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Ladany, I.

Publications and source records attributed to Ladany, I..

29 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes

Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease

Kressel, H.↗
NASA NTRS1977

The influence of stripe width on the threshold current of double-heterojunction lasers

Experimental measurements of the threshold current of oxide-isolated stripe laser as a function of stripe width and p-layer resistivity are presented. A calculation of the influence of carrier outdiffusion has been made, including the effect of current leakage beyond the stripe edges. The calculated threshold increase is in substantial agreement with experiment for stripe widths down to about 10 microns. The data also yield an effective diffusion length of about 7 microns for the lasers studied. Deviations between experimental and calculated thresholds occurring at stripe widths of 4-6 microns are represented by an empirical curve which is compared with previously published calculations of threshold gain.

Ladany, I.↗
NASA NTRS1977

Room-temperature-operation visible-emission semiconductor diode lasers

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported.

Ladany, I.↗
NASA NTRS1977

Al2O3 half-wave films for long-life CW lasers

Long-term operating-life data are reported for (AlGa)As CW laser diodes. The use of half-wave Al2O3 facet coatings is shown to eliminate facet erosion, allowing stable diode operation at constant current for periods in excess of 10,000 h.

Ladany, I.↗
NASA NTRS1975

Semiconductor diode laser material and devices with emission in visible region of the spectrum

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Ladany, I.↗
NASA NTRS1975

Internal optical losses in very thin CW heterojunction laser diodes

Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.

Butler, J. K.↗
NASA NTRS1974

A facsimile system using room-temperature injection-laser scanning

This paper reports the first use of CW room-temperature injection lasers in a scanning facsimile system. The document reader can resolve about 2000 spots in each horizontal line of its raster scan, which is close to the performance attained using an He-Ne gas laser. The results obtained thus suggest that these small, efficient lasers can replace gas lasers in many applications.

Goedertier, P. V.↗
NASA NTRS1972

Improving the efficiency of GaP LED's which emit green light

A study of techniques for preparing n-type material and junctions which yield the most consistent high diode efficiency values high lighted the role that Ga vacancies and/or associated defects play in reducing the green luminescent efficiency of n-type GaP. A useful method for obtaining good quality material was developed. It is shown that junction formation at high temperatures in a process where the n to p transition occurs without removing the substrate from the furnace yields devices superior to those obtained by diffusion or double epitaxy in the conventional manner previously used for GaP junction formation.

Ladany, I.↗