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Cunningham, Thomas J.

Publications and source records attributed to Cunningham, Thomas J..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

High-speed on-chip windowed centroiding using photodiode-based CMOS imager

A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

Pain, Bedabrata↗
NASA NTRS2003

High-speed on-chip windowed centroiding using photodiode-based CMOS imager

A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

Pain, Bedabrata↗
NASA NTRS2002

Delta-doped hybrid advanced detector for low energy particle detection

A delta-doped hybrid advanced detector (HAD) is provided which combines at least four types of technologies to create a detector for energetic particles ranging in energy from hundreds of electron volts (eV) to beyond several million eV. The detector is sensitive to photons from visible light to X-rays. The detector is highly energy-sensitive from approximately 10 keV down to hundreds of eV. The detector operates with milliwatt power dissipation, and allows non-sequential readout of the array, enabling various advanced readout schemes.

Cunningham, Thomas J.↗
NASA NTRS2000

Infrared Detector System with Controlled Thermal Conductance

A thermal infrared detector system includes a heat sink, a support member, a connection support member connecting the support member to the heat sink and including a heater unit is reviewed. An infrared detector element is mounted on the support member and a temperature signal representative of the infrared energy contacting the support member can then be derived by comparing the temperature of the support member and the heat sink. The temperature signal from a support member and a temperature signal from the connection support member can then be used to drive a heater unit mounted on the connection support member to thereby control the thermal conductance of the support member. Thus, the thermal conductance can be controlled so that it can be actively increased or decreased as desired.

Cunningham, Thomas J.↗
NASA NTRS2000

Delta-doped hybrid advanced detector for low energy particle detection

A delta-doped hybrid advanced detector (HAD) is provided which combines at least four types of technologies to create a detector for energetic particles ranging in energy from hundreds of electron volts (eV) to beyond several million eV. The detector is sensitive to photons from visible light to X-rays. The detector is highly energy-sensitive from approximately 10 keV down to hundreds of eV. The detector operates with milliwatt power dissipation, and allows non-sequential readout of the array, enabling various advanced readout schemes.

Cunningham, Thomas J.↗
NASA NTRS1995

Developing Low-Noise GaAs JFETs For Cryogenic Operation

Report discusses aspects of effort to develop low-noise, low-gate-leakage gallium arsenide-based junction field-effect transistors (JFETs) for operation at temperature of about 4 K as readout amplifiers and multiplexing devices for infrared-imaging devices. Transistors needed to replace silicon transistors, relatively noisy at 4 K. Report briefly discusses basic physical principles of JFETs and describes continuing process of optimization of designs of GaAs JFETs for cryogenic operation.

Cunningham, Thomas J.↗
NASA NTRS1995

Cosmic-Ray Detectors With Interdigitated Electrodes

Detectors measure both positions of incidence and energies of incident charged particles. Stack of detector wafers intercept cosmic ray. Measure positions of incidence to determine cosmic-ray trajectory and charge generated within them (proportional to cosmic-ray energy dissipated within them). Interdigital electrode pattern repeated over many rows and columns on tops of detector wafers in stack. Electrode pattern defines pixels within which points of incidence of incident cosmic rays located.

Cunningham, Thomas J.↗
NASA NTRS1995

Monolithic Active-Pixel Infrared Sensors

Monolithic arrays of active-pixel junction field-effect (JFET) devices made from InGaAs proposed for use as imaging sensors sensitive to light in visible and short-wavelength infrared parts of electromagnetic spectrum. Each pixel of such array comprises photodetector monolithically integrated with JFET output-amplifier circuit of source-follower type - structure similar to charge-coupled device (CCD). Sizes of instruments reduced because large cooling systems not needed.

Fossum, Eric R.↗
NASA NTRS1995

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1994

Active-Pixel Cosmic-Ray Sensor

Cosmic-ray sensor comprises planar rectangular array of lateral bipolar npn floating-base transistors each of which defines pixel. Collector contacts of all transistors in each row connected to same X (column) line conductor; emitter contacts of all transistors in each column connected to same Y (row) line conductor; and current in each row and column line sensed by amplifier, output of which fed to signal-processing circuits.

Fossum, Eric R.↗
NASA NTRS1994

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗
NASA NTRS1993

Noise and Electrical Characteristics below 10 K of small CHFET Circuits and Discrete Devices

This paper discusses the lates results of a continuing study of the properties of the complementary heterojunction field-effect transistor (CHFET) at 4K. The electrical characteristics, including the gate leakage current and the subthreshold transconductance, and the input-referred noise voltage for a new lot of discrete CHFETs is presented and discussed.

Complementary Heterojunction Field-effect Transist↗
NASA NTRS1993

Cosmic-ray Detector with Interdigitated-Finger Pixels for two-dimensional Position Information from a Singel Wafer Side

This paper describes a type of cosmic ray detector for isotopic and energy detection of energetic nuclei which derives both dimensions of position information from one side of the detector. This simplifies the required readout electronics, since only one precision amplifier connected to the other side is required for an accurate detection of the energy loss.

Cosmic-Ray Detector↗
NASA NTRS1992

An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors

The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFET's) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods reducing the gate current are discussed.

Cunningham, Thomas J.↗