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Grunthaner, F. J.

Publications and source records attributed to Grunthaner, F. J..

83 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfaces

A simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.

Vasquez, R. P.↗
NASA NTRS1980

Precise wet-chemical etching

Controlled amount of etchant applied to surface of rotating sample removes only few angstroms of material. Technique is suited to study of chemical and crystal structures. Rate can be varied through control of spin frequency, liquid viscosity, droplet size, total etchant volume, etchant concentration.

Grunthaner, F. J.↗
NASA NTRS1979

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

Grunthaner, F. J.↗
NASA NTRS1977

Experimental observations of the chemistry of the SiO2/Si interface

Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.

Grunthaner, F. J.↗
NASA NTRS1977

Photoelectron spectrometer with means for stabilizing sample surface potential

An improved X-ray photoelectron spectrometer is disclosed, which includes circuit means to determine the surface potential of a sample, e.g., an insulator. The circuit means comprise an electron gun, whose potential is modulated at a preselected frequency above and below a selected potential with respect to the spectrometer common potential, e.g., ground. The beam of electrons is directed to the sample surface. The sample's surface potential is offset by an offset power supply with respect to the spectrometer common potential until the ac current which flows through the sample reaches a peak amplitude. A lock-in amplifier is included to measure the ac current in phase with the modulating frequency.

Grunthaner, F. J.↗
NASA NTRS1975

Soft X-ray lasers using distributed-feedback reflection: A concept

Proposed arrangement consists of large evacuated chamber containing smaller Dewar chamber into which liquid neon is introduced. Zeolite crystal is mounted in wall of chamber, with one side in contact with neon and other exposed to evacuated chamber. Electron gun is used to bombard crystal.

Grunthaner, F. J.↗
NASA NTRS1975

Sodium ions at defect sites at SiO2/Si interfaces as determined by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy (XPS) is described in its application as a probe for studying defects such as sodium in SiO2 films. A general description is given of key experimental methods in XPS. Techniques are described for applying and monitoring a fixed bias at the surface of the oxide during the XPS measurement. These methods are shown to be capable of detecting extremely small Na and Cu concentrations in undoped samples (less than 10 to the 11th power per cu cm). In deliberately Na-doped samples, five spectral peaks are distinctly observed and related to different defect states at the vacuum/SiO2 and SiO2/Si interfaces. By applying a bias-temperature stress during the XPS measurements, these peaks change in relative intensity and can be related to the motion of the Na(+) ions between different states occurring at the two interfaces. An attempt is made to correlate the observations with previously reported models.

Grunthaner, F. J.↗
NASA NTRS1975

Migratory gold resistive shorts - Chemical aspects of a failure mechanism

Integrated-circuit devices using the Ti/W/Au metal system are subject to failure mechanisms based on electrolytic corrosion. The migratory gold resistive short (MGRS) failure mode is one example of this mechanism and results in the formation of filamentary or dendritic deposits of gold between adjacent stripes on the IC chip. This reaction requires the presence of a sufficient amount of water, a bias voltage between adjacent stripes, and the activation of the cathodic (-) stripe. Gold ions are transported from anode to cathode through a film of moisture adsorbed on the surface of the chip; halide ions are probably involved in the transfer. Their presence is verified experimentally by X-ray photoelectron spectroscopy. Some of the chemical and electrostatic factors involved in the MGRS mechanism are discussed in this paper, including the questions of a threshold level of moisture and contamination.

Grunthaner, F. J.↗