Engineering topics
Publications and source records attributed to Katz, Joseph.
Proposed new class of two-dimensional spatial light modulators (SLM's) based on fabrication of multi-quantum-well (MQW) structures (e.g. of AlGaAs and InGaAs) on silicon substrates. Concept makes two-dimensional SLM arrays by taking advantage of mature technology of silicon charge-coupled devices (CCD's). Features include short response times, high resolution, and low switching energies.
Active or "smart" electro-optical shutters proposed for protection of photodetectors, imaging devices, and other sensitive optical or optoelectronic elements. Responds rapidly and automatically to increase in illumination above prescribed level.
A variety of practical fluid dynamic problems related to the low-speed, high Reynolds number flow over aircraft and ground vehicles fall in a category where some simplified mathematical models become applicable. This provides the fluid dynamicists with a more economical computational tool, compared to the alternative solution of the Navier Stokes equations. The objective was to provide a brief survey of some of the viscous boundary layer solution methods and to propose a method for coupling between the inviscid outer flow and the viscous boundary layer solutions. Results of this survey and details of the viscous/inviscid flow coupling efforts are presented.
Spacing of visible interference pattern determines frequency of infrared radiation. Variable photoconductivity grating formed by interference of two visible laser beams intersecting on surface of proposed AlGaAs device substituted for fixed metal grating. Proposed device provides higher output-power density and greater tunability.
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Proposed optoelectronic integrated-circuit device serves as "universal" or standard interface for transmission and reception of digital and analog signals in communication, data-processing, and control systems. Eliminates need for custom design of interface circuitry in sense that it embodies "master-chip" design easily adaptable to use with specific equipment. Includes directly modulated semiconductor laser to generate light signals for transmission along optical fiber; positive/intrinsic/negative, avalanche, or other photodiode to detect light signals received along another optical fiber;and driving, synchronizing, preamplifying, and signal-regenerating circuitry. Muliplexes electronic signals before transmission and/or demultiplexes electronic signals after reception.
Wind-tunnel wall interference effects were estimated using numerical solutions capable of computing the flow field over complex three-dimensional bodies. This approach was then tested by applying it to two typical wind tunnel experiments involving a high-lift wing and a fighter airplane model. In both cases, the static pressure signature along the test section walls was measured and computed for additional validation. The wind-tunnel wall correction method described here, which inherently includes effects of lift and blockage, provides more details than previous semiempirical methods.
Experimental investigation of small aspect ratio rectangular wings mounted on a free-to-roll sting balance indicated that self-induced roll oscillations are possible when the aspect ratio of such wings is less than 0.5. The oscillations are probably driven by the periodic changes in the location and strength of the side edge vortices, as it has been shown for the 'wing rock' motion of delta wings, where similar changes in the leading edge vortex strength and position cause the roll oscillations. During the roll oscillation cycle the roll angle, normal force, and the side force were recorded and presented for three wings with aspect ratios of 0.25, 0.35, and 0.47. This data indicates that the lift loss during roll oscillations of rectangular wings is less than what was measured for similar delta wings. Also, the flow field of such slender rectangular wings at high angles of attack is more complicated due to the additional leading edge vortex, when compared with the flow field over slender delta wings.
Tunable far infrared radiation is produced from two-dimensional plasmons in a heterostructure, which provides large inversion-layer electron densities at the heterointerface, without the need for a metallic grating to couple out the radiation. Instead, a light interference pattern is produced on the planar surface of the heterostructure using two coherent laser beams of a wavelength selected to be strongly absorbed by the heterostructure in order to penetrate through the inversion layer. The wavelength of the far infrared radiation coupled out can then be readily tuned by varying the angle between the coherent beams, or varying the wavelength of the two interfering coherent beams, thus varying the periodicity of the photoconductivity grating to vary the wavelength of the far infrared radiation being coupled out.
A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.
Planar oxide-maskless growth of GaAs was demonstrated by transient-mode liquid phase epitaxy (TMLPE) on GaAs-coated Si substrates that were prepared by migration-enhanced molecular beam epitaxy (MEMBE). In TMLPE, the cool substrate was brought into contact with hot melts for a short time. A GaAs layer as thick as 30 microns was grown in 10 sec. The etch pits observed in TMLPE-grown layers became longer in one direction and decreased in density with increasing the TMLPE epilayer thickness. The density of etch pits in a 20 micron-thick layer was approximately 5 x 10 the 6th/sq cm. Strong bandgap emission elliptically polarized with a major axis perpendicular to the surface was observed at about 910 nm, while deep-level emission from the TMLPE/MEMBE GaAs interface was detected at 980 nm. The photoluminescence intensity divided by the carrier concentration of the TMLPE-grown layer was about 270 times larger than that of the MEMBE-grown layer used as a substrate.
The threshold current and quantum efficiency are calculated for an FIR injection laser based on intersubband transitions in GaAs single quantum wells. By considering the balance of gain against the free carrier and transverse optical phonon absorption, and the intersubband transition time, the wavelength dependence of the threshold current is calculated. For the wavelength range 50-120 microns, the required threshold currents are the lowest and have reasonable values of 1-10 kA/sq cm. The threshold quantum efficiency in that range is expected to be about 0.0001.
It is presently demonstrated that highly cambered, low aspect ratio airfoil configurations can be neither experimentally nor numerically developed on the basis of two-dimensional methods; the strong dependency of airfoil shape on aspect ratio requires the definition of a planform to be conducted first, in order to serve as input for three-dimensional optimization methods. It is found that even the simplified three-dimensional computational method presently employed can accelerate a multielement-airfoil wing development.
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Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.
Paper reviews methods of increasing and combining outputs of semiconductor lasers, with references to literature of recent years (mostly 1986 and 1987). This is a field of great practical importance: Necessary to increase or combine outputs of individual lasers to obtain sufficient power for such uses as communication, ranging, remote sensing, printing, and pumping solid-state lasers.
Double heterostructures of InGaAsSb/AlGaAsSb quaternary alloys on (100) GaSb substrates were grown by the liquid phase epitaxy (LPE) technique. Room temperature operation near 2.1 micron wavelength has been achieved under pulsed conditions with pulsed threshold current density of 7kA/sq cm.
Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.