On the nature of annealed semiconductor surfaces.
Annealed semiconducting Si /111/ surfaces, noting surface structure associated with very thin silicide reaction layers
Engineering topics
Publications and source records attributed to Bauer, E..
Annealed semiconducting Si /111/ surfaces, noting surface structure associated with very thin silicide reaction layers
Structure of epitaxial films, surface layers with low energy electron diffraction, and tungsten single crystal layers
Effects of impurities on epitaxy of fcc metals on alkali halides, and thin film orientation
Explore the source record for details and available documents.
Theoretical and experimental investigation of physics of crystalline surfaces
Epitaxial growth of single crystal, impurity free metal films using clean alkali halide surfaces in ultrahigh vacuum
Total and differential scattering cross section for slow electron calculation, using nonrelativistic quantum mechanics, shown to be erroneous
Residual gas influence on orientation of vapor deposited NaCl crystals
Theoretical and experimental physics of crystalline surfaces - vacuum film deposition, nucleation processes, growth of high purity film, and slow electron scattering cross section
Growth of high purity single-crystal gold films on sodium chloride and potassium chloride substrates by vacuum deposition
Relativistic effects in calculations of slow electron scattering cross sections
Crystalline surface physics - film layer structures, surface and interfacial energies, electron diffraction, and electron emission properties
Single crystal metal film formation on alkali halides, crystal structure and electron emission properties of work functions, and relativistic effects on slow electron scattering
Kinetics of formation of thin continuous films from isolated three-dimensional nuclei
Single crystal film structure of fcc metals evaporated in ultrahigh vacuum onto alkali halide surfaces cleaved in air and in situ
Formation of thin continuous films from isolated nuclei and effect of electron beam, residual gases, and surface conditions on film growth