Engineering topics
Publications and source records attributed to Lauenstein, Jean-Marie.
An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.
Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.
We present destructive single-event effects characterization of a variety of silicon Schottky diodes from different manufacturers. We also discuss suitable derating guidelines.
Mission Statement: The NASA Electronic Parts and Packaging (NEPP) Program provides NASA's leadership for developing and maintaining guidance for the screening, qualification, test. and usage of EEE parts by NASA as well as in collaboration with other government Agencies and industry. NASA Space Technology Mission Directorate (STMD) "STMD rapidly develops, demonstrates, and infuses revolutionary, high-payoff technologies through transparent, collaborative partnerships, expanding the boundaries of the aerospace enterprise." Mission Statement: The Space Environments Testing Management Office (SETMO) will identify, prioritize, and manage a select suite of Agency key capabilities/assets that are deemed to be essential to the future needs of NASA or the nation, including some capabilities that lack an adequate business base over the budget horizon. NESC mission is to perform value-added independent testing, analysis, and assessments of NASA's high-risk projects to ensure safety and mission success. NASA Space Environments and Avionics Fellows as well as Radiation and EEE Parts Community of Practice (CoP) leads.
Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.
The performance of electronic devices in a space radiation environment is often limited by susceptibility to single-event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Interpreting the results of SEE, TID, and DD testing of complex devices is quite difficult given the rapidly changing nature of both technology and the related radiation issues. Radiation testing is performed to establish the sensitivities of candidate spacecraft electronics to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transients (SETs), TID, and DD effects. Knowing where to search for these test results is a valuable resource for the aerospace engineer or spacecraft design engineer. This poster is intended to be a resource tool for finding radiation test data.
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.
Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
We present the results of single event effect (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. This presentation will provide an overview of some of the key proposed updates to the document.
Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.
Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.
A concept of a modular and scalable 10kW to 80kW High Temperature Boost (HTB) Power Processing Unit (PPU) capable of operating at temperatures beyond the standard military temperature range was proposed for solar electric in-space propulsion. Within the PPU, the Anode Power Supply (APS) module is a 10kW modular power stage and is the key to the HTB PPU. This paper is to present the design, development, fabrication, testing and thermal demonstration of the 10kW HTB APS. The system architecture and the paradigm shift of the HTB PPU is also to be described. In addition, the extreme environments electronic and packaging technologies are addressed as the fundamental technology path. The HTB PPU is intended for power processing in the area of space solar electric propulsion, where reduction of in-space mass and volume are desired, and sometimes even critical, to achieve the goals of future space flight missions. The concept of the HTB PPU can also be applied to other extreme environment applications, such as geothermal and petroleum deep-well drilling, where higher temperature operation is required.
The dependence of single-event failures in Schottky diodes on reverse voltage derating is discussed. Failure location and possible mechanisms are also discussed.
Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.