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Jean-Marie Lauenstein

Publications and source records attributed to Jean-Marie Lauenstein.

30 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2020

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.

Xiaoli Sun↗
NASA NTRS2017

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy-ion-irradiated Schottky diodes. After failures have been identified, the parts were cross-sectioned to describe the structure of the failures and energy dispersive x-ray spectroscopy was used to characterize the materials in the failure structures.

Radiation effects↗
NASA NTRS2015

Schottky Diode Derating for Survivability in a Heavy Ion Environment

In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.

Radiation effects↗
NASA NTRSDate not supplied

Space Radiation Effects on SiC Power Device Reliability

Heavy-ion radiation can result in silicon carbide power device degradation and/or catastrophic failure. Test procedures and data interpretation must consider the impact that heavy-ion induced off-state leakage current increases will have on subsequent single-event effect susceptibility and testability. On orbit, reliable performance in the presence of increased off-state leakage currents due to cumulative ion-induced non-catastrophic single-event effects must be assured over the mission lifetime. This work presents a large body of heavy-ion test data for different diode, power MOSFET, and JFET devices. Susceptibility to single-event effects is compared between SiC and Si power devices. Initial recommendations on heavy-ion radiation test methods for silicon carbide power devices are made and radiation hardness assurance is discussed with the goal of moving one step closer to reliably getting this technology off the ground into a broad array of spacecraft and instruments that will benefit from its unique capabilities.

diode↗
NASA NTRSDate not supplied

NASA Goddard Space Flight Center’s Recent Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single-Event Effects (SEE)↗
NASA NTRSDate not supplied

Technology Development of a Solid State 266 nm Laser for NASA’s Dragonfly Mission

NASA’s Dragonfly mission is a rotorcraft lander which will explore several geologic locations on Saturn’s moon, Titan and investigate evidence of surface-level prebiotic chemistry as well as search for chemical signatures of water-based and/or hydrocarbon-based life. To perform molecular composition investigations in-situ, the payload includes the Dragonfly Mass Spectrometer (DraMS), being developed at NASA’s Goddard Space Flight Center (GSFC). DraMS will utilize laser desorption mass spectrometry (LDMS) to interrogate surface samples and measure the organic composition. Enabling this science capability is the Throttled Hydrocarbon Analysis by Nanosecond Optical Source (THANOS) laser being developed at NASA-GSFC. The THANOS laser is comprised of a solid state, passively Q-Switched Nd:YAG oscillator which is frequency converted to 266 nm and utilizes a RTP high voltage electro-optic for pulse energy control. The laser outputs <2.0 ns pulses with a maximum energy of approximately 200 uJ which can be emitted in 1 - 50 shot bursts at 100 Hz while performing LDMS science operations. While operating, the laser has the capability to throttle its UV pulse energy output from full attenuation to maximum energy to provide varying levels of fluence on samples in the DraMS instrument. This paper reports the technology development and space qualification effort of the THANOS laser including vibration, thermal vacuum cycling, radiation as well as Titan atmospheric composition optical damage testing performed at NASA-GSFC from 2019 through 2022.

Matthew W Mullin↗
NASA NTRSDate not supplied

Performance of the Dragonfly Mass Spectrometer (DraMS) Programmable UV Laser Source Engineering Test Unit (ETU)

NASA’s Dragonfly mission will sample surface materials from multiple sites on Saturn’s largest moon, Titan, in exploration of its potential for prebiotic chemistry. We report on the performance of our short-pulsed UV laser transmitter, developed for the Dragonfly’s on-board Mass Spectrometer (DraMS). Our engineering test unit (ETU) has completed flight qualification and demonstrated its operational science requirements, such that the final flight unit build can begin. The Titan Hydrocarbon Analysis Nanosecond Optical Source (THANOS) ETU laser produces 266 nm laser pulses at programmable energy levels in order to create high resolution laser desorption mass spectrometry (LDMS) measurements. The laser operates in short bursts of 1-50 pulses, each at < 2 ns pulse width, at a 100 Hz repetition rate. Creating a sealed Titanium unit, capable of operation on the extreme environment of Titan’s surface was a major engineering challenge. The laser successfully demonstrated its ability to meet all operational requirements in terms of pulse energy, beam pointing on target and repeatability even after extensive environmental testing.

Matthew Mullin↗
NASA NTRSDate not supplied

Displacement Damage Induced Dark Current and Random Telegraph Signal in P-Type Deep-Trench Pinned Photogates

This study focuses on displacement damage induced dark current and Random Telegraph Signal (RTS) in STMicroelectronics P-Type photogate, a device moving away from the 4T Pinned-Photodiode, with a sensitive volume exclusively made of boron-doped P-type epitaxy, and collecting holes instead of electrons. Results show a typical trend for the shape of dark current and RTS degradation in CMOS Image Sensors with the exception that the measured generation rates seem 2 times smaller than typical literature values in irradiated silicon. Different hypothesis on the origin of this discrepancy are explored.

displacement damage dose↗