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Anspaugh, B. E.

Publications and source records attributed to Anspaugh, B. E..

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Annealing results on low-energy proton-irradiated GaAs solar cells

AlGaAs/GaAs solar cells with an approximately 0.5-micron-thick Al(0.85)Ga(0.15)As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10 to the 12th protons/sq cm. The irradiated cells were annealed at temperatures between 150 and 300 C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.

Kachare, R.↗
NASA NTRS1988

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Kachare, R.↗
NASA NTRS1987

Results of the 1987 NASA/JPL balloon flight solar cell calibration program

The 1987 solar cell calibration balloon flight was successfully completed on August 23, 1987, meeting all objectives of the program. Forty-eight modules were carried to an altitude of 120,000 ft (36.0 km). The cells calibrated can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS1987

Results of 1 MeV proton irradiation of front and back surfaces of silicon solar cells

Several silicon solar cells with and without back surface fields (BSF), having thicknesses of 200 microns and 63 microns were irradiated with 1 MeV protons having fluences between 1 times 10 to the 10th power and 1 times 10 to the 12th power p/square cm. The irradiation was performed using both normal and isotropic incidence on the front as well as back surfaces of the solar cells. The results of the back surface irradiations are analyzed using a model in which irradiation induced defects across the high-low (BSF) junction are considered. It is concluded that degradation of the high-low junction is responsible for the severe performance loss in thinner cells when irradiated from the rear.

Anspaugh, B. E.↗
NASA NTRS1987

One-Dimensional Simulation of Isotropic Radiation

Solar cells tested for effects of radiation in unidirectional beam. Cam groove imparts cosecant-function velocity to solar cells on rotating target plate. Cells on stationary plate above rotating one absorb steady perpendicular radiation from test source.

Anspaugh, B. E.↗
NASA NTRS1987

Radiation characteristics of low resistivity float zone silicon solar cells

The effects of 1-MeV electron irradiation on silicon solar cells with AM0 efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. These cells do not demonstrate post-electron-irradiation photon decay as has been described for cells processed on 1-10 ohm-cm FZ silicon.

Crotty, G. T.↗
NASA NTRS1987

Temperature characteristics of silicon space solar cells and underlying parameters

Silicon space cells, 2 cm x 2 cm, with 10 ohm-cm p-base resistivity, 8-mil base thickness, and no back-surface fields have been investigated over the temperature range from 301 to 223 K by measurements of dark forward and reverse current-voltage characteristics and current-voltage relations under illumination. From dark forward bias data, the first and second diode saturation currents, I01 and I02, are determined and hence the base diffusion length and lifetime of minority carriers as functions of temperature. Lifetime increases exponentially with temperature and is explained by a Shockley-Read-Hall model with deep recombination levels 0.245 eV above the valence band. The I02 variation with temperature follows the Sah-Noyce-Shockley-Choo model except at low temperature where extra transitions raise the value above the predicted level. Reverse bias current at low voltage is a thermally assisted tunneling process via deep levels which are observed in base recombination at higher temperatures. The tunneling effects tend to become independent of temperature in the low-temperature region. These results demonstrate the ability to deduce basic parameters such as lifetime from simple measurements and show that back-surface fields offer no advantage at temperatures below 230 K. The analysis also explains the fall in lifetimes observed as the base conductivity increases, attributing it to native defects (perhaps carbon-oxygen-vacancy complexes) rather than the concentration of base dopant.

Anspaugh, B. E.↗
NASA NTRS1986

Results of the 1985 NASA/JPL balloon flight solar cell calibration program

The 1985 solar cell calibration balloon flight was successfully completed on July 12, 1985, meeting all objectives of the program. Fifty-seven modules were carried to an altitude of 115,000 ft (35.0 km). The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS1986

Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells

AlGaAs/GaAs solar cells with about 0.5-micron-thick Al(0.85)Ga(0.15)As window layers were irradiated using isotropic and normal incidence protons having energies between 50 and 500 keV with fluences up to 1 x 10 to the 12th protons/sq cm. Although the projected range for these protons varies from 0 to more than 4.5 microns, the recombination losses due to the irradiation-induced defects were observed to be maximum in the vicinity of the AlGaAs/GaAs interface and the space-charge region irrespective of the proton energy. This was found by analyzing spectral response measurements. The results are explained by using a model in which the interaction of as-grown dislocations with irradiation-induced point defects is considered.

Kachare, R.↗
NASA NTRS1986

Results of the 1986 NASA/JPL Balloon Flight Solar Calibration Program

The 1986 solar cell calibration balloon flight was successfully completed on July 15, 1986, meeting all objectives of the program. Thirty modules were carried to an altitude of 118,000 ft (36.0 km). The calibrated cells can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS1985

Solar cell calibration facility validation of balloon flight data: A comparison of shuttle and balloon flight results

The Solar Cell Calibration Facility (SCCF) experiment was designed and built to evaluate the effect of the Earth's upper atmosphere on the calibration of solar cell standards. During execution of the experiment, a collection of carefully selected solar cells was flown on the shuttle, and reflown on a high-altitude balloon, then their outputs were compared. After correction to standard temperature and intensity values of 28 C and an Earth-Sun distance of 1 AU, the solar cell outputs during the two flights were found to be identical. The conclusion is therefore that the high-altitude balloon flights are very good vehicles for calibrating solar cells for use as space flight reference standards.

Anspaugh, B. E.↗
NASA NTRS1985

Characterization of terrestrial solar cells for space applications: Electrical characteristics of thin Westinghouse dendritic web cells as a function of solar intensity, temperature, and incidence angle

Electrical characteristics of thin (100- and 140-micron) Westinghouse dendritic-web N/P silicon solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. Performance is also shown as a function of solar illlumination angle of incidence for AMO.

Stella, P. M.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
NASA NTRS1984

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Anspaugh, B. E.↗
NASA NTRS1982

Solar cell radiation handbook

The handbook to predict the degradation of solar cell electrical performance in any given space radiation environment is presented. Solar cell theory, cell manufacturing and how they are modeled mathematically are described. The interaction of energetic charged particles radiation with solar cells is discussed and the concept of 1 MeV equivalent electron fluence is introduced. The space radiation environment is described and methods of calculating equivalent fluences for the space environment are developed. A computer program was written to perform the equivalent fluence calculations and a FORTRAN listing of the program is included. Data detailing the degradation of solar cell electrical parameters as a function of 1 MeV electron fluence are presented.

Tada, H. Y.↗
NASA NTRS1981

Characterization of solar cells for space applications. Volume 14: Electrical characteristics of Hughes liquid phase epitaxy gallium arsenide solar cells as a function of intensity, temperature and irradiation

Electrical characteristics of liquid phase epitaxy, P/N gallium aluminum arsenide solar cells are presented in graphical and tabular format as a function of solar illumination intensity and temperature. The solar cells were exposed to 1 MeV electron fluences of, respectively, 0, one hundred trillion, one quadrillion, and ten quadrillion e/sq cm.

Anspaugh, B. E.↗
NASA NTRS1981

Damage and coefficients and thermal annealing of irradiated silicon and GaAs solar cells

Electron and proton damage coefficients have been measured for several types of silicon cells of recent manufacture using 1 MeV electrons and protons with energies of 8.3, 17.5 and 40 MeV. LPE (AlGa)As-GaAs cells were also irradiated and pseudodamage coefficients derived under the assumption that the irradiation changes the diffusion length in only one of the n- or p-type layers. After irradiation the cells were annealed isochronally up to 450 C. The damage coefficient and annealing data for silicon cells are in substantial agreement with previous work. The GaAs cells have pseudo-damage coefficients which are dependent on fluence, and have about the same energy dependence as Si damage coefficients.

Anspaugh, B. E.↗