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Device converts wave energy into electric power through array of insulated absorber elements responsive to field of impinging electromagnetic radiation. Device could also serve as solar energy converter that is potentially less expensive and fragile than solar cells, yet substantially more efficient.
A method/system are provided for measuring the NxN scalar transfer function elements for an N-port guided wave device. Optical energy of a selected wavelength is generated at a source and directed along N reference optical paths having N reference path lengths. Each reference optical path terminates in one of N detectors such that N reference signals are produced at the N detectors. The reference signals are indicative of amplitude, phase and frequency of the optical energy carried along the N reference optical paths. The optical energy from the source is also directed to the N-ports of the guided wave device and then on to each of the N detectors such that N measurement optical paths are defined between the source and each of the N detectors. A portion of the optical energy is modified in terms of at least one of the amplitude and phase to produce N modified signals at each of the N detectors. At each of the N detectors, each of the N modified signals is combined with a corresponding one of the N reference signals to produce corresponding N combined signals at each of the N detectors. A total of N(sup 2) measurement signals are generated by the N detectors. Each of the N(sup 2) measurement signals is sampled at a wave number increment (Delta)k so that N(sup 2) sampled signals are produced. The NxN transfer function elements are generated using the N(sup 2) sampled signals. Reference and measurement path length constraints are defined such that the N combined signals at each of the N detectors are spatially separated from one another in the time domain.
This analytic investigation shows how the electromagnetic wave energy conversion (EWEC) device, as used for solar-to-electric power conversion, is significantly different from solar cells, with respect to principles of operation. An optimistic estimate of efficiency is about 80% for a full-wave rectifying configuration with solar radiation normally incident. This compares favorably with the theoretical maximum for a CdTe solar cell (23.5%), as well as with the efficiencies of more familiar cells: Si (19.5%), InP (21.5%), and GaAs (23%). Some key technological issues that must be resolved before the EWEC device can be realized are identified. Those issues include: the fabrication of a pn semi-conductor junction with no permittivity resonances in the optical band; and the efficient channeling of the power received by countless microscopic horn antennas through a relatively few number of wires.
Device will convert wind, water, tidal or wave energy into electrical or mechanical energy. Is comprised of windmill-like paddles or blades synchronously geared to orient themselves to wind direction for optimum energy extraction.
Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.
The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.
As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness </= 5 nm on a 5 micrometers x 5 micrometers area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than the crystal substrate. The film quality is determined by measuring the film resistivity, the Hall mobility, carrier densities and the energy band gap. The properties of ZnO films grown of (0001) ZnO and (0001) sapphire substrates will be also compared and discussed in the presentation.
The traveling-wave tube (TWT) is a vacuum device invented in the early 1940's used for amplification at microwave frequencies. Amplification is attained by surrendering kinetic energy from an electron beam to a radio frequency (RF) electromagnetic wave. The demand for vacuum devices has been decreased largely by the advent of solid-state devices. However, although solid state devices have replaced vacuum devices in many areas, there are still many applications such as radar, electronic countermeasures and satellite communications, that require operating characteristics such as high power (Watts to Megawatts), high frequency (below 1 GHz to over 100 GHz) and large bandwidth that only vacuum devices can provide. Vacuum devices are also deemed irreplaceable in the music industry where musicians treasure their tube-based amplifiers claiming that the solid-state and digital counterparts could never provide the same "warmth" (3). The term traveling-wave tube includes both fast-wave and slow-wave devices. This article will concentrate on slow-wave devices as the vast majority of TWTs in operation fall into this category.
The NASA Lewis Research Center is investigating the wave rotor for use as a core gas generator in future gas turbine engines. The device, which uses gas-dynamic waves to transfer energy directly to and from the working fluid through which the waves travel, consists of a series of constant-area passages that rotate about an axis. Through rotation, the ends of the passages are periodically exposed to various circumferentially arranged ports that initiate the traveling waves within the passages.
We study the performance of the D-Wave 2X quantum annealing machine on systems with well-controlled ground-state degeneracy. While obtaining the ground state of a spin-glass benchmark instance represents a difficult task, the gold standard for any optimization algorithm or machine is to sample all solutions that minimize the Hamiltonian with more or less equal probability. Our results show that while naive transverse-field quantum annealing on the D-Wave 2X device can find the ground-state energy of the problems, it is not well suited in identifying all degenerate ground-state configurations associated to a particular instance. Even worse, some states are exponentially suppressed, in agreement with previous studies on toy model problems [New J. Phys. 11, 073021 (2009)]. These results suggest that more complex driving Hamiltonians are needed in future quantum annealing machines to ensure a fair sampling of the ground-state manifold.
Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.
Device converts up-and-down motion of ocean to electrical energy. Plunging generator delivers energy to be stored in battery and used to operate remote data gathering stations. Concept may be applied to land or air use if plunging motion is supplied.
As a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.
Many of the potential space power beaming applications require the generation of directed energy beams with respectable amounts of average power (MWs). A tutorial summary is provided here on recent advances in the laboratory aimed at producing direct conversion of electrical energy to electromagnetic radiation over a wide spectral regime from microwaves to the ultraviolet.
Photons are non-interacting entities. Light beams do not interfere by themselves. Light beams constituting different laser modes (frequencies) are not capable of re-arranging their energies from extended time-domain to ultra-short time-domain by themselves without the aid of light-matter interactions with suitable intra-cavity devices. In this paper we will discuss the time-gating properties of intra-cavity "mode-locking" devices that actually help generate a regular train of high energy wave packets.
The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.
Proposed device detects infrared photons of 10- to 100-micrometer wavelength by intersubband absorption in coupled quantum wells. Based on splitting of energy level occuring when two quantum wells placed so close together wave functions of quantized energy levels overlap. Detector absorbs photons, energy which equals difference in energy between two levels resulting from split. Because degree of overlap of wave functions and, therefore, magnitude of split varied by varying width of barrier between two coupled wells, such detector, in principle, designed to operate at any desired wavelength. Restrictions on design parameters of quantum wells of proposed device less severe than single-well devices. Energy levels near tops of wells still necessary so photoexcited carriers tunnel out. Additional flexibility in design obtained by use of wells formed by barriers of different heights.
The objectives are to examine recent trends in the reduction of size, weight, and power (SWaP) requirements of sensor systems for environmental perception and to explore new technology that may overcome limitations in current systems. Improving perception systems to facilitate situation awareness is critical in the move to introduce increasing autonomy in aerial systems. Whether the autonomy is in the current state-of-the-art of increasing automation or is enabling cognitive decisions that facilitate adaptive behavior, collection of environmental information and fusion of that information into knowledge that can direct actuation is imperative to decisions resulting in appropriate behavior. Artificial sensory systems such as cameras, radar, LIDAR, and acoustic sensors have been in use on aircraft for many years but, due to the large size and weight of the airplane and electrical power made available through powerful engines, the SWaP requirements of these sensors was inconsequential. With the proliferation of Remote Piloted Vehicles (RPV), the trend is in significant reduction in SWaP of the vehicles. This requires at least an equivalent reduction in SWaP for the sensory systems. A survey of some currently available sensor systems and changing technology will reveal the trend toward reduction of SWaP of these systems and will predict future reductions. A new technology will be introduced that provides an example of a desirable new trend. A new device replaces multiple conventional sensory devices facilitating synchronization, localization, altimetry, collision avoidance, terrain mapping, and data communication in a single integrated, small form-factor, extremely lightweight, and low power device that it is practical for integration into small autonomous vehicles and can facilitate cooperative behavior. The technology is based on Ultra WideBand (UWB) radio using short pulses of energy rather than continuous sine waves. The characteristics of UWB yield several desirable characteristics to facilitate integration of perception for autonomous activities. The capabilities of this device and its limitations will be assessed.