Switching Transition Analysis and Optimization for Bidirectional CLLC Resonant DC Transformer
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Novel Quadratic High Gain Boost Converter With Adaptive Soft-Switching Scheme and Reduced Conduction Loss
In this article, an improved soft-switching quadratic boost converter is proposed. Instead of inserting an additional active clamp or auxiliary zero-voltage transition circuit at the switching node, the proposed topology connects the high-voltage switching node to the input diode node by replacing one of the input diodes with a low-rated switch. The proposed topology can attain soft-switching condition for all the switches and input diode turns- off under zero-current switching (ZCS). The operation of input-side switch not only aids zero-voltage switching (ZVS) turn- on for the main switch but also helps in reducing the conduction loss. Also, the input-side switch operates under ZCS turn- on and ZVS turn- off , making it a loss economical solution. An adaptive timing scheme for driving the input switch is proposed, which can ensure soft-switching condition under varying gain and load range. The detailed operational modes, analysis, and design considerations of the proposed topology are presented. A 250 W hardware prototype is built to validate the performance of the proposed converter operating at 100 kHz switching frequency. Results with adaptive soft-switching scheme shows that the converter is modulated to achieve its best efficiency condition under various system conditions. Furthermore, a peak efficiency of 96.1% at 155 W and efficiencies above 95.75% over a wide load range are achieved using all Si devices.
14 SOLAR ENERGY↗
Constant Frequency ZVS PWM Converter
In this paper, a simple yet novel buck or boost adaptive zero-voltage switching (ZVS) converter topology is proposed for soft switching pulse-width modulation (PWM) dc / dc converters. The converter is designed for the high switching frequency that can achieve high efficiency by reducing switching losses for the entire load range at low and high power. Besides, the output at the load terminals is maintained by a PWM signal at a fixed switching frequency, a phase shift signal between converter ports (legs) controls the system circulating current in order to provide the ZVS condition in all load conditions. With the proposed controller, the converter, thus, is suitable for high switching frequency and high-power applications with the small volume. The proposed dc / dc converter operation is analyzed, designed, and confirmed by simulation results for 240 V input, 400 V / 5 A output, and 200 kHz operating frequency at full load.
Asa, Erdem↗
Three-Phase LCC-LCC Compensated 50-kW Wireless Charging System with Non-Zero Interphase Coupling
In this paper, an LCC-LCC compensated 50 kW 3phase (3φ) wireless charging system with nonzero interphase mutual inductance is demonstrated. The 3φ-LCC compensation is designed considering a nonzero mutual-inductance among the phase-coils to meet resonance criteria, balance voltages and currents of the resonant tank components, achieve desired voltage gain, and ensure the zero-voltage switching (ZVS) operation. An experimental prototype of the 3φ-LCC-LCC compensation circuit is built for a 50 kW bipolar coil-based 3φ wireless charging system. The prototype system was tested at rated 50 kW power for evaluating the efficiency, ZVS operation, electric and magnetic field emissions, and thermal characteristics. The experimental results show 94.3% dc-to-dc efficiency and only 4.4 μT rms magnetic field emission at the rated 50 kW output power.
Mohammad, Mostak↗
Triple Phase-Shift Optimization of SiC-based Dual-Active Bridge DC/AC Converter
This paper presents a loss-optimized Triple Phase-Shift (TPS) switching strategy for Dual-Active Bridge (DAB) based converters. The proposed strategy considers minimizing total converter loss with respect to minimizing device rms cur-rents, enabling Zero-Voltage Switching (ZVS) turn-on of devices and accurate control of device turn-off current. A model for switching currents is presented, followed by a loss model and optimization strategy. A 1.3kV/100kW prototype based on SiC MOSFETs was used in this work and experimental results up to 10kW show the proposed TPS strategy to be more efficient for operation.
Vetrivelan, Adithyan↗
Soft-Switching Solid-State Transformer With Reduced Conduction Loss
Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.
14 SOLAR ENERGY↗
Current-Source Solid-State DC Transformer Integrating LVDC Microgrid, Energy Storage, and Renewable Energy Into MVDC Grid
Solid-state DC transformer to integrate low-voltage DC (LVDC) microgrid, wind turbine (WT) generator, photovoltaic (PV), and energy storage (ES) into medium-voltage (MV) direct-current (MVDC) distribution grids is attractive. This paper proposes current-source DC solid-state transformer (SST) for MVDC collection system in WT, PV, and ES farms or as an interface between the MVDC grid and the LVDC microgrid. Compared to conventional current-source converter (CSC) based SSTs, a switch reduction scheme on reverse-blocking device bridges is proposed to reduce device count and the number of devices on the DC-link current path. Importantly, the proposed switch reduction scheme is generic and can be applied to the DC ports of DC-AC, AC-DC, or DC-DC hard-switching or soft-switching CSC-based SSTs. Based on this scheme, the proposed current-source DC SSTs are derived, which have reduced electrolytic-capacitor-less DC-link. The proposed DC SSTs also achieve single-stage isolated DC-DC or DC-AC conversion, full-range zero-voltage switching (ZVS) for main switches, zero-current switching (ZCS) for resonant switches, and controlled dv/dt. The proposed DC SSTs, operating principles, predictive control method, the ZVS, and the controlled dv/dt under voltage buck-boost ranges are verified with MV simulations and an experimental prototype based on SiC MOSFETs, diodes, and a nanocrystalline transformer.
14 SOLAR ENERGY↗
New Modulation and Impact of Transformer Leakage Inductance on Current-Source Solid-State Transformer
This article presents a novel modulation scheme for device voltage stress mitigation and comprehensive analysis of the impact of transformer leakage inductance in a current-source solid-state transformer (SST). Different from dual active bridge (DAB) SST, the operation of the current-source SST is similar to that of a flyback converter. The device bridge on only one side of the transformer is active to store energy into or release energy from the magnetizing inductance which acts as a current-source dc link. Such flyback operation with reverse-blocking switches can lead to additional device voltage stress and incomplete zero-voltage switching (ZVS) on the current-source soft-switching solid-state transformer (S4T) under conventional modulation. A new modulation scheme is proposed to address this issue. Moreover, different from the DAB, the leakage inductance of the medium-frequency transformer (MFT) in the S4T is a parasitic element similar to that in a matrix SST and can cause additional device voltage stress. Though the resonant capacitors, originally added to achieve ZVS, can absorb and recycle the leakage energy in the S4T, these capacitors need to be increased with larger leakage inductances to limit the voltage stress. However, large resonant capacitors can result in more lost duty cycles and reduced efficiency. The impact of such leakage inductance on device voltage stress is analyzed comprehensively, which is critical to guide future research and design of the S4T. Experimental results from S4T prototypes for DC-DC, multiport AC-DC, and AC-AC conversion with 1:1 and 4:1 MFT comprehensively verify the proposed concepts. Lastly, a case study of a three-phase AC-AC S4T over a power range from 1 kVA to 100 kVA each module reveals that the MFT leakage inductance should be less than 1% of the magnetizing inductance for safe operation.
14 SOLAR ENERGY↗
PWM for Simultaneous Minimization of Switching Losses and CM Voltage in Current Source Inverters
This article proposes a new pulsewidth modulation (PWM) scheme that reduces common-mode (CM) voltage and switching losses simultaneously in CSI. The proposed PWM [i.e., reduced voltages PWM (RVM)] reduces CM voltages and switching losses by selecting the optimal zero current vector and PWM sequence based on the CSI output voltage conditions. This article also proves the proposed RVM achieves both objectives (i.e., reduced CM voltage and switching losses) simultaneously for all CSI operating conditions without compromising the other objective. The proposed RVM inherently achieves zero-voltage switching (ZVS) conditions during the zero current vector transitions, further reducing the switching losses. Experimental results demonstrate significant reductions in CM voltage, reaching up to approximately 95%, accompanied by an increase of up to about 5.5% in CSI efficiency across a wide operating range compared to alternative PWM methods, confirming the predicted advantages of the proposed RVM.
42 ENGINEERING↗
Improved Frequency-Domain Steady-State Modeling of the Dual-Active-Bridge Converter Considering Finite ZVS Transition Time Effects
This article presents an improved analytical modeling (IAM) approach for the dual-active-bridge (DAB) converter in the frequency-domain. Specifically, finite transition times are incorporated into the improved modeling that are significant in DAB converters operated at high frequency. The IAM approach is first motivated by comparing traditional frequency-domain modeling against realistic simulation results in LTspice. Next, the IAM approach is mathematically developed in an iterative fashion, where the conventional frequency-domain approach is used as the initialization of the operational behavior of the converter. Subsequent iterations of the IAM algorithm incorporate finite rise- and falltimes of device output capacitances based on detailed switching behavior analyses, which may considerably perturb the desired modulation parameters (i.e., phase shift and zero states). While the initially proposed IAM approach demonstrates advantages over ideal modeling, it is still shown to exhibit errors when applied to device transitions with significant nonlinearity in parasitic output capacitance. To account for this, a three-slope approximation to the switching transition is then motivated and developed, which enables significantly improved steady-state prediction accuracy. Simulation and experimental results confirm unacceptable inaccuracies associated with the conventional frequency-domain modeling across a wide range of operating conditions, alongside enhanced accuracy provided by the proposed modeling approach.
14 SOLAR ENERGY↗
SiC-Based 5-kV Universal Modular Soft-Switching Solid-State Transformer (M-S4T) for Medium-Voltage DC Microgrids and Distribution Grids
Medium-voltage DC (MVDC) grids are attractive for electric aircraft and ship power systems, battery energy storage system (BESS), fast charging electric vehicle (EV), etc. Such EV or BESS applications need isolated bidirectional MVDC to LVDC or LVAC converters. However, the existing Si-based solutions cannot fulfill the requirements of a high-efficiency and robust converter for MVDC grids. This paper presents a 5 kV SiC-based universal modular solid-state transformer (SST). This universal current-source SST can interface either a LVAC or LVDC grid with a MVDC grid in single-stage power conversion, while the conventional dual active bridge (DAB) converter needs an additional inverter. The proposed SST module using 3.3 kV SiC MOSFETs and diodes is bidirectional and can serve as a building block in series or parallel for higher-voltage higher-power systems. The topology of each module is based on the soft-switching solid-state transformer (S4T) with reduced conduction loss, which features reduced EMI through controlled dv/dt, and high efficiency with full-range ZVS for main devices and ZCS for auxiliary devices. Operation principle of the modular S4T (M-S4T), capacitor voltage balancing control between the cascaded modules, design of components including a medium-voltage (MV) medium-frequency transformer (MFT) to realize a 50 kVA 5 kV DC to 600 V DC or 480 V AC M-S4T are presented. Importantly, the MV MFT prototype achieves very low leakage inductance (0.13%) and 15 kV insulation with coaxial cables and nanocrystalline cores. Here, the proposed universal modular SST is compared against the DAB solution and verified with DC-DC and DC-AC simulation and 4 kV experimental results. Significantly, the MV experimental results of a modular DC transformer with each module at MVDC are rarely covered in the literature and reported for the first time.
14 SOLAR ENERGY↗
Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer
Grounding related issues are critical for safe and reliable operation of solid-state transformer (SST) in medium-voltage (MV) applications, e.g., solar photovoltaic and energy storage integration, date center, electric vehicle fast charging, etc. This article presents for the first time the issue of additional device voltage stress due to grounding-loop current in current-source SST, using the soft-switching solid-state transformer (S4T) as an example. The S4T features single-stage isolated AC-AC, AC-DC, or DC-DC conversion with full-range ZVS, derived from flyback converter or current-source converter (CSC). However, the flyback operation for CSC-based SST means that magnetizing current flows through the reverse-blocking devices on only one side of the medium-frequency transformer (MFT) at a time. Then, the voltages across the devices, especially those on the other side of the MFT, can be influenced by parasitic current. A parasitic model of a modular S4T (M-S4T) prototype is developed from direct measurements and datasheets. Using the developed parasitic model and equivalent circuits, the causes of the voltage stress are analyzed. A voltage-stress mitigation scheme of connecting additional grounding capacitors is proposed. Damping resistors are also installed to damp out the grounding-loop resonance. A robust parameter design of the proposed scheme is given. The existence of the voltage stress issue and the effectiveness of the proposed scheme are verified experimentally on an MV SiC M-S4T prototype with inherent parameter variations among the five modules in the prototype. Here, both single-module and stacked-module operation are demonstrated during steady state and dynamic conditions up to 4 kV peak.
42 ENGINEERING↗
Design of power electronics for TVC and EMA systems
The EMA systems proposed for future space transportation applications are high power systems operating at voltages up to 270 Vdc and at current levels on the order of hundreds of amperes. The position of the actuator is controlled by modulating the flow of energy from the source to an electric motor with an inverter. Hard-switching of the semiconductor devices in the inverter results in considerable device switching stresses and losses and in the generation of substantial amounts of EMI. Both of these can be reduced by employing zero-voltage-switching (ZVS) techniques in the inverter. This project has focused on the development of a ZVS inverter for the Marshall Space Center EMA prototypes, which utilize brushless dc motors to convert electrical energy to mechanical energy. An inverter which permitted zero-voltage switching and a quasi-PWM operation was selected for study and implementation. A waveshaping circuit is added to the front of a standard three-phase inverter to achieve the desired switching properties. This circuit causes the input voltage of the three-phase inverter to ring to zero where it is clamped for a short period of time. During this zero-voltage period, any of the semiconductor switches in the three-phase inverter are switched on or off at zero voltage resulting in a reduction in switching losses and EMI. The operation of this waveshaping circuit and its interaction with the three-phase inverter are described. The different circuit modes were analyzed using equivalent circuits. Based on this analysis, design relationships were developed for calculating component values for the circuit elements in the waveshaping circuit. Waveforms of various voltages and currents in the waveshaping circuit were plotted and used to determine the ratings of the semiconductors in the waveshaping circuit. The implementation of this inverter are described. Block diagrams for the overall control system and the waveshaping circuit control are presented and discussed. The current control scheme employed in the controller is also described.
Nelms, R. Mark↗
7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection
This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.
14 SOLAR ENERGY↗
Radiation Effects on DC-DC Converters
In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.
Zhang, De-Xin↗