Permanent and transient effects are discussed that are induced in linear integrated circuits by space radiation. Recent developments include enhanced damage at low dose rate, increased damage from protons due to displacement effects, and transients in digital comparators that can cause circuit malfunctions.

space radiation total dose single event upset↗

NASA NTRS1999

Proton Damage in Linear and Digital Optocouplers

This paper discusses proton degradation of linear and digital optocouplers. One obvious way to harden optocoupler technologies is to select LEDs that are more resistant to displacement damage.

optocoupler↗

NASA NTRS1999

Proton Degradation of Light-Emitting Diodes

The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers.

photonics proton degradation light-emitting diodes↗

NASA NTRS1999

Displacement Damage in Bipolar Linear Integrated Circuits

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost.

Bipolar↗

NASA NTRS1999

Angular and Energy Dependence of Proton Upset in Optocouplers

Proton upset effects in optocouplers were reported by LaBel, et al. that showed an unexpected increase in cross section for incident angles above 80 degrees.

proton↗

NASA NTRS1999

Radiation Hardness Assurance Issues Associated with COTS in JPL Flight Systems: The Challenge of Europa

With the decreasing availability of radiation hardened electronics and the new NASA paradigm of faster, more aggressive and less expensive space missions, there has been an increasing emphasis on using high performance commercial microelectronic parts and circuits in NASA spacecraft.

Europa radiation effects microelectronics↗

NASA NTRS1999

Space Radiation Effects and Hardness Assurance for Linear Integrated Circuits

New effects that complicate the application of linear devices in space are discussed, including enhanced damage at low dose rate and proton damage, which cause permanent degradtion.

radiation↗

NASA NTRS1998

The Effects of Space Radiation on Optocouplers

Space radiation effects on optocouplers are discussed, including permanent degradation from protons and electrons, and short-duration transients from protons and heavy ions.

Space radiation Optocouplers LED Proton power conv↗

NASA NTRS1998

Breakdown of Gate Oxides During Irradiation With Breakdown of Heavy Ions

Breakdown of gate oxides from heavy ions is investigated.

Ions Gate OxidesIrradiation Breakdown effects DRAM↗

NASA NTRS1998

Proton Damage Effects in Linear Integrated Circuts

Proton testing of linear circuits has identified devices where significantly more damage occurs at equivalent total dose levels with protons than tests with gamma rays.

lateral pnp transistors proton damage effects line↗

NASA NTRS1998

Total Ionizing Dose Effects on Voltage-to-Frequency Converters

This paper discusses total dose effects on voltage-to-frequency converters which impose different requirements on internal circuitry, and are also very high-precision devices (for example, linearity is typically specified between 0.002 and 0.05%).

low dose rate (LDR) Voltage-to-Frequency Converter↗

NASA NTRS1998

Comparison of Total Dose Effects on Micropower Op-Amps: Bipolar and CMOS

This paper compares low-paper op-amps, OPA241 (bipolar) and OPA336 (CMOS), from Burr-Brown, MAX473 (bipolar) and MAX409 (CMOS), characterizing their total dose response with a single 2.7V power supply voltage.

Micropower op-amps bipolar CMOS Total Dose Effects↗

NASA NTRS1998

Total Ionizing Dose Effects in Flash Memories

This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies.

NOR NAND flash memory structures degradation charg↗