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Fossum, Eric R.

Publications and source records attributed to Fossum, Eric R..

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Cosmic-Ray Detectors With Interdigitated Electrodes

Detectors measure both positions of incidence and energies of incident charged particles. Stack of detector wafers intercept cosmic ray. Measure positions of incidence to determine cosmic-ray trajectory and charge generated within them (proportional to cosmic-ray energy dissipated within them). Interdigital electrode pattern repeated over many rows and columns on tops of detector wafers in stack. Electrode pattern defines pixels within which points of incidence of incident cosmic rays located.

Cunningham, Thomas J.↗
NASA NTRS1995

Active-Pixel Image Sensor With Analog-To-Digital Converters

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Fossum, Eric R.↗
NASA NTRS1995

Monolithic Active-Pixel Infrared Sensors

Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.

Fossum, Eric R.↗
NASA NTRS1995

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1995

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗
NASA NTRS1994

Active-Pixel Cosmic-Ray Sensor

Cosmic-ray sensor comprises planar rectangular array of lateral bipolar npn floating-base transistors each of which defines pixel. Collector contacts of all transistors in each row connected to same X (column) line conductor; emitter contacts of all transistors in each column connected to same Y (row) line conductor; and current in each row and column line sensed by amplifier, output of which fed to signal-processing circuits.

Fossum, Eric R.↗
NASA NTRS1994

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1993

Rectangular Array Of Digital Processors For Planning Paths

Prototype 24 x 25 rectangular array of asynchronous parallel digital processors rapidly finds best path across two-dimensional field, which could be patch of terrain traversed by robotic or military vehicle. Implemented as single-chip very-large-scale integrated circuit. Excepting processors on edges, each processor communicates with four nearest neighbors along paths representing travel to north, south, east, and west. Each processor contains delay generator in form of 8-bit ripple counter, preset to 1 of 256 possible values. Operation begins with choice of processor representing starting point. Transmits signals to nearest neighbor processors, which retransmits to other neighboring processors, and process repeats until signals propagated across entire field.

Kemeny, Sabrina E.↗
NASA NTRS1993

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Mendis, Sunetra K.↗
NASA NTRS1993

Method for producing a hybridization of detector array and integrated circuit for readout

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

Fossum, Eric R.↗
NASA NTRS1993

A Review of Infrared Readout Electronics for Space Science Sensors

A review of infrared readout electornics for space science sensors is presented. General requirements for scientific IR FPA readout are discussed. Specific approaches to the unit cell electronics are described with respect to operation, complexity, noise and other operating parameters. Recent achievements in IR FPA readout electronics are reviewed. Implementation technologies for realization of IR FPA readout electronics are discussed. Future directions for addressing NASA and other scientific users' needs are suggested.

Infrared Readout Electonics↗
NASA NTRS1993

CMOS Active Pixel Image Sensor

A new CMOS active pixel image sensor is reported. The sensor uses a 2.0mue double-poly, double-metal foundry CMOS process and is realized as a 28 x 28 array of 40 mue x 40 mue pixels. The Sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications.

CMOS↗
NASA NTRS1993

Smart focal-plane technology for micro-instruments and micro-rovers

It is inevitable that micro-instruments and micro-rovers for space exploration will contain one or more focal-plane arrays for imaging, spectroscopy, or navigation. In this paper, we explore the state-of-the-art in focal-plane technology for visible sensors. Also discussed is present research activity in advanced focal-plane technology with particular emphasis on the development of smart sensors. The paper concludes with a discussion of possible future directions for the advancement of the technology.

Fossum, Eric R.↗
NASA NTRS1993

Noise and Electrical Characteristics below 10 K of small CHFET Circuits and Discrete Devices

This paper discusses the lates results of a continuing study of the properties of the complementary heterojunction field-effect transistor (CHFET) at 4K. The electrical characteristics, including the gate leakage current and the subthreshold transconductance, and the input-referred noise voltage for a new lot of discrete CHFETs is presented and discussed.

Complementary Heterojunction Field-effect Transist↗
NASA NTRS1993

Cosmic-ray Detector with Interdigitated-Finger Pixels for two-dimensional Position Information from a Singel Wafer Side

This paper describes a type of cosmic ray detector for isotopic and energy detection of energetic nuclei which derives both dimensions of position information from one side of the detector. This simplifies the required readout electronics, since only one precision amplifier connected to the other side is required for an accurate detection of the energy loss.

Cosmic-Ray Detector↗
NASA NTRS1993

Application of the Active Pixel Sensor Concept to Guidance and Navigation

Charge-coupled devices (CCDs) have been used extensively in the past in star trackers and fine guidance systems. A new technology, the active pixel sensor, is a possible successor to CCDs. This technology potentially features the same sensitivity and performance of the CCD with additional improvements. These improvements include random access capability, easy window-of-interest readout, non-destructive readout for signal-to-noise improvement, high radiation tolerance, simplified clocking voltages, and easy integration with other on-chip signal processing circuitry. The state-of-the-art of this emerging technology and its potential application to guidance and navigation systems is discussed.

Eisenman, Allan R.↗