed that the components responsible for the failure were two DC-DC converters, manufactured by Interpoint, that stopped regulating shortly before shutdown. This paper summarizes diagnostic test results for the converters to determine the underlying cause of the unexpected failure at low levels of radiation.

Interpoint Rad-hard DC-DC power converter TC4426 M↗
NASA NTRS1998

Device SEE Susceptibility Update: 1996-1998

This eighth Compendium continues the previous work of Nichols, et al, on single event effects (SEE) first published in 1985. Because the compendium has grown so voluminous, this update only presents data not publised in previous compendia.

Coss, J. R.↗
NASA NTRS1982

Simulated space flight testing of commercial terrestrial silicon cells

Low cost silicon solar cells manufactured for the terrestrial market are examined for possible space flight use. The results of preliminary space environmental testing are reported and discussed. In addition, a number of possible obstacles to the use of these cells is examined. It is concluded that the terrestrial industry could provide an extremely low cost and reliable cell for space use.

Stella, P. M.↗
NASA NTRS1982

An alternate approach for low cost space cells

Silicon solar cells manufactured for the terrestrial market are examined as a potential low cost option for low earth orbit (LEO) space flight use. The results of simulated space environmental testing of representative samples are reported and discussed. It is shown that although the terrestrial cells are compatible with most space use requirements significant deficiencies still exist. Cell modifications are discussed which would enhance the space applicability of the various cells examined. In most cases these are expected to be of minimal cost impact. Concern for contact/interconnector designs capable of surviving 30,000 thermal cycles (corresponding to five years in LEO) however, needs to be resolved for the large area terrestrial devices.

Stella, P. M.↗
NASA NTRS1981

Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

Anspaugh, B. E.↗