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Donald, Scott B.

Publications and source records attributed to Donald, Scott B..

10 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Submicrometer spectromicroscopy of UO 2 aged under high humidity conditions

We report the oxidation of uranium dioxide is a complicated process, depending on factors including humidity, temperature, and microstructure. To further determine the characteristics of this process, UO 2 particles were allowed to age and agglomerate under 98% relative humidity at room temperature for 378 days. A focused ion beam (FIB) section of this agglomeration was then measured at the O K-edge, U N 5 -edge, and C K-edge using the scanning transmission x-ray microscope (STXM) at the Advanced Light Source. O K-edge and U N 5 -edge x-ray absorption measurements allowed for the elemental and chemical species mapping of the agglomerates and indicated the formation of schoepite at the submicrometer scale in specific locations. Non-negative matrix factorization was employed to elucidate the main components at the O K-edge, which were uranyl (schoepite) formed primarily at the interface of the sample with controlled atmosphere, a UO 2 -like bulk component present in the majority of the sample, and an oxygen species present at the surface of the FIB section, which is likely adsorbed water. STXM spectromicroscopy measurements at the U N 5 -edge measurements also confirmed the location of oxidized uranium. This analysis is a valuable insight into the formation of schoepite on UO 2 and shows the sensitivity to and utility of STXM spectromicroscopy for uranium speciation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

ICP etching of GaN microstructures in a Cl 2 –Ar plasma with subnanometer-scale sidewall surface roughness

In this work, substrate temperature, RF power, and ICP power were investigated for their effects on GaN micropillar sidewall roughness and etch characteristics. Elevated substrate temperature was shown to improve the sidewall etch morphology at low RF powers (reduced physical bombardment) and low ICP powers (lower plasma densities). Increased lateral etching is observed with both increased ICP power and substrate temperature, which both act to increase the chemical component of the etch. Etch conditions with a high chemical driving force resulted in faceting along the a-plane on the sidewalls. This faceting produced extremely smooth surfaces with root-meansquare roughness (R q ) as low as 0.20 nm which is comparable to typical epitaxy-ready surfaces and smaller than the a-plane lattice spacing of 0.3186 nm. The smooth surfaces produced in this study enable possibilities for laser facets or for new device structures that require high quality surfaces for GaN regrowth.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Morphological and chemical characteristics of oxide scales formed on δ-phase plutonium metal alloys II: 2.0 at% Ga

The focused ion-beam scanning electron microscopy (FIB-SEM) and three-dimensional (3D) microscopy were applied to characterize the subsurface morphological features of oxide scales formed on an ~2.0 at. % Ga plutonium (Pu) metal alloy. Using the FIB-SEM technique, a number of morphological features formed in the interior of the oxide scale from Pu metal’s environmental exposure were observed and identified. Auger electron spectroscopy (AES) was utilized to characterize the cross-sectional composition and chemistry of the oxide scale. The oxide scale formed during inert storage and operational environments was found to be highly variable in thickness and morphology, presenting some regions with a thin (<400 nm), dense oxide layer and others with a thick (>2 µm) scale with substantial lateral cracking. After subsequent exposure to dry air environment, the oxide scale became thicker (~4 µm) and slightly more porous. The changes following aging in a moist air environment were observed to be more severe, with the formation of a highly porous internal structure containing significant lateral and transverse cracking. In comparison to the scale formed on an ~3.5 at. % Ga-Pu metal alloy, the oxide morphology of the lower gallium alloy investigated here exhibited greater variation in thickness and a noteworthy dependence on the presence of water vapor, particularly in terms of the internal porosity formed during growth of the oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Evidence of an oxidation induced phase transformation for a delta phase plutonium-gallium alloy

The oxidation of an ~1.5 at% Ga plutonium metal alloy in dry air as a function of time was studied using a combination of FIB-SEM, AES, and XRD. Analysis of SEM images of FIB cross-sections of the oxide allowed for direct measurement of the oxide thickness as well as determination of heterogeneity in the extent of the oxide. AES analysis performed on cross-sections of the oxide allowed for quantitative analysis of the atomic composition and semi-quantitative analysis of the chemical composition. Initial preparation of the sample was found to induce a martensitic transformation to α' - Pu with an average thickness of 233 nm. Electropolishing was found to be sufficient to fully remove the α' layer with creation of only a minimum oxide layer. Growth of the oxide in dry air was found to initially follow parabolic kinetics, with a parabolic rate constant orders of magnitude higher than expected for δ-Pu but in-line with values extrapolated to room temperature for α-Pu. Following complete oxidation of the initial α` layer, further regions of plutonium metal depleted in gallium were observed to form at the oxide / metal interface. However, gallium, as Ga 2 O 3 , was found to be enriched at the surface and present in the oxide in an amount comparable to the relative Ga:Pu ratio of the bulk metal alloy. Finally, the results presented here serve to bridge a diverse array of previous experimental and theoretical data and provide the first comprehensive view of the fate of the δ-stabilizer during formation of an oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Impact of carrier wafer on etch rate, selectivity, morphology, and passivation during GaN plasma etching

The choice of carrier wafer was found to significantly influence etch rates, selectivity, and morphology in GaN micropillar etching in a Cl 2 -Ar high-density inductively coupled plasma. 7 × 7 mm 2 GaN on sapphire chips with a plasma-enhanced chemical vapor deposition SiO 2 hard mask was etched on top of 4-in. fused silica, silicon carbide, silicon, sapphire, aluminum nitride, and high purity aluminum carriers. Silicon and silicon carbide carriers reduced GaN:SiO 2 selectivity because incidental SiCl x and CCl x etch products from the carriers attack the SiO 2 mask. Aluminum nitride and high-purity aluminum carriers yielded the highest GaN:SiO 2 selectivities due to the deposition of Al-based etched by-products, while the highest GaN etch rate was achieved using the sapphire carrier since it was the most inert carrier and did not sink any Cl 2 . Overall, results indicate that SiO 2 and Al may be used as passivation materials during GaN etching, as vertical profiles were achieved when SiO 2 or Al is redeposited from the fused silica and aluminum carriers, respectively. Floor pitting, trenching, sidewall roughness, and faceting were all influenced by carrier wafer type and will be discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Parabolic oxidation kinetics of a plutonium alloy at room temperature

Auger electron spectroscopy (AES) was used to characterize the oxide scale formed on an ~0.5 wt. % Ga plutonium metal alloy. Analysis of changes to the characteristic Auger transitions for Pu and O during sputter depth profiles were used in combination with previously measured sputter yields to determine the thickness of the oxide scale and provide insight into its chemistry. From this data, the parabolic kinetics for the Pu-Ga alloy were determined as a function of relative humidity, RH = 14–92%, and oxygen partial pressure, p(O 2 ) = 31–157 Torr, at 25°C. For each relative humidity investigated, the parabolic rate constant was found to be independent of oxygen partial pressure. Furthermore, power-law fits to the relative humidity effect on the rate constant was found to have a power of n = 1.265, indicating the diffusion species which rate-limits the reaction isn’t molecular water, which subsequent dissociates at the oxide-metal interface, or hydroxyl from dissociation at the gas-surface interface.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Morphological and chemical characteristics of oxide scales formed on δ-Phase plutonium metal alloys I: 3.5 at% ga

Focused ion-beam scanning electron microscopy (FIB-SEM) and three-dimensional (3D) microscopy were applied to characterize the subsurface morphological features of oxide scales formed on an ~3.5 at.% Ga plutonium (Pu) metal alloy. Using the FIB-SEM technique, a number of morphological features formed in the interior of the oxide scale from Pu metal's environmental exposure were observed and identified. Here, Auger electron spectroscopy (AES) was utilized to characterize the cross-sectional composition and chemistry of the oxide scale. The oxide scale formed during inert storage and operational environments has a characteristic internal scale structure that includes a relatively dense oxide layer with some lateral and transverse cracking. Generally, after subsequent exposure to dry air environment, the oxide scale retained most of the original structural and chemical characteristics. However, after aging in a moist air environment, while the oxide scale was found to maintain the chemical characteristics of the source oxide, the scale was found to be on average thinner and without the previously observed internal microcracking, likely the result of spallation of the source scale during exposure to the new environment.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Variation in plutonium dioxide sputter yields for 1–5 keV Ar+ ions

An oxide layer with a known thickness and chemistry was grown on delta stabilized Pu and sputtered with 1–5 keV Ar+ ions over a range of incident ion angle between 22° and 72°. From the time required to remove the oxide layer, sputter yields of PuO2 were calculated. The sputter yields appear to increase with higher Ar+ ion beam energy in the range of 1–5 keV at an incident sputter ion angle of 42° and were found to increase with a decreasing angle of incidence up to 62°. The degree of oxide reduction induced during the sputter process was found to vary with the incident sputter ion angle.

Donald, Scott B.↗
DOE OSTI2019

Improving Microstructural Quantification in 3D FIB-SEM Tomography

A detailed understanding of 3D microstructural features is crucial during postprocessing of the acquired data, while determining microstructural properties. Focused ion beam and scanning electron microscopy (fib-sem) is an ideal technique for the acquisition and quantification of 3D microstructures in subsurface features. In this work, we evaluated and implemented approaches to quantify 3D morphological features of plutonium oxalate and oxide particles. Image analysis, as well as statistical analysis were utilized to study the effect of process variables on the pore morphology of plutonium oxalate and oxide particles. The primary results were the creation of morphological maps of particles and identify indicators that correlated parameters allowing for discrimination between direct and reverse strike processes. This enabled us to properly quantify and map particles with their images obtained via sem. For this project, the highest correlation was found to be between Volume and Sphericity (R 2 = 0.7432) for the Revere Strike process, and Volume % and Sphericity (R 2 = 0.7450) for the Direct Strike process.

36 MATERIALS SCIENCE↗