Engineering topics
Publications and source records attributed to Anspaugh, B. E..
Electrical characteristics of Solarex back-surface-field, 2-ohm-cm, 50-micron N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity, temperature, and irradiation.
Parametric characterization data on Spectrolab 2 by 4 cm, 2 ohm/cm, 228 micron thick wraparound cell, a candidate for the Solar Electric Propulsion Mission, are presented. These data consist of the electrical characteristics of the solar cell under a wide range of temperature and illumination intensity combinations of the type encountered in space applications.
Moderate resolution spectral irradiance measurements in the range 300 nm to 1100 nm have been made of eight radiant sources which are currently being used as solar simulators. Spectral irradiance data are presented in graphical form. To demonstrate the interplay of source spectral distribution and cell spectral response, measurements of short circuit current of five cells of differing response characteristics have been made with these sources. These results are presented in tabular and graphical form.
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Electrical characteristics of textured, back surface field, 10 ohm cm, 300 micron N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity, and temperature.
A set of parametric data is presented on the Spectrolab textured, back-surface-field, back-surface-reflector solar cell which is a commercially available product.
The electrical behavior of 100 micron thick tandem junction solar cells manufactured by Texas Instruments was studied as a function of 1 MeV electron fluence, photon irradiation, and 60 C annealing. These cells are found to degrade rapidly with radiation, the most serious loss occurring in the blue end of the cell's spectral response. No photon degradation was found to occur, but the cells did anneal a small amount at 60 C.
The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.
Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.
Electrical parametric data are presented on BSF, BSR, textured 10 ohm cm, 50 micron advanced OAST cells in graphical and tabular form as functions of solar illumination intensity, temperature, and 1 MeV electron fluence.
Electrical characteristics of Spectrolab HEWAC BSF, textured, 10 ohm cm, 225 micron solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature.
Computed statistical averages and standard deviations with respect to the measured cells for each intensity temperature measurement condition are presented. Display averages and standard deviations of the cell characteristics in a two dimensional array format are shown: one dimension representing incoming light intensity, and another, the cell temperature. Programs for calculating the temperature coefficients of the pertinent cell electrical parameters are presented, and postirradiation data are summarized.
Electrical characteristics of Mariner '71 type of silicon solar cells are presented in graphical and tabular format as a function of intensity and temperature.
A number of modern solar cell types representing 1976 technology (as well as some older types) were irradiated with 1 MeV electrons (and a limited number with 2 MeV electrons and 10 MeV protons). After irradiation, the cells were annealed, with I-V curves measured under AMO at 30 C. The purpose was to provide data to be incorporated in the revision of the solar cell radiation handbook. Cell resistivities ranged from 2 to 20 ohm-cm, and cell thickness from 0.05 to 0.46 mm. Cell types examined were conventional, shallow junction, back surface field (BSF), textured, and textured with BSF.
Conventional n/p and lithium solar cells were irradiated with 11- to 37-MeV protons. The energy dependence of the solar cell degradation, calculated from electrical parameters and lifetime measurements, is shown to be very slight. Damage coefficients for the n/p cells are calculated. Annealing characteristics of both the lithium cells and the n/p cells are presented.
The results of the ATS-5 solar cell experiment after one year in synchronous orbit are reported. A partial failure in the experimental electronics package has caused a loss of data from half the 80 experimental solar cells. Procedures for extracting data due to a partial spacecraft failure are described and discussed. Data from the remaining 40 solar cells, including 15 mounted on a thin flexible structure are analyzed. Data are corrected to a solar intensity of 140 mW/sq cm and a temperature of 25 C. It was found that after one year in synchronous orbit: (1) cells with 1.52-mm-thick coverslides did not show a clear-cut advantage over those with 0.15-mm coverslides, (2) cells with solderless grid lines are degrading at the same rate as are cells with solder-dipped grid lines, (3) cells not quite completely covered with coverslides suffered a large power loss in comparison to cells fully covered, (4) no clear-cut advantage of 10-cm cells over 2-cm cells has yet been observed, (5) cells mounted on the flexible panel with relatively little backshielding did not degrade any faster than those with substantial backshielding, and (6) the flight data in large part confirms the adequacy of the ground-based techniques used in our preflight radiation test program.
The data from the ATS-5 solar cell experiment for the first 699 days in synchronous orbit is presented. Comparison of the performance of several different types of solar cell/coverslide configurations is made. This behavior is in turn compared with the calculated performance for such cell/coverslide configurations in synchronous orbit and with the results of accelerator irradiations designed to simulate the omnidirectional electron environment. It is generally found that the cells on the flight experiment perform like the cells irradiated with the accelerator, but they degraded more than predicted by the calculation. Solar cells mounted on a thin kapton panel are degrading about the same as are their counterparts mounted on a rigid panel.