Engineering topics

Blouke, M. M.

Publications and source records attributed to Blouke, M. M..

10 records

NASA NTRS1992

CCDs and photon counting devices: Applications in space and from the ground

The development of the 2048 by 2048 CCD (Charge Coupled Device) for a second generation space telescope instrument has resulted in devices with very few defects, dark currents of less than 12 electrons/pixel/hour at -80 deg, readout noise levels of less than 4 electrons rms, and excellent charge transfer efficiency at signal levels of less than 10 electrons. A second generation of devices that capitalize on these characteristics have been produced and are currently in test. Faster frame transfer devices that preserve these characteristics have been designed that include tridirectional taps in the serial register. The state of the art in CCD's as photon counting detectors is reviewed.

Delamere, W. A.↗

NASA NTRS1991

The Space Telescope imaging spectrograph 2048 CCD and its characteristics

Development of a 2048-squared CCD for a second-generation Space Telescope instrument has produced some very encouraging devices. The first experimental lot of 10 devices have very few defects, dark currents of less than 40 electrons/pixel/hour at -80 C, readout noise levels of less than 4 electrons rms and excellent charge transfer efficiency at signal levels of less than 10 electrons.

Delamere, W. A.↗

NASA NTRS1986

EUV astronomical spectroscopy with CCD detectors

The applicability of CCD detectors to astronomical extreme ultraviolet (EUV) spectroscopy (100-1250 A) is discussed. The advantages of CCDs in this spectral region include internal electron yield, the potential for very high quantum efficiency (about 50-90 percent), and broad wavelength response. Visible light suppression is achieved by a combination of low grating scattering, greater than unity electron yield in the EUV, and various filter techniques. For the current generation of CCDs, detection of only a few EUV photons will rapidly overwhelm the read noise; thus, for all practical S/N ratios used in astronomical spectroscopy, read noise will be negligible compared to the poisson statistics of the detected photons. A model based on experimental data for the quantum efficiency and electron yield of CCDs in the EUV is discussed.

Stern, R. A.↗

NASA NTRS1985

Potential of CCDs for UV and X-ray plasma diagnostics

A program is under way to develop charge-coupled device (CCD) sensors for space-based X-ray astronomy imaging spectrometers. To date, laboratory line-emission spectra have been acquired throughout the range of 277 to 8000 eV (carbon through copper K-alpha emission) and CCD sensitivity has been demonstrated throughout the range of 1.1 through 8000 eV. Image resolution is excellent, limited almost entirely by the 15 micron pixel size. These results are presented and specialized techniques are described which permit such low energy response, high spectral resolution, and efficient charge collection. Finally, analysis is presented of one particular CCD characteristic which currently limits UV and X-ray performance: charge diffusion.

Janesick, J. R.↗

NASA NTRS1985

Present and future CCDs for UV and X-ray scientific measurements

Interacting quantum efficiencies in excess of 50 percent have been demonstrated with CCDs throughout the spectral range 600-9,00 A, and comparable sensitivity is expected to continue to wavelengths as short as a few Angstroms. Nondispersive X-ray spectra throughout the 250-8000 V range have been obtained with an FWHM spectral resolution of 200-250 eV. At present, however, both spectral and spatial resolution is limited at some energies by the diffusion of photogenerated charge into more than one picture element. Progress in reducing charge diffusion is reported, with particular attention given to a theoretical diffusion model and its implications for further improvement.

Janesick, J. R.↗

NASA NTRS1985

Large area CCD image sensors for scientific applications

The designs of the 512 x 512 pixel and 2048 x 2048 pixel CCD sensors developed for scientific imaging are described. Both sensors are manufactured using the three phase, three level polysilicon gate technology, and the architecture of the chips is series-parallel-series. The components of the two different on-chip amplifiers are examined. The sensors are thinned and operated in the back side illumination mode to ensure the highest quantum efficiency. The performances of a number of front side illuminated devices and two thinned rear illuminated chips are evaluated. It is observed that the sensors equal or exceed their proposed charge transfer efficiency of 0.99999, the noise level of 2 e- and 20 e- at 50 kp/s, the quantum efficiency of 40 percent at 400 microns and 70 percent at 700 microns, and of the well capacity of greater than 500 ke-/pixel.

Blouke, M. M.↗

NASA NTRS1984

The future scientific CCD

Since the first introduction of charge-coupled devices (CCDs) in 1970, CCDs have been considered for applications related to memories, logic circuits, and the detection of visible radiation. It is pointed out, however, that the mass market orientation of CCD development has left largely untapped the enormous potential of these devices for advanced scientific instrumentation. The present paper has, therefore, the objective to introduce the CCD characteristics to the scientific community, taking into account prospects for further improvement. Attention is given to evaluation criteria, a summary of current CCDs, CCD performance characteristics, absolute calibration tools, quantum efficiency, aspects of charge collection, charge transfer efficiency, read noise, and predictions regarding the characteristics of the next generation of silicon scientific CCD imagers.

Janesick, J. R.↗

NASA NTRS1981

Texas Instruments /TI/ 800 x 800 charge-coupled device /CCD/ image sensor

Very-large area high-performance CCD image sensors with 800 x 800 pixel format have been successfully fabricated and operated on the basis of a three-level polysilicon gate technology. They are thinned to 8 microns over the entire 12.2 x 12.2 mm active area, and are used in the rear illumination mode. The light transfer characteristic has a gamma value of 1.000 + or - 0.002 over most of the dynamic range. Analysis of the noise behavior shows that the device SNR is shot-noise-limited over most of the dynamic range. Simple on-chip signal processing can be performed using an integration well to noiselessly collect signal charge from multiple pixels prior to reading out the charge. A UV-sensitive phosphor has been applied to the chip, yielding a device capable of imaging at wavelengths from the vacuum UV to the near IR.

Blouke, M. M.↗

NASA NTRS1981

Virtual phase imager for Galileo

A CCD imaging array with a new virtual-phase technology that has been developed for use in a slow-scan imaging system for NASA's Galileo mission to Jupiter is described. Among its features are an absence of interlevel shorts, simplicity of fabrication, low dark current (less than 0.4 nA/sq cm), high full well, high quantum efficiency in the front side illumination mode, large dynamic range (greater than 5000), good charge transfer efficiency (0.99997), excellent linearity (0.2%), uniform pixel response (1%), and improved radiation hardness. It is noted that its operating voltages must be constrained to narrow windows to maintain good charge transfer efficiency and avoid the production of spurious and leakage charge.

Janesick, J. R.↗

NASA NTRS1980

Ultraviolet downconverting phosphor for use with silicon CCD imagers

The properties and application of a UV downconverting phosphor (coronene) to silicon charge coupled devices are discussed. Measurements of the absorption spectrum have been extended to below 1000 A, and preliminary results indicate the existence of useful response to at least 584 A. The average conversion efficiency of coronene was measured to be approximately 20% at 2537 A. Imagery at 3650 A using a backside illuminated 800 x 800 CCD coated with coronene is presented.

Blouke, M. M.↗