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Clarke, Roy

Publications and source records attributed to Clarke, Roy.

22 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

The presence of a (1 x 1) oxygen overlayer on ZnO(0001) surfaces and at Schottky interfaces

The atomic surface and interface structures of uncoated and metal-coated epi-polished ZnO(0001) Zn-polar wafers were investigated via surface x-ray diffraction. All uncoated samples showed the presence of a fully occupied (1 x 1) overlayer of oxygen atoms located at the on-top position above the terminating Zn atom, a structure predicted to be unstable by several density functional theory calculations. The same oxygen overlayer was clearly seen at the interface of ZnO with both elemental and oxidized metal Schottky contact layers. No significant atomic relaxations were observed at surfaces and interfaces processed under typical device fabrication conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate ('nano-drilling') is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2011

Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

77 NANOSCIENCE AND NANOTECHNOLOGY↗