Engineering topics
Publications and source records attributed to Liu, J. K..
We demonstrate that SiO(sub 2) cap annealing in the ultra-thin p-type InGaAs/InP quantum wells can be used to produce large blue shifts of the band edge. A substantial bandgap blue shift, as much a 292.5 meV at 900 degrees C have been measured and the value of the bandgap shift can be controlled by the anneal time.
The performcance of this QWIP camera is reported including indoor and outdoor imaging.
One of the simplest device realizations of the classic particle-in-the-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP). In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128x128 QWIP focal plane array camera, hand-held and palmsize 256x256 long-wavelength QWIP cameras and 648x480 long-wavelength cameras, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.
We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.
High performance long-wavelength GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors for low background applications have been demonstrated. This is the first theoretical analysis of quantum well infrared photodetectors for low background applications and the detectivity D* of 6 x 10(exp 13) cm.square root of Hz/W has been achieved at T = 40 K with 2 x 10(exp 9) photons/cm2/sec background. In addition, this paper describes the demonstration of mid-wavelength/long-wavelength dualband quantum well infrared photodetectors and long-wavelength/very long-wavelength dualband quantum well infrared photodetectors in 4-26 micrometers wavelength region.
In recent years, many research groups in the world have demonstrated large format Quantum Well Infrared Photodetector (QWIP) focal plane arrays for various thermal imaging applications. QWIPs as opposed to conventional low bandgap infrared detectors, are limited by thermionic dark current and not tunneling currents down to 30K or less. As a result the performance of QWIPs can be substantially improved (orders of magnitude) by cooling from 70K to 30K. Cooling does not induce any nonuniformity or 1/f noise in QWIP focal plane arrays. In this paper, we discuss the development of highly uniform long- wavelength QWIPs for astronomical applications.
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It is customary to make infrared (IR) detectors in the long wavelength range by utilizing the interband transition which promotes an electron across the band gap (Eg) from the valence band to the conduction.
In this paper, we discuss the performance of this portable long-wavelength infrared camera in quantum efficiency, NEAT, minimum resolvable temperature differnce (MRTD), uniformity, etc. and its application in science, medicine and defense.
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In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NE(delta)T, uniformity, and operability.
Quantum Well Infrared Photodetectors do not respond to normal incident light due to the Quantum mechanical selection rules associated with intersubband transitions.
In this paper, we discuss the development of this very sensitive long waelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NEAT, uniformity, and operability.
Long wavelength infrared (LWIR) detectors, 8 (micro)m to 12 (micro)m, are of great interest for a variety of ground-based and space-borne applications. These applications have placed stringent requirements on the performance of the infrared detectors and arrays including high detectivity, low dark current, uniformity, radiation hardness, and low power dissipation. I will discuss the development and progress of GaAs based long-wavelength quantum well infrared photodetectors (QWIPs) to meet those stringent requirements and the demonstration of a 9 (micro)m cutoff 640x480 QUIP focal plane array camera. The noise equivalent temperature difference of the focal plane array is 25 mK at 300 K background and the operating temperature is 70 K.
A 9 (micro)m 256x256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NE(gamma)) of 26 mK has been achieved. In this presentation, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array, its performance in quantum efficience, NA(gamma), minimum resolvable temperature (MRTD), uniformity, operability, and its applications.
In this paper, we discuss the performance of this portable long-wavelength infrared camera in quantum efficiency, NEAT, minimum resolvabel temparature difference (MRTD), uniformity, etc. and its applications in science, medicine and defense.
A hand-held quantum well infrared photodetector camera has been demonstrated.