Trap-Related Parametric Shifts under DC Bias and Switched Operation Life Stress in Power AlGaN/GaN HEMTs.
Abstract not provided.
Kaplar, Robert↗
Engineering topics
Atcitty, Stanley
Publications and source records attributed to Atcitty, Stanley.
Band Offsets of La2O3 and Gd2O3 on AlxGa1-xN (0=x=0.67) as Measured by Photoelectron Spectroscopy.
Abstract not provided.
Brumbach, Michael T↗
Switching frequency optimization of a high-frequency link based energy storage system.
Abstract not provided.
Atcitty, Stanley↗
Trap-Related Parametric Shifts under DC Bias and Switched Operation Life Stress in Power AlGaN/GaN HEMTs.
Abstract not provided.
Kaplar, Robert↗
Impact of Gate Stack on the Stability of Normally-Off AlGaN/GaN Power Switching HEMTs.
Abstract not provided.
Kaplar, Robert↗
Performance and Reliability Characterization of 1200 V Silicon Carbide Power JFETs at High Temperatures.
Abstract not provided.
Flicker, Jack David↗
Sensitivity Analysis of a New Technique for Trapped Charge Extraction in SiC MOSFETs from Subthreshold Characteristics.
Abstract not provided.
Hughart, David Russell↗
Capacitor Development for Reliable High Temperature Operation in Inverter Applications.
Abstract not provided.
Brown-Shaklee, Harlan James↗