Large format, broadband and multi-color GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane arrays
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Engineering topics
Publications and source records attributed to Liu, J. K..
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We discuss the results of a 10-16 um large format broadband QWIP focal plane arrary.
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This paper describes the first demonstation of broadband QWIP focal plane array.
In this presentation, we will discuss the development of this large format broadband infrared FPA based on a GaAs/AlGaAs materials system and its performance in quantum efficiency, noise equivalent differential temperature, uniformity, and operability.
In this presentation, we will discuss the development of this large format broadband infrared FPA based on a GaAs/AlGaAs materials system and its performance in quantum efficiency, uniformity, and operability.
The quantum well infrared photodetector is an artificially engineered semiconductor multilayer structure designed to absorb and detect infrared radiation.
QWIPs operate by photoexcitation of electrons between ground and first excited state subbands of multi-quantum wells (MQWs) which are artificially fabricated by placing thin layers of two dfferent, high-bandgap semiconductor materials alternately. The bandgap discontinuity of two materials creates quantized subbands in the potential wells associated with conduction bands.
An optimized long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE). This wafer was processed into several 640x486 format monolithically integrated 8-9 and 14-15 micron two color (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640x486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into a liquid helium cooled dewar to perform electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micron detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature, at 300 K background with f/2 cold stop. The 14-15 micron detectors of the FPA have reached BLIP at 40 K operating temperature at the same background conditions. In this presentation we discuss the performance of this long-wavelength dualband QWIP FPA in quantum efficiency, detectivity, noise equivalent temperature difference (NEAT), uniformity, and operability.
In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128x128 QWIP focal plane array camera, hand-held and palmsize 256x256 long wavelength QWIP cameras and 648x480 long-wavelength camera, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.
Long wavelength Quantum Well Infrared Photodetector (QWIP) cameras developed at the Jet Propulsion Laboratory demonstrate the potential of GaAs/A1xGa1-xAs QWIP technology for highly sensitive, low power, low cost, and highly uniform large format FPA imaging systems.
NASA, commercial, medical, and defense applications such as Earth observation systems, astronomy, weather monitoring, thermal mapping, thermography, missile tracking, and night vision aids, etc. require high performance large format long wavelength infrared (LWIR) detector arrays in the range of 8-16 µm.
In this paper, we discuss the development of highly uniform longwavelength QWIPs for astronomical applications.
A broad-band infrared detector, sensitive over a 10 - 16 mu m spectral range, based on GaAs/A1xGa1-xAs quantum wells grown by molecular beam epitaxy, has been demonstrated.
In this paper we discuss the optimization of the detector design, material growth and processing that has culminated in realization of 15 micron cutoff 128 x 128 QWIP focal plane array camera, hand-held and palmize 256 x 256 long-wavelength QWIP cameras and 648 x 480 long-wavelength cameras, holding forth great promise for myriad applications in 6-25 micron wavelength range in science, medicine, defense and industry.
High performance long-wavelength GaAs/AlxGa1-xAs quantum well infrared photodetectors for low background applications have been demonstrated.
In this paper, we discuss the development of very sensitive long wavelength infrared GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs) based on bound-to-quasibound intersubband transition, fabrication of light coupling schemes for efficient light coupling, and demonstration of several long wavelength infrared cameras based on QWIP focal plane arrays.