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Engineering topics

Jesse, Stephen

Publications and source records attributed to Jesse, Stephen.

At least 91 records · Page 5

Strain–Chemical Gradient and Polarization in Metal Halide Perovskites

Metal halide perovskites (MHPs) have attracted broad research interest due to their outstanding optoelectronic performance. This performance has been attributed in part to the presence of polarization in these materials. However, the precise effects of chemical environment and strain condition on the polar states in MHPs have largely been missing. Herein it is revealed for the first time that chemical gradient is directly coupled with strain gradient in CH 3 NH 3 PbI 3 . This strain–chemical gradient induces an electric polarization that can potentially affect charge carrier dynamics. Furthermore, it is unveiled that this electric polarization—unlike ferroelectricity that only exists in noncentrosymmetric materials—can be present in both tetragonal and cubic phases of CH 3 NH 3 PbI 3 . This suggests that the strain–chemical gradient induced polarization is a more convincing explanation of the outstanding photovoltaic properties of MHPs than the hotly debated ferroelectric polarization. Finally, a mechanism of how this polarization impacts photovoltaic action is proposed, which offers insightful advances in the development of MHPs.

36 MATERIALS SCIENCE↗

Atomic Mechanisms for the Si Atom Dynamics in Graphene: Chemical Transformations at the Edge and in the Bulk

The dynamic behavior of e-beam irradiated Si atoms in the bulk and at the edges of single-layer graphene is examined using scanning transmission electron microscopy (STEM). A deep learning network is used to convert experimental STEM movies into coordinates of individual Si and carbon atoms. A Gaussian mixture model is further used to establish the elementary atomic configurations of the Si atoms, defining the bonding geometries and chemical species and accounting for the discrete rotational symmetry of the host lattice. The frequencies and Markov transition probabilities between these states are determined. This analysis enables insight into the defect populations and chemical transformation networks from the atomically resolved STEM data. Here, a clear tendency is observed for the formation of a 1D Si crystal along zigzag direction of graphene edges and for the Si impurity coupling to topological defects in bulk graphene.

36 MATERIALS SCIENCE↗

Tunable quadruple-well ferroelectric van der Waals crystals

The family of layered thio- and seleno-phosphates has gained attention as potential control dielectrics for the rapidly growing family of two-dimensional and quasi-two-dimensional electronic materials. Here we report a combination of density functional theory calculations, quantum molecular dynamics simulations and variable-temperature, -pressure and -bias piezoresponse force microscopy data to predict and verify the existence of an unusual ferroelectric property—a uniaxial quadruple potential well for Cu displacements—enabled by the van der Waals gap in copper indium thiophosphate (CuInP 2 S 6 ). The calculated potential energy landscape for Cu displacements is strongly influenced by strain, accounting for the origin of the negative piezoelectric coefficient and rendering CuInP 2 S 6 a rare example of a uniaxial multi-well ferroelectric. Experimental data verify the coexistence of four polarization states and explore the temperature-, pressure- and bias-dependent piezoelectric and ferroelectric properties, which are supported by bias-dependent molecular dynamics simulations. As a result, these phenomena offer new opportunities for both fundamental studies and applications in data storage and electronics.

36 MATERIALS SCIENCE↗

Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns

A helium gas field ion source has been demonstrated to be capable of realizing higher milling resolution relative to liquid gallium ion sources. One drawback, however, is that the helium ion mass is prohibitively low for reasonable sputtering rates of bulk materials, requiring a dosage that may lead to significant subsurface damage. Manipulation of suspended graphene is, therefore, a logical application for He+ milling. We demonstrate that competitive ion beam-induced deposition from residual carbonaceous contamination can be thermally mitigated via a pulsed laser-assisted He+ milling. By optimizing pulsed laser power density, frequency, and pulse width, we reduce the carbonaceous byproducts and mill graphene gaps down to sub 10 nm in highly complex kiragami patterns.

36 MATERIALS SCIENCE↗

Building and exploring libraries of atomic defects in graphene: Scanning transmission electron and scanning tunneling microscopy study

The presence and configurations of defects are primary components determining materials functionality. Their population and distribution are often nonergodic and dependent on synthesis history, and therefore rarely amenable to direct theoretical prediction. Here, dynamic electron beam–induced transformations in Si deposited on a graphene monolayer are used to create libraries of possible Si and carbon vacancy defects. Deep learning networks are developed for automated image analysis and recognition of the defects, creating a library of (meta) stable defect configurations. Density functional theory is used to estimate atomically resolved scanning tunneling microscopy (STM) signatures of the classified defects from the created library, allowing identification of several defect types across imaging platforms. This approach allows automatic creation of defect libraries in solids, exploring the metastable configurations always present in real materials, and correlative studies with other atomically resolved techniques, providing comprehensive insight into defect functionalities.

36 MATERIALS SCIENCE↗

A self-driving microscope and the Atomic Forge

The electron microscope predates the transistor and the charge-coupled device (CCD). The opportunity to integrate these advancements into the electron microscope was seized and revolutionized in the modern (scanning) transmission electron microscope (STEM). Real-time analysis became possible and is now routine. Consider the efforts one would have to undertake to perform a Fourier transform in the days when images were acquired by exposing photographic plates. Indeed, it was real-time data analysis that enabled the measurement and correction of aberrations in modern instrumentation.1 What are the next opportunities on the horizon for the STEM?

36 MATERIALS SCIENCE↗

Light-Ferroic Interaction in Hybrid Organic–Inorganic Perovskites

Given the remarkable performance of hybrid organic–inorganic perovskites (HOIPs) in solar cells, light emitters, and photodetectors, the quest to advance the fundamental understanding of the photophysical properties in this class of materials remains highly relevant. Recently, the discovery of ferroic twin domains in HOIPs has renewed the debate of the ferroic effects on optoelectric processes. This work explores the interaction between light and ferroic twin domains in CH 3 NH 3 PbI 3 . Due to strain and chemical inhomogeneities, photogenerated electrons and holes show a preferential motion in the ferroelastic twin domains. Density functional theory (DFT) shows that electrons and holes result in lattice expansion in CH 3 NH 3 PbI 3 differently. Hence, light generates strain in the ferroelastic domains due to preferential photocarrier motion, leading to a screening of strain variation. X-ray diffraction studies verify the DFT simulations and reveal that the photoinduced strain is light intensity dependent, and the photoexcitation is a prerequisite of inducing strain by light. This work extends the fundamental understanding of light-ferroic interaction and offers guidance for developing functional devices.

36 MATERIALS SCIENCE↗

Reply to: On the ferroelectricity of CH 3 NH 3 PbI 3 perovskites

First, we thank Schulz et al. 1 for their response to our Article 2 . Schulz et al. raise a few concerns regarding the piezoresponse force microscopy (PFM) measurements and their interpretation, as well as the crystal orientation, which they claim brings into question our central conclusions. Accordingly, Schulz et al. conclude that ferroelectricity is responsible for the origin of the PFM signal. However, we do not agree with this conclusion as there is no measurable electromechanical contrast above 1 pm V -1 and there are strong mechanical and chemical variations inside the twin domains that, in our opinion, are behind the measured PFM signal.

36 MATERIALS SCIENCE↗

Few-cycle Regime Atomic Force Microscopy

Abstract Traditionally, dynamic atomic force microscopy (AFM) techniques are based on the analysis of the quasi-steady state response of the cantilever deflection in terms of Fourier analysis. Here we describe a technique that instead exploits the often disregarded transient response of the cantilever through a relatively modern mathematical tool, which has caused important developments in several scientific fields but that is still quite unknown in the AFM context: the wavelet analysis. This tool allows us to localize the time-varying spectral composition of the initial oscillations of the cantilever deflection when an impulsive excitation is given (as in the band excitation method), a mode that we call the few-cycle regime . We show that this regime encodes very meaningful information about the tip-sample interaction in a unique and extremely sensitive manner. We exploit this high sensitivity to gain detailed insight into multiple physical parameters that perturb the dynamics of the AFM probe, such as the tip radius, Hamaker constant, sample’s elastic modulus and height of an adsorbed water layer. We validate these findings with experimental evidence and computational simulations and show a feasible path towards the simultaneous retrieval of multiple physical parameters.

42 ENGINEERING↗

Bulk nanofabrication with single atomic plane precision via atomic-level sculpting of crystalline oxides

A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

36 MATERIALS SCIENCE↗

Structure retrieval from four-dimensional scanning transmission electron microscopy: Statistical analysis of potential pitfalls in high-dimensional data

Four-dimensional (4D) scanning transmission electron microscopy is one of the most rapidly growing modes of electron microscopy imaging. The advent of fast pixelated cameras and the associated data infrastructure have greatly accelerated this process. Yet conversion of the 4D datasets into physically meaningful structure images in real space remains an open issue. In this work, we demonstrate that it is possible to systematically create filters that will affect the apparent resolution or even qualitative features of the real-space structure image, reconstructing artificially generated patterns. As initial efforts, we explore statistical model selection algorithms, aiming for robustness and reliability of estimated filters. This statistical model selection analysis demonstrates the need for regularization and cross validation of inversion methods to robustly recover structure from high-dimensional diffraction datasets.

36 MATERIALS SCIENCE↗

Atom-by-atom fabrication with electron beams

Assembling matter atom-by-atom into functional devices is the ultimate goal of nanotechnology. The possibility of achieving this goal is intrinsically dependent on the ability to visualize matter at the atomic level, induce and control atomic-scale motion, facilitate and direct chemical reactions, and coordinate and guide fabrication processes towards desired structures atom-by-atom. In this Perspective, we summarize recent progress in chemical transformations, material alterations and atomic dynamics studies enabled by the converged, atomic-sized electron beam of an aberration-corrected scanning transmission electron microscope. We discuss how such top-down observations have led to the concept of controllable, beam-induced processes and then of bottom-up, atom-by-atom assembly via electron-beam control. Finally, the progress in this field, from electron-beam-induced material transformations to atomically precise doping and multi-atom assembly, is reviewed, as are the associated engineering, theoretical and big-data challenges.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Application of pan-sharpening algorithm for correlative multimodal imaging using AFM-IR

The coupling of atomic force microscopy with infrared spectroscopy (AFM-IR) offers the unique capability to characterize the local chemical and physical makeup of a broad variety of materials with nanoscale resolution. However, in order to fully utilize the measurement capability of AFM-IR, a three-dimensional dataset (2D map with a spectroscopic dimension) needs to be acquired, which is prohibitively time-consuming at the same spatial resolution of a regular AFM scan. In this paper, we provide a new approach to process spectral AFM-IR data based on a multicomponent pan-sharpening algorithm. This approach requires only a low spatial resolution spectral and a limited number of high spatial resolution single wavenumber chemical maps to generate a high spatial resolution hyperspectral image, greatly reducing data acquisition time. As a result, we are able to generate high-resolution maps of component distribution, produce chemical maps at any wavenumber available in the spectral range, and perform correlative analysis of the physical and chemical properties of the samples. We highlight our approach via imaging of plant cell walls as a model system and showcase the interplay between mechanical stiffness of the sample and its chemical composition. We believe our pan-sharpening approach can be more generally applied to different material classes to enable deeper understanding of that structure-property relationship at the nanoscale.

36 MATERIALS SCIENCE↗

Time-Resolved Electrical Scanning Probe Microscopy of Layered Perovskites Reveals Spatial Variations in Photoinduced Ionic and Electronic Carrier Motion

We study light-induced dynamics in thin films comprising Ruddlesden–Popper phases of the layered 2D perovskite (C 4 H 9 NH 3 ) 2 PbI 4 . We probe ionic and electronic carrier dynamics using two complementary scanning probe methods, time-resolved G-mode Kelvin probe force microscopy and fast free time-resolved electrostatic force microscopy, as a function of position, time, and illumination. Here, we show that the average surface photovoltage sign is dominated by the band bending at the buried perovskite–substrate interface. However, the film exhibits substantial variations in the spatial and temporal response of the photovoltage. Under illumination, the photovoltage equilibrates over hundreds of microseconds, a time scale associated with ionic motion and trapped electronic carriers. Surprisingly, we observe that the surface photovoltage of the 2D grain centers evolves more rapidly in time than at the grain boundaries. We propose that the slower evolution at grain boundaries is due to a combination of ion migration occurring between PbI 4 planes, as well as electronic carriers traversing grain boundary traps, thereby changing the time-dependent band unbending at grain boundaries. These results provide a model for the photoinduced dynamics in 2D perovskites and are a useful basis for interpreting photovoltage dynamics on hybrid 2D/3D structures.

14 SOLAR ENERGY↗

Deep learning analysis of defect and phase evolution during electron beam-induced transformations in WS2

Abstract Recent advances in scanning transmission electron microscopy (STEM) allow the real-time visualization of solid-state transformations in materials, including those induced by an electron beam and temperature, with atomic resolution. However, despite the ever-expanding capabilities for high-resolution data acquisition, the inferred information about kinetics and thermodynamics of the process, and single defect dynamics and interactions is minimal. This is due to the inherent limitations of manual ex situ analysis of the collected volumes of data. To circumvent this problem, we developed a deep-learning framework for dynamic STEM imaging that is trained to find the lattice defects and apply it for mapping solid state reactions and transformations in layered WS 2 . The trained deep-learning model allows extracting thousands of lattice defects from raw STEM data in a matter of seconds, which are then classified into different categories using unsupervised clustering methods. We further expanded our framework to extract parameters of diffusion for sulfur vacancies and analyzed transition probabilities associated with switching between different configurations of defect complexes consisting of Mo dopant and sulfur vacancy, providing insight into point-defect dynamics and reactions. This approach is universal and its application to beam-induced reactions allows mapping chemical transformation pathways in solids at the atomic level.

36 MATERIALS SCIENCE↗

Manifold learning of four-dimensional scanning transmission electron microscopy

Four-dimensional scanning transmission electron microscopy (4D-STEM) of local atomic diffraction patterns is emerging as a powerful technique for probing intricate details of atomic structure and atomic electric fields. However, efficient processing and interpretation of large volumes of data remain challenging, especially for two-dimensional or light materials because the diffraction signal recorded on the pixelated arrays is weak. Here we employ data-driven manifold leaning approaches for straightforward visualization and exploration analysis of 4D-STEM datasets, distilling real-space neighboring effects on atomically resolved deflection patterns from single-layer graphene, with single dopant atoms, as recorded on a pixelated detector. These extracted patterns relate to both individual atom sites and sublattice structures, effectively discriminating single dopant anomalies via multi-mode views. We believe manifold learning analysis will accelerate physics discoveries coupled between data-rich imaging mechanisms and materials such as ferroelectric, topological spin, and van der Waals heterostructures.

47 OTHER INSTRUMENTATION↗