Engineering topics

Aharonyan, P.

Publications and source records attributed to Aharonyan, P..

4 records

NASA NTRS1982

ID wafering technology

Improvements in ID saws leading to lower costs for producing silicon wafers for solar cells are described. The relationships between crystal size and blade size and between the length of time it takes to slice a wafer and wafer thickness are discussed. The influence of ingot production methods on wafering performance is considered. A cost sensitivity analysis of slicing a 10 cm square ingot and economic analyses of slicing a four inch and a six inch ingot are presented. A wafering cost model based on the IPEG 2 is given.

Aharonyan, P.↗

NASA NTRS1980

Development of methods of producing large areas of silicon sheet by the slicing of silicon ingots using Inside Diameter (I.D.) saws

Modifications to a 16 inch STC automated saw included: a programmable feed system; a crystal rotating system; and a STC dynatrack blade boring and control system. By controlling the plating operation and by grinding the cutting edge, 16 inch I.D. blades were produced with a cutting edge thickness of .22 mm. Crystal rotation mechanism was used to slice 100 mm diameter crystals with a 16 inch blade down to a thickness of .20 mm. Cutting rates with crystal rotation were generally slower than with standard plunge I.D. slicing techniques. Using programmed feeds and programmed rotation, maximum cutting rates were from 0.3 to 1.0 inches per minute.

Aharonyan, P.↗

NASA NTRS1980

Development of methods of producing large areas of silicon sheet by the slicing of silicon ingots using Inside-Diameter (I.D.) saws

Inside diametar wafering equipment, blades and processes were used to develop methods to produce large areas of silicon sheet. Modifications to a 16 inch STC automated saw included: programmable feed system, crystal rotating system, and STC dynatrack blade monitoring and control system. By controlling the plating operation and by grinding of the cutting edge, 16 inch ID blades with a cutting edge thickness of .22 mm can be produced. Crystal rotation mechanism was used to slice 100 mm diameter crystals with a 16 inch blade down to a thickness of .20 mm. Cutting rates with crystal rotation were generally slower than with standard plunge ID slicing techniques. Using programmed feeds and programmed rotation, maximum cutting rates were from 0.3 to 1.0 inches per minute.

Aharonyan, P.↗

NASA NTRS1979

Development of Methods of Producing Large Areas of Silicon Sheet by the Slicing of Silicon Ingots Using Inside Diameter (I.D.) Saws

Methods of producing large areas of silicon sheets were developed by using inside diameter (I.D.) saws to slice silicon ingots. A 16 inch automated I.D. slicing machine was modified to accept programmable electric feed system, a crystal rotating system and a dyna-track blade monitoring and control system. The saw and accessories were used to slice 75 mm diameter single crystal silicon ingots while rotating them. The automated saw automatically recovered the wafers and loaded them into a cassette. The amount of material lost during slicing was reduced by using smaller blades than ones normally used to slice the wafers. Slicing runs on 100 mm diameter silicon is the next goal.

Aharonyan, P.↗