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Results for “voltage sensing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Short Circuit Detection and Voltage Sense for High Voltage Ionization Tube Power Supplies

Fermilab's PIP-II upgrade requires new rack-mounted power supplies for Beam Loss Monitor (BLM) ionization tubes compatible with the microTCA 4.1 standard, supporting high-side current measurement for short circuit detection, voltage sense telemetry, and low-side current measurement for beam loss readout. This work presents the design and preliminary schematic of such a supply. A resistive current sensing approach was chosen over inductive, optical, and Hall-effect alternatives for its independence from cable length and component availability. A 500 mΩ inline shunt steps the 2 kV common mode voltage down to roughly 70 V, producing a ~27 μV pulse during a short, which is amplified 500x, compared against a 14-bit DAC threshold, and latched to drive a fault line. Voltage sense steps the 2 kV output down at a 1V/1000V ratio, buffers it with a low bias current amplifier, and digitizes it via a 24-bit ADC over SPI. Onboard power is regulated from 12 V down to isolated 5 V and 3.3 V rails, with capacitive isolation on FPGA communication lines. Lumped parameter models were developed for the ionization tube (0.327 nF, 20 to 200 GΩ dynamic resistance) and the RG-58 coaxial cable to support the design. Component selection is complete and a preliminary schematic has been drawn in Altium Designer, forming the foundation for future prototyping and validation.

Yu, Kellen [Cornell U.]↗
DOE OSTI2024

Coupling sensor to enzyme in the voltage sensing phosphatase

Voltage-sensing phosphatases (VSPs) dephosphorylate phosphoinositide (PIP) signaling lipids in response to membrane depolarization. VSPs possess an S4-containing voltage sensor domain (VSD), resembling that of voltage-gated cation channels, and a lipid phosphatase domain (PD). The mechanism by which voltage turns on enzyme activity is unclear. Structural analysis and modeling suggest several sites of VSD-PD interaction that could couple voltage sensing to catalysis. Voltage clamp fluorometry reveals voltage-driven rearrangements in three sites implicated earlier in enzyme activation—the VSD-PD linker, gating loop and R loop—as well as the N-terminal domain, which has not yet been explored. N-terminus mutations perturb both rearrangements in the other segments and enzyme activity. Our results provide a model for a dynamic assembly by which S4 controls the catalytic site.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2009

Battery Cell Voltage Sensing and Balancing Using Addressable Transformers

A document discusses the use of saturating transformers in a matrix arrangement to address individual cells in a high voltage battery. This arrangement is able to monitor and charge individual cells while limiting the complexity of circuitry in the battery. The arrangement has inherent galvanic isolation, low cell leakage currents, and allows a single bad cell in a battery of several hundred cells to be easily spotted.

Davies, Francis↗
NASA NTRS1984

Phase detector for three-phase power factor controller

A phase detector for the three phase power factor controller (PFC) is described. The phase detector for each phase includes an operational amplifier which senses the current phase angle for that phase by sensing the voltage across the phase thyristor. Common mode rejection is achieved by providing positive feedback between the input and output of the voltage sensing operational amplifier. this feedback preferably comprises a resistor connected between the output and input of the operational amplifier. The novelty of the invention resides in providing positive feedback such that switching of the operational amplifier is synchronized with switching of the voltage across the thyristor. The invention provides a solution to problems associated with high common mode voltage and enables use of lower cost components than would be required by other approaches.

Nola, F. J.↗
NASA NTRS2011

Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

Burns, Bradley M.↗
NASA NTRS2012

Capacitance Probe Resonator for Multichannel Electrometer

A multichannel electrometer voltmeter has been developed that employs a mechanical resonator with voltage-sensing capacitance-probe electrodes that enable high-impedance, high-voltage, radiation-hardened measurement of an Internal Electrostatic Discharge Monitor (IESDM) sensor. The IESDM is new sensor technology targeted for integration into a Space Environmental Monitor (SEM) subsystem used for the characterization and monitoring of deep dielectric charging on spacecraft. The resonator solution relies on a non-contact, voltage-sensing, sinusoidal-varying capacitor to achieve input impedances as high as 10 petaohms as determined by the resonator materials, geometries, cleanliness, and construction. The resonator is designed with one dominant mechanical degree of freedom, so it resonates as a simple harmonic oscillator and because of the linearity of the variable sense capacitor to displacement, generates a pure sinusoidal current signal for a fixed input voltage under measurement. This enables the use of an idealized phase-lock sensing scheme for optimal signal detection in the presence of noise.

Blaes, Brent R.↗
DOE OSTI2022

Membrane potential sensing: Material design and method development for single particle optical electrophysiology

We review the development of “single” nanoparticle-based inorganic and organic voltage sensors, which can eventually become a viable tool for “non-genetic optogenetics.” The voltage sensing is accomplished with optical imaging at the fast temporal response and high spatial resolutions in a large field of view. Inorganic voltage nanosensors utilize the Quantum Confined Stark Effect (QCSE) to sense local electric fields. Engineered nanoparticles achieve substantial single-particle voltage sensitivity (~2% Δλ spectral Stark shift up to ~30% ΔF/F per 160 mV) at room temperature due to enhanced charge separation. A dedicated home-built fluorescence microscope records spectrally resolved images to measure the QCSE induced spectral shift at the single-particle level. Biomaterial based surface ligands are designed and developed based on theoretical simulations. The hybrid nanobiomaterials satisfy anisotropic facet-selective coating, enabling effective compartmentalization beyond non-specific staining. Self-spiking- and patched-HEK293 cells and cortical neurons, when stained with hybrid nanobiomaterials, show clear photoluminescence intensity changes in response to membrane potential (MP) changes. Organic voltage nanosensors based on polystyrene beads and nanodisk technology utilize Fluorescence (Förster) Resonance Energy Transfer (FRET) to sense local electric fields. Voltage sensing FRET pairs achieve voltage sensitivity up to ~35% ΔF/F per 120 mV in cultures. Non-invasive MP recording from individual targeted sites (synapses and spines) with nanodisks has been realized. However, both of these QCSE- and FRET-based voltage nanosensors yet need to reach the milestone of recording individual action potentials from individual targeted sites.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS2012

Self-Nulling Lock-in Detection Electronics for Capacitance Probe Electrometer

A multi-channel electrometer voltmeter that employs self-nulling lock-in detection electronics in conjunction with a mechanical resonator with noncontact voltage sensing electrodes has been developed for space-based measurement of an Internal Electrostatic Discharge Monitor (IESDM). The IESDM is new sensor technology targeted for integration into a Space Environmental Monitor (SEM) subsystem used for the characterization and monitoring of deep dielectric charging on spacecraft. Use of an AC-coupled lock-in amplifier with closed-loop sense-signal nulling via generation of an active guard-driving feedback voltage provides the resolution, accuracy, linearity and stability needed for long-term space-based measurement of the IESDM. This implementation relies on adjusting the feedback voltage to drive the sense current received from the resonator s variable-capacitance-probe voltage transducer to approximately zero, as limited by the signal-to-noise performance of the loop electronics. The magnitude of the sense current is proportional to the difference between the input voltage being measured and the feedback voltage, which matches the input voltage when the sense current is zero. High signal-to-noise-ratio (SNR) is achieved by synchronous detection of the sense signal using the correlated reference signal derived from the oscillator circuit that drives the mechanical resonator. The magnitude of the feedback voltage, while the loop is in a settled state with essentially zero sense current, is an accurate estimate of the input voltage being measured. This technique has many beneficial attributes including immunity to drift, high linearity, high SNR from synchronous detection of a single-frequency carrier selected to avoid potentially noisy 1/f low-frequency spectrum of the signal-chain electronics, and high accuracy provided through the benefits of a driven shield encasing the capacitance- probe transducer and guarded input triaxial lead-in. Measurements obtained from a 2- channel prototype electrometer have demonstrated good accuracy (|error| < 0.2 V) and high stability. Twenty-four-hour tests have been performed with virtually no drift. Additionally, 5,500 repeated one-second measurements of 100 V input were shown to be approximately normally distributed with a standard deviation of 140 mV.

Blaes, Brent R.↗
NASA NTRS1971

Electronic ripple indicator

Electronic circuit for monitoring excessive ripple voltage on dc power lines senses voltage variations from few millivolts to maximum of 10 volts rms. Instrument is used wherever power supply fluctuations might endanger system operations or damage equipment. Device is inexpensive and easily packaged in small chassis.

Davidson, J. K.↗
NASA NTRS1974

Design, processing, and testing of LSI arrays for space station

The development of a beam-leaded low power, high performance metal-oxide-semiconductor (MOS), 256-bit random access memory (RAM) was reported. Previous success with the aluminum-gate current-sense version and a silicon-gate voltage-sense version led to the present effort to make a beam-leaded silicon-gate RAM. Some problems unique to the silicon-on-sapphire beam-lead process development are presented. Beam-leaded SOS TA5388 devices using a Si3N4 passivation layer were shown to have good electrical parameters.

Schneider, W. C.↗
NASA NTRS1974

Design, processing, and testing of LSI arrays for space station

At wafer probe, units of the TA6567 circuit, a beam leaded COS/MOS/SOS 256-bit RAM, were demonstrated to be functionally perfect. An aluminum gate current-sense version and a silicon-gate voltage-sense version of this memory were developed. Initial base line data for the beam lead SOS process using the TA5388 circuit show the stability of the dc device characteristics through the beam lead processing.

Schneider, W. C.↗
NASA NTRS1972

Design, processing, and testing of lsi arrays for space station

The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comprise computer simulations that accurately predict performance; aluminum-gate COS/MOS devices including a 256-bit RAM with current sensing; and a silicon-gate process that is being used in the construction of a 256-bit RAM with voltage sensing. The Si-gate process increases speed by reducing the overlap capacitance between gate and source-drain, thus reducing the crossover capacitance and allowing shorter interconnections. The design of a Si-gate RAM, which is pin-for-pin compatible with an RCA bulk silicon COS/MOS memory (type TA 5974), is discussed in full. The Integrated Circuit Tester (ICT) is limited to dc evaluation, but the diagnostics and data collecting are under computer control. The Silicon-on-Sapphire Memory Evaluator (SOS-ME, previously called SOS Memory Exerciser) measures power supply drain and performs a minimum number of tests to establish operation of the memory devices. The Macrodata MD-100 is a microprogrammable tester which has capabilities of extensive testing at speeds up to 5 MHz. Beam-lead technology was successfully integrated with SOS technology to make a simple device with beam leads. This device and the scribing are discussed.

Lile, W. R.↗
DOE OSTI2022

Structure of the Human BK Ion Channel in Lipid Environment

Voltage-gated and ligand-modulated ion channels play critical roles in excitable cells. To understand the interplay among voltage sensing, ligand binding, and channel opening, the structures of ion channels in various functional states and in lipid membrane environments need to be determined. Here, the random spherically constrained (RSC) single-particle cryo-EM method was employed to study human large conductance voltage- and calcium-activated potassium (hBK or hSlo1) channels reconstituted into liposomes. The hBK structure was determined at 3.5 Å resolution in the absence of Ca 2+ . Instead of the common fourfold symmetry observed in ligand-modulated ion channels, a twofold symmetry was observed in hBK in liposomes. Compared with the structure of isolated hSlo1 Ca 2+ sensing gating rings, two opposing subunits in hBK unfurled, resulting in a wider opening towards the transmembrane region of hBK. In the pore gate domain, two opposing subunits also moved downwards relative to the two other subunits.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1965

Transistor voltage comparator performs own sensing

Detection of the highest voltage input among a group of varying voltage inputs is accomplished by a transistorized voltage comparison circuit. The collector circuits of the transistors perform the sensing function. Input voltage levels are governed by the transistors.

Cliff, R. A.↗
DOE OSTI2025

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capacitor (2T-nC) FeRAMs each offer distinct trade-offs in density, scalability, and reliability. In this work, we present a comparative study of these two architectures under both dimensional scaling ( XY/Z shrinkage) and vertical integration (increasing stacked capacitors per cell). Using technology computer-aided design (TCAD) and circuit-level simulations, we analyze how scaling impacts ferroelectric capacitance, parasitic coupling, and floating-node (FN) dynamics, which together dictate sense margin (SM) and read stability. A key mitigation strategy—floating unselected capacitors—is applied to both architectures, effectively decoupling the SM from the number of stacked capacitors and enabling tractable analysis across scaling regimes. Results show that 1T-nC suffers more from charge sharing with the bitline (BL), while 2T-nC benefits from transistor isolation and stronger low-voltage sensing at the cost of increased area. By systematically evaluating these behaviors across scaling directions, this work establishes the reliability trade-offs of 1T-nC and 2T-nC cells and provides design guidelines for high-density, vertically integrated FeRAM systems.

1T-nC↗
DOE OSTI2024

Water, Protons, and the Gating of Voltage-Gated Potassium Channels

Ion channels are ubiquitous throughout all forms of life. Potassium channels are even found in viruses. Every cell must communicate with its surroundings, so all cells have them, and excitable cells, in particular, especially nerve cells, depend on the behavior of these channels. Every channel must be open at the appropriate time, and only then, so that each channel opens in response to the stimulus that tells that channel to open. One set of channels, including those in nerve cells, responds to voltage. There is a standard model for the gating of these channels that has a section of the protein moving in response to the voltage. However, there is evidence that protons are moving, rather than protein. Water is critical as part of the gating process, although it is hard to see how this works in the standard model. Here, we review the extensive evidence of the importance of the role of water and protons in gating these channels. Our principal example, but by no means the only example, will be the Kv1.2 channel. Evidence comes from the effects of D2O, from mutations in the voltage sensing domain, as well as in the linker between that domain and the gate, and at the gate itself. There is additional evidence from computations, especially quantum calculations. Structural evidence comes from X-ray studies. The hydration of ions is critical in the transfer of ions in constricted spaces, such as the gate region and the pore of a channel; we will see how the structure of the hydrated ion fits with the structure of the channel. In addition, there is macroscopic evidence from osmotic experiments and streaming current measurements. The combined evidence is discussed in the context of a model that emphasizes the role of protons and water in gating these channels.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1966

MOSFET analog memory circuit achieves long duration signal storage

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Source record↗