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Jean-Marie Lauenstein

Publications and source records attributed to Jean-Marie Lauenstein.

At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2024

The NASA Radiation Hardness Assurance (RHA) Process Standard

This paper presents status on the upcoming NASA Agency-level RHA Process Standard. Based on recommendations provided by the NASA Engineering and Safety Center (NESC), the NASA Electronic Parts and Packaging (NEPP) Program has led development of an agency-level standard for space flight avionics and electronics RHA. The standard introduces a novel RHA taxonomy and prescribes the process required by NASA programs and projects to baseline their RHA programs consistent with the MEAL (Mission, Environment, Application, and Lifetime) criteria including the risk tolerance posture. The standard also provides requirements for the RHA schedule integration in the program or project lifecycle and requirements for data deliverables content. Additional non-prescriptive technical content is provided in the standard appendices to guide development of RHA programs for NASA missions.

Avionics↗
NASA NTRS2023

C30665L CD3740 Displacement Damage and Total Ionizing Dose Test Report

The purpose of this testing is to provide preliminary characterization of the displacement damage and total ionizing dose effects via 63 MeV protons on InGaAs PIN photodiodes fabricated and assembled by Excelitas for use in a LIDAR system. The testing is being conducted to determine the susceptibility of the component to the radiation environment that it will be exposed to during mission duration.

Landen D Ryder↗
NASA NTRS2023

Proton Test Report Micropac 66212-300 Optocoupler

The purpose of this test was to determine the displacement damage and total ionizing dose sensitivity of Micropac’s 66212 optocoupler. During the test, the device was exposed to protons. Device parameters such as CTR, reverse current, and forward voltage were investigated.

displacement damage↗
NASA NTRS2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗
NASA NTRS2022

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation

Dark Current degradation and Dark Current Ran- dom Telegraph Signal after proton irradiation are studied in new scale silicon microvolumes by using a commercial CMOS Image Sensor. Results show that previously reported empirical models describing the Displacement Damage induced degradations are still valid despite the 10 to 100 times smaller depletion volume used. In addition, no evidence of significant Total Ionizing Dose effects is observed. Finally the reduction of the fraction of Random Telegraph Signal (RTS) pixels detected and of the fraction of multi-level RTS pixels is directly linked to the reduction in pixel volume.

CMOS Image Sensor (CIS)↗
NASA NTRS2021

LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)

A better understanding of the linear energy transfer and the range of proton recoil ions in gallium nitride is necessary to properly evaluate GaN device radiation tolerance. By analyzing the linear energy transfer (LET) and range of recoil heavy ions in GaN we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know towards the effort of ensuring radiation tolerance.

gallium nitride (GaN)↗
NASA NTRS2021

Single-Event Effect Testing of the ON Semiconductor BSS123 N-Channel Logic Level Enhancement Mode FET and the Vishay Si1013R P-Channel MOSFET

This study was undertaken to determine the single event effect (SEE) susceptibility of two different MOSFET components. Heavy-ion testing was conducted at the Lawrence Berkeley National Laboratory (LBNL) Berkeley Accelerator Space Effects (BASE) Facility 88” Cyclotron. Its purpose was to evaluate these devices as candidates for use on Goddard Modular SmallSat Architecture (GMSA) adapter board for the GTOSat project.

Michael J Campola↗
NASA NTRS2020

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗
NASA NTRS2020

NASA Goddard Space Flight Center’s Compendium of Radiation Effects Test Results

Total ionizing dose, displacement damage dose, and single event effects testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include FETs, flash memory, FPGAs, optoelectronics, digital, analog, and bipolar devices.

Single Event Effects (SEE)↗