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At least 19 records

Long Duration Venus Probes and Landers

Planetary probes have long been a tool used by scientists to gain early clues on environments and systems of new planetary targets. This not only fueled the scientific process but also helped prepare for future missions, such as landers, and helped ensure their success. Venus, Earth's sister planet, has been the target of more probes and landers than any other body in our solar system except for Earth and yet many fundamental questions are unanswered. Challenge for Venus Surface Science: This lack of knowledge is a result of the challenging Venus environments. Remote sensing of the surface and portions of the atmosphere is difficult at best due to the thick layers of sulfuric acid clouds and the high pressure supercritical CO2 atmosphere below those clouds. This has hampered the ability of orbiting missions to provide us insight into surface features and processes and thus hides potential clues on interior process from our view. Surface probes and landers face an even more daunting challenge, which is the extreme temperature, pressure and unfriendly chemical composition of the near surface atmosphere. Over 10 assets have landed on the surface yet the longest surviving asset Venera-13 lasted only 127 minutes before succumbing to the extreme temperature. While this and other landers provided valuable new data, the short life impacted ability to understand any temporal processes, for example meteorology, seismic active, and therefore very little is known about the interior and surface atmosphere interactions. New Capability Offering Potential Solutions: Re-cent developments by NASA are offering hope of overcoming the technical challenges of surface operations and life with the use of high temperature electronics and systems. Wide band gap, SiC based electronics have been demonstrated to function successfully for extended periods of time both at 500C, Venus surface temperatures as well as when temperature is combined with the reactive chemistry of the surface atmosphere and the high pressures (over 90 bar pressure at the surface). In addition to electronics a number of other subsystems are in development including power in the form of high temperature batteries and power management devices, communications including antennas, transmitters and other components, materials, and structures and mechanisms. These are all activities under NASA's Long Lived In situ Solar System Exploration (LLISSE) project. Other activities are also funded under NASA's HOTTech program.

Kremic, T.↗

Wide Band Gap Radiation Detectors for Deep Space Science

Understanding how the Sun, Earth, and other objects in the solar system interact with the space radiation environment is crucial for improving activities of humans on Earth and in space. Low-power, low-noise, multidirectional robust detectors for detecting ions with a wide range of mass and energies will provide a more complete understanding of space environment physics. To meet these challenges, new ion detectors based on wide band gap (WBG) semiconductors are being developed for integration on a variety of deep space platforms. NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop supporting technologies to enable improved instruments for space science missions. New detector technologies being developed at GRC include SiC solid-state devices as practical robust, thermally stable large area detectors for LET measurements in compact, stacked charged particle telescope. The low-noise, thermally stable nature of the WBG detectors allows a small multidirectional array of charged particle telescopes to be packed in a 6U CubeSat without active cooling for operation in lunar orbit or deep space. Using a full variety of different WBG detectors, an extremely compact instrument to provide multi-directional, comprehensive (composition, velocity, and direction) in-situ measurements of heavy ions in space plasma environments can be realized.

ion detectors↗

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

GaN AlN GaN/AlN↗

Numerical Modeling of Crystal of ZnSe by Physical Vapor Transport - Towards a more Comprehensive Formulations

Crystal growth from the vapor phase has various advantages over melt growth. The main advantage is from a lower processing temperature which makes the process more amenable in instances where the melting temperature of the crystal is high. Other benefits stem from the inherent purification mechanism in the process due to differences in the vapor pressures of the native elements and impurities, and the enhanced interfacial morphological stability during the growth process. Further, the implementation of PVT growth in closed ampoules affords experimental simplicity with minimal needs for complex process control which makes it an ideal candidate for space investigations in systems where gravity tends to have undesirable effects on the growth process. Bulk growth of wide band gap II-VI semiconductors by physical vapor transport has been developed and refined over the past several years at NASA MSFC. Results from a modeling study of PVT crystal growth of ZnSe are reported in this paper. The PVT process is numerically investigated using both two-dimensional and fully three-dimensional formulation of the governing equations and associated boundary conditions. Both the incompressible Boussinesq approximation and the compressible model are tested to determine the influence of gravity on the process and to discern the differences between the two approaches. The influence of a residual gas is included in the models. The results show that both the incompressible and compressible approximations provide comparable results and the presence of a residual gas tends to measurably reduce the mass flux in the system. Detailed flow, thermal and concentration profiles will be provided in the final manuscript along with computed heat and mass transfer rates. Comparisons with the 1-D model will also be provided. The effect of gravity on the process from numerical computations shows subtle effects although experimental evidence from vertically and horizontally grown samples show dramatic evidence of gravitational effects. The shortcomings of the problem formulation will be discussed and a framework will be provided leading up towards a more comprehensive model of PVT systems.

Ramachandran, N.↗

Crystal Growth of ZnSe by Physical Vapor Transport: A Modeling Study

Crystal growth from the vapor phase has various advantages over melt growth. The main advantage is from a lower processing temperature which makes the process more amenable in instances where the melting temperature of the crystal is high. Other benefits stem from the inherent purification mechanism in the process due to differences in the vapor pressures of the native elements and impurities, and the enhanced interfacial morphological stability during the growth process. Further, the implementation of Physical Vapor Transport (PVT) growth in closed ampoules affords experimental simplicity with minimal needs for complex process control which makes it an ideal candidate for space investigations in systems where gravity tends to have undesirable effects on the growth process. Bulk growth of wide band gap II-VI semiconductors by physical vapor transport has been developed and refined over the past several years at NASA MSFC. Results from a modeling study of PVT crystal growth of ZnSe arc reported in this paper. The PVI process is numerically investigated using both two-dimensional and fully three-dimensional formulation of the governing equations and associated boundary conditions. Both the incompressible Boussinesq approximation and the compressible model are tested to determine the influence of gravity on the process and to discern the differences between the two approaches. The influence of a residual gas is included in the models. The preliminary results show that both the incompressible and compressible approximations provide comparable results and the presence of a residual gas tends to measurably reduce the mass flux in the system. Detailed flow, thermal and concentration profiles will be provided in the final manuscript along with computed heat and mass transfer rates. Comparisons with the 1-D model will also be provided.

Ramachandran, Narayanan↗

Crystal Growth by Physical Vapor Transport: Experiments and Simulation Dynamics

Crystal growth from the vapor phase has various advantages over melt growth. The main advantage is from a lower processing temperature, which makes the process more amenable in instances where the melting temperature of the crystal is high. Other benefits stem from the inherent purification mechanism in the process due to differences in the vapor pressures of the native elements and impurities, and the enhanced interfacial morphological stability during the growth process. Further, the implementation of PVT growth in closed ampoules affords experimental simplicity with minimal needs for complex process control, which makes it an ideal candidate for space investigations in systems where gravity tends to have undesirable effects on the growth process. Bulk growth of wide band gap II-VI semiconductors by PVT has been developed and refined over the past several years at NASA MSFC. A new modeling approach for PVT has also been recently formulated and its validation and testing is the main objective of this work.

Ramachandran, N.↗

Advanced Radiation Detectors and Detector Systems Research

Real‐time awareness of space radiation is critical for missions beyond LEO. Missions to the Moon, Mars, Near‐Earth‐Objects (NEOs), inner and outer planets, as well as other destinations in space, will require embedded instrumentation to provide feedback for “smart”, adaptive control systems. Precision instrumentation will also be needed to provide improved data for space radiation modeling and space weather forecasting and awareness. Compact instrumentation on small platforms such as CubeSats and other small space‐faring vehicles will provide a better understanding of the space radiation environment by supplying data from multiple locations in space where information is yet unknown. Compact integrable solid‐state detectors with low noise and high tolerance of operation in a radiation environment are enabled by the application of Wide Band Gap semiconductors as radiation detectors. NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop supporting technologies that enable improved instruments for space science missions. A variety of radiation detectors are under development, such as silicon carbide semiconductor detectors, for applications to space science, lunar prospecting, and fission power systems.

Field and particle detectors↗

Effect of Rare Earth Elements (Er, Ho) on Semi-Metallic Materials (ScN) in an Applied Electric Field

The development of materials and fabrication technology for field-controlled spectrally active optics is essential for applications such as membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras and flat-panel displays. The dopants of rare earth elements, in a host of optical systems, create a number of absorption and emission band structures and can easily be incorporated into many high quality crystalline and amorphous hosts. In wide band-gap semiconductors like ScN, the existing deep levels can capture or emit the mobile charges, and can be ionized with the loss or capture of the carriers which are the fundamental basis of concept for smart optic materials. The band gap shrinkage or splitting with dopants supports the possibility of this concept. In the present work, a semi-metallic material (ScN) was doped with rare earth elements (Er, Ho) and tested under an applied electric field to characterize spectral and refractive index shifts by either Stark or Zeeman Effect. These effects can be verified using the UV-Vis spectroscopy, the Hall Effect measurement and the ellipsometric spectroscopy. The optical band gaps of ScN doped with Er and doped with Ho were experimentally estimated as 2.33eV and 2.24eV ( 0.2eV) respectively. This is less than that of undoped ScN (2.5 0.2eV). The red-shifted absorption onset is a direct evidence for the decrease of band gap energy (Eg), and the broadening of valence band states is attributable to the doping cases. A decrease in refractive index with an applied field was observed as a small shift in absorption coefficient using a variable angle spectroscopic ellipsometer. In the presence of an electric field, mobile carriers are redistributed within the space charge region (SCR) to produce this electro-refractive effect. The shift in refractive index is also affected by the density and location of deep potential wells within the SCR. In addition, the microstructure change was observed by a TEM analysis. These results give an insight for future applications for the field-controlled spectrally active material systems.

Kim, Hyunjung↗

On the Moon to Stay: Challenges Presented to Power Electronics Technology by Sustained Operations on the Lunar Surface

NASA’s Artemis Program seeks not only to return humans to the Moon for the first time since the 1970’s but also to provide the technological basis for infrastructure that will enable permanent and expanding scientific and industrial exploitation of the Lunar surface. The primary purpose of this infrastructure is to generate and distribute power to a diverse and growing range of scientific and industrial assets, and the keys to success for this function are power management and control circuits that are highly reliable and maintainable for a decade of operation in the extreme thermal, radiation, and dust environment of the Lunar surface. While various combinations of wide band gap semiconductors, electronic devices, circuit topologies, and shielding schemes have been successfully developed for mission environments ranging from low Earth orbit to the Jovian system, power management technology has not been optimized to meet the full combination of mission requirements for the Lunar surface. To accomplish this, NASA requests the dedicated focus of the power electronics industry.

semiconductors↗

Imaging studies of comets

The Joint Observatory for Cometary Research's (JOCR) historical mission has been to provide understanding of large-scale interactions between bright comets and solar wind using wide-angle (Schmidt) imagery and spacecraft data; in this pursuit the JOCR has excelled. The 16 inch Newtonian/Cassegrain telescope was upgraded to permit filtered, narrow-field charge coupled device (CCD) imaging of both bright and faint comets. Thus, the goal of obtaining narrow-band imagery of the near-nuclear region of bright comets was added to JOCR's original mission with emphasis on ionization processes and total gas production. A 300 mm lens/CCD system exists with 3 degree field of view (FOV) which uses comet filters; this system bridges the gap between the wide-field (8 x 10 deg) Schmidt plates and the several-arcmin. field of the 16 inch telescope. JOCR is located under dark skies on South Baldy Mountain (el. 10,600 ft.) near Socorro, NM, and is one of the last truly dark sites in the continental U.S.

Niedner, Malcolm B., Jr.↗

Development of SiC Large Tapered Crystal Growth

Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

Neudeck, Phil↗

Space processing of electronic materials

The bulk growth of solid solution alloys of mercury telluride and cadmium telluride is discussed. These alloys are usually described by the formula Hg1-xCdxTe, and are useful for the construction of infrared detectors. The electronic energy band gap can be controlled between zero and 1.6 electron volts by adjusting the composition x. The most useful materials are at x approximately 20%, suitable for detection wavelengths of about 10 micrometers. The problems of growing large crystals are rooted in the wide phase diagram of the HgTe-CdTe pseudobinary system which leads to exaggerate segregation in freezing, constitutional supercooling, and other difficulties, and in the high vapor pressure of mercury at the growth temperatures, which leads to loss of stoichiometry and to the necessity of working in strong, pressure resistant sealed containers.

Holland, L. R.↗

Sensor Amplifier for the Venus Ground Ambient

Previous Venus Landers employed high temperature pressure vessels, with thermally protected electronics, to achieve successful missions, with a maximum surface lifetime of 127 minutes. Extending the operating range of electronic systems to the temperatures (480 C) and pressures (90 bar) of the Venus ground ambient would significantly increase the science return of future missions. Toward that end, the current work describes the innovative design of a sensor preamplifier, capable of working in the Venus ground ambient and designed using commercial components (thermionic vacuum tubes, wide band gap transistors, thick film resistors, advanced high temperature capacitors, and monometallic interfaces) To identify commercial components and electronic packaging materials that are capable of operation within the specified environment, a series of active devices, passive components, and packaging materials were screened for operability at 500C, assuming a 10x increase in the mission lifetime. In addition. component degradation as a function of time at 500(deg)C was evaluated. Based on the results of these preliminary evaluations, two amplifiers were developed.

Venus electronics↗

New room temperature high resolution solid-state detector (CdZnTe) for hard x rays and gamma rays

The new CdZnTe high 'Z' material represents a significant improvement in detectors for high energy photons. With the thicknesses available, photons up to 100 keV can be efficiently detected. This material has a wide band gap of 1.5 - 2.2 eV which allows it to operate at room temperature while providing high spectral resolution. Results of resolution evaluations are presented. This detector can be used for high resolution spectral measurements of photons in x-ray and gamma-ray astronomy, offering a significant reduction in the weight, power, and volume of the detector system compared to more conventional detector types such as scintillation counters. In addition, the detector will have the simplicity and reliability of solid-state construction. The CdZnTe detector, as a new development, has not yet been evaluated in space. The Get Away Special program can provide this opportunity.

Stewart, Amyelizabeth C.↗

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Su, Ching-Hua↗

Processing of KaRIn/SWOT Data

The Surface Water and Ocean Topography (SWOT) mission [1] is part of NASA’s Decadal Survey Program, and prepared jointly by NASA’s Jet Propulsion Laboratory (JPL), the French space agency (CNES), and the Canadian space agency (CSA). Launch is currently foreseen in 2020. The principal instrument KaRIn (Ka-band Radar Interferometer) would be a bistatic SAR system operating at Kaband, with 200 MHz bandwidth, covering 50 km wide near-nadir swaths (1-4° incidence) on both sides of the satellite track. The nominal payload also would include a conventional Ku/C-band nadir altimeter, a water vapor radiometer, and a precise orbit determination suite. Moreover, additional near-nadir channels from KaRIn to reduce the gap between the nominal swaths may be considered. The main mission goals would be to improve the spatio-temporal coverage of the oceans with respect to today’s nadir-looking altimeters (such as the Jason series), by providing measurements on a 1 km2 grid with virtually complete coverage up to ±78° latitude, while keeping a height precision of 1-2 cm, and to extend the altimetry measurements to continental water surfaces, including lakes, reservoirs and wetlands bigger than 250x250 m2 and rivers down to a width of 100 m (50 m as a goal), with a height precision of the order of 10 cm, represented with a horizontal point spacing of about 50 m. The fine scale of the measurements, with continuous acquisition over both oceans and continents, will result in huge data volumes, starting at the spacecraft and flowing through all links of the ground system. Furthermore, the centimetric height accuracy required means that all aspects of the processing must be considered carefully. In this article we give an overview of the foreseen data products and data processing chains for KaRIn on SWOT. Some particularly challenging processing steps are (will be) described in more detail.

Desroches, Damien↗

SiC Charged Particle Telescope GRC Independent Research and Development (IRAD) Program End of Project Final Report

In an advancement over the state-of-the art, NASA Glenn Research Center (GRC) has developed a large area silicon carbide (SiC)-based charged particle telescope through an Independent Research and Development (IRAD) project. The telescope has been demonstrated to have improved noise characteristics and resolution than previous SiC detectors. This improvement will meet the challenges of compact multidirectional robust radiation detector systems to study a wide range of elementary particle mass and energies. In order to provide a complete understanding of how energetic processes internal and external to the solar system shape magnetospheres, atmospheres, and surfaces, in situ particle observations should include measurements of Solar Energetic Particles (SEP) and Galactic Cosmic Rays (GCR), along with solar wind and plasma. The potential temperature stability, tolerance to high radiation environments, and low noise characteristics expected in SiC-based detectors can have advantages over the state-of-the-art silicon detectors. These advantages will allow the detectors to be deployed in small compact systems on a variety of platforms, enabling compact structures for small satellite platforms with improved data quality.

Field and particle detectors↗

The HST T tauri star SNAPshot survey

In the nearest star-forming regions, protoplanetary disks have angular sizes of only 3-4". Millimeter interferometry has generally been limited to a resolution of 1". Groundbased coronagraphic imaging of YSOs has been restricted to radii exterior to an occulting mask (r >2"), and detect nebulosity only in the most extreme dusty systems. The Hubble Space Telescope (HST) is the only observatory which can provide a spatial resolution of approx. 10 AU in combination with a stable point-spread function for high dynamic range imaging at visual wavelengths. Since the December 1993 servicing mission, only 12 nearby young stars have been observed by HST with the sensitivity needed to detect circumstellar reflection nebulosity. All six of the classical T Tauri stars observed so far have shown nebulosity; three objects are compact bipolar nebulae without an optically visible star; and the three weak-line T Tauri stars observed show no evidence for circumstellar nebulosity. Disks have been directly observed in 3 of the 12 systems studied so far: HH 30, GM Aurigae, and Haro 6-5B. A larger survey offers the prospect of many more detections, and thereby can address such fundamental questions as: What is the frequency for direct detection of disks around premain sequence stars? What is the range of disk masses and sizes? How are disks different in binary systems? Our proposal for an HST T Tauri Star SNAPshot survey was approved for 75 targets in Cycle 7. A SNAPshot survey consists of short-duration (25 minutes or less) sequences of observations which can be used to fill gaps in the HST observing schedule. This is well-matched to the needs of disk imaging, where typical T Tauri stars (11 < V < 14) saturate the WFPC2 detectors in a minute or less. Only wide-band R and I images will be taken.

Stapelfeldt, Karl↗