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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

DER Inverter Control Fault Ride Through Model in Accordance with IEEE 1547-2018 Std

Distributed Energy Resources (DER) with smart inverters are becoming more prevalent as the need for renewable energy and grid stability increases. An important challenge arises when considering that inverterbased generation methods contribute less current during faults, rendering traditional overcurrent protection unsatisfactory. DERs have fault ride-through requirements when operating in high or low voltage, outlined by IEEE Std. 1547-2018. Faults cause the voltage to reach abnormal steady state magnitudes, depending on the fault resistance and fault type. There are several high voltage and low voltage ride-through zones defined by IEEE Std. 1547-2018. Each zone’s ride through duration decreases as the applicable voltage measurement, i.e., the phase RMS voltage, deviates from its nominal value. This presentation demonstrates the implementation of IEEE Std. 1547-2018 high and low voltage ridethrough grid support functions using a preexisting RSCAD model, discussing the challenges presented during this process. The implemented controls monitor the filtered phase voltages to have a more accurate reading of the applicable voltages. The controls sense the duration that the applicable voltage remains in a specific zone. The breaker trips and ceases energization to the grid when the duration is exceeded. The standard allows the operator to adjust the ride-through times and voltage zones from the default settings. These ranges are implemented into the runtime, which acts as the operator’s SCADA. The results show the accuracy of the voltage measurements, which remain within the IEEE Std. 1547-2018 for all cases.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

A dedicated mirror-magnet experiment to study quench characteristics and dependencies in $Nb_{3}Sn$ coils and explore improvements of diagnostics capabilities

A single Nb3Sn short quadrupole coil in a mirror-magnet configuration was employed to investigate a wide range of phenomena and to serve as test-bed for diagnostics developments. A configurable array of spot-heaters was installed on the inner coil surface for control of induced quench conditions. Several different quench antenna arrays were positioned along the coil inner surface, and included significant sensor overlap for assessment of their relative efficiency and operation. Multiple acoustic sensors were placed on the pole and at coil ends. Optical fibers in grid configurations were put in different places on the coil and magnet for strain assessment, along with standard resistive strain gauges. Current spikes in the magnet circuit were monitored. This plethora of instrumentation aimed to support investigations on induced and spontaneous quenches, among other goals, and was supplemented by standard voltage-tap-based measurements. Voltage tap data of induced quenches from various spot-heater configurations was investigated for similarities to voltage development in spontaneous quenches. Quench antennas provided insights about current redistribution in the quenching coil and coil splices. The Quench Current-boosting Device was applied and the effect on coil training examined. This paper describes motivations behind the research, the overall test setup and main results.

Stoynev, Stoyan [Fermilab]↗
DOE OSTI2025

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride

In this study, we developed a new method for in situ Sb doping of CdTe thin films combining vapor transport deposition with a Group V pyrolyzer to address Sb doping concentration and doping efficiency. The Sb doped CdSeTe (CdSeTe:Sb) films were deposited in solar cell structures under variations of Sb dopant source heater, vapor pyrolyzer temperature, and Cd vapor excess. Results indicate that although these parameters do not affect the CdTe morphology or crystal structure, they critically influence doping efficiency and trap concentration. Capacitance-voltage measurements show that a higher dopant heater (TD) or pyrolyzer (TP) temperature leads to higher net carrier concentration, achieving a net carrier concentration of 1016 cm-3 and 20% doping efficiency with a TD/TP combination of 600 degrees C/1100 degrees C. By tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition, the lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell. This demonstrates a path to produce high net carrier concentration polycrystalline CdTe thin film with a low concentration of dopant-induced defects.

14 SOLAR ENERGY↗
DOE OSTI2026

Collaborative R&D with REEL Solar Inc (REEL) to Understand and Overcome Performance Limitations in CdTe Solar Cells: Cooperative Research and Development (Final Report)

This CRADA will focus on processing, advanced characterization, and testing of photovoltaic materials and devices to understand and improve REEL CdTe solar technology. This will include examining process variations and different buffer, absorber, and contact layers from REEL and NLR to maximize performance. The unique and diverse advanced characterization tools at NLR, such as time-resolved photoluminescence, capacitance-voltage measurements, electron beam scattered diffraction, cathodoluminescence, electron microscopy, TOF-SIMS, and other measurements will be applied to characterize REEL processing to improve understanding and guide experimental directions. Accelerated stability and potential induced degradation tests will be used to analyze metastability, short-and-long term degradation, and improve bankability. A second and major thrust this period will be joint development of Si/CdTe tandem solar cells to overcome industry wide terrestrial solar efficiency limits with the two lowest cost and manufacturable solar materials today. This will include developing novel transparent back contacts that can be incorporated into tandem structures and other novel solar applications, detailed analysis of designs and configurations for CdTe/Si tandem modules, and prototyping REEL CdTe Technology with Si bottom cells in tandem structures.

14 SOLAR ENERGY↗
DOE OSTI2026

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗
DOE OSTI2024

Nanosecond Transient Validation of Surge Arrester Models to Predict Electromagnetic Pulse Response

The impact of high-altitude electromagnetic pulse events on the electric grid is not fully understood, and validated modeling of mitigations, such as lightning surge arresters (LSAs) is necessary to predict the propagation of very fast transients on the grid. Experimental validation of high frequency models for surge arresters is an active area of research. Further, this article serves to experimentally validate a previously defined ZnO LSA model using four metal-oxide varistor pucks and nanosecond scale pulses to measure voltage and current responses. The SPICE circuit models of the pucks showed good predictability when compared to the measured arrester response when accounting for a testbed inductance of approximately 100 nH. Additionally, the comparatively high capacitance of low-profile arresters show a favorable response to high-speed transients that indicates the potential for effective electromagnetic pulse mitigation with future materials design.

42 ENGINEERING↗
DOE OSTI2026

Breakdown and Discharge Characteristics of High Repetition Frequency Nanosecond Pulsed Air Dielectric Barrier Discharge

This study explores the breakdown characteristics and discharge modes in a parallel plate air dielectric barrier discharge system using repetitive nanosecond pulses, with pulse repetition frequencies (PRFs) from 0.1 to 100 kHz. It examines how pulse parameters—PRF, pulse number and gas pressure—affect the memory effect, leveraging current and voltage measurements, fast imaging and optical emission spectroscopy. The findings show that higher PRFs lead to a reduction in breakdown voltage well below the streamer breakdown threshold. We argue that this effect may be attributed to the cumulative buildup of metastable species and negative ions in the discharge gap which could sustain free electrons in‐between the voltage pulses. Despite observing increased energy deposition with higher PRFs, the impact on filament formation was minimal, highlighting a strong dependence of discharge morphology on the accumulation of plasma‐produced species. This research studies provides valuable insights for controlling discharge regimes in applications such as plasma‐assisted combustion, surface treatment and air treatment by clarifying the interactions between discharge mechanisms at different PRFs and pressures.

42 ENGINEERING↗
DOE OSTI2024

Reducing the Barrier Height in Organic Transistors

Abstract Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom‐contact top‐gate organic transistors is demonstrated by adding 1 nm thick atomic layer deposited Al 2 O 3 on the source and drain contacts. By using two different donor‐acceptor copolymers, both p‐ and n‐ type transistors are investigated. Temperature‐dependent current–voltage measurements from non‐treated, self‐assembled monolayer treated, and Al 2 O 3 treated Au source‐drain contact field‐effect transistors with varying channel lengths are carried out. The drain current versus drain voltage near zero gate voltage, which may be described by the thermionic emission model at temperatures above 150 K, allows the estimation of the Schottky barrier height ( φ B ). The Al 2 O 3 contact‐treated transistors show more than 40% lower φ B compared with the non‐treated contacts in the p ‐type transistor. Similarly, an isoindigo‐based transistor, with n ‐type transport, shows a reduction in φ B with Al 2 O 3 treated contacts suggesting that such ultrathin oxide layers provide a universal method for reducing the barrier height.

Ghobadi, Arash↗
DOE OSTI2025

Thermal Performance of a Conduction-Cooled CCT Dipole ReBCO Magnet: Several Cycles of Cool-Down and Thermal Gradient Measurements

Here, this paper presents experimental results from conduction-cooled thermal testing of a ReBCO canted cosine theta (CCT) magnet (C2), originally designed and fabricated at LBNL using CORC cables. While the performance of the coil under liquid helium and nitrogen environments has been previously established, this study explores its behavior under conduction cooling using a large test cryostat at The Ohio State University. The magnet, measuring 613 mm in length and weighing ∼75 kg, consists of four helical layers wound with ReBCO-based CORC wire and was thermally anchored to a copper cold ring supported by a G-10 strongback. Cooling was provided by two Sumitomo RDK-415D cryocoolers, offering a combined 3 W at 4.2 K and 150 W at 77 K. Multiple thermal cycles were performed, with cooldown durations of up to 45 hours. Final base temperatures of approximately 10.8 K (at the coil edge) and 12.0 K (at the coil center) were achieved, with an axial temperature difference of approximately 1.2 K. The warm-up period extended over approximately 24.6 hours. Voltage measurements from all four layers were recorded during cooldown and warmup. The system demonstrated stable cooldown performance, repeatable gradients, and good thermal anchoring. These results support the feasibility of conduction cooling in large-scale HTS magnets, aligning with broader goals for “green” cryogen-free accelerator technologies and paving the way for more sustainable, scalable, and energy-efficient high-field magnet systems in next-generation particle accelerators.

Canted cosine theta magnets↗
DOE OSTI2025

Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc 2 Te 4 With Magnetism‐Driven Nonlinear Transport

Magnetic topological materials have recently emerged as a promising platform for studying quantum geometry by the nonlinear transport in thin film devices. In this work, an antiferromagnetic (AFM) semiconductor EuSc₂Te₄ as the first bulk crystal that exhibits quantum geometry-driven nonlinear transport is reported. This material crystallizes into an orthorhombic lattice with AFM order below 5.2 K and a bandgap of less than 50 meV. The calculated band structure aligns with the angle-resolved photoemission spectroscopy spectrum. The AFM order preserves combined space-time inversion symmetry but breaks both spatial inversion and time-reversal symmetry, leading to the nonlinear Hall effect (NLHE). Nonlinear Hall voltage measured in bulk crystals appears at zero field, peaks near the spin-flop transition as the field increases, and then diminishes as the spin moments align into a ferromagnetic order. This field dependence, along with the scaling analysis of the nonlinear Hall conductivity, suggests that the NLHE of EuSc₂Te₄ involves contributions from quantum metric, in addition to extrinsic contributions, such as spin scattering and junction effects. Furthermore, this NLHE is found to have the functionality of broadband frequency mixing, indicating its potential applications in electronics. This work reveals a new avenue for studying magnetism-induced nonlinear transport in magnetic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Evidence of Superconductivity in Electrical Resistance Measurements of Hydrides Under High Pressure

In the standard van der Pauw four-probe configuration commonly used for electrical resistance measurements, including those of hydrogen-rich samples at high pressures, the application of electrical current through one pair of leads while measuring voltage difference across another pair is a fundamental practice (see the inset in Fig. 1c). In the scenario described in Ref. [5], where electrical resistance vanishes due to disconnection between current and voltage probes or due to an onset of giant magnetoresistance in parts of the sample, it is crucial to consider the implications across different probe orientations: while one orientation may indeed result in vanishing electrical resistance, a divergence of the electrical resistance towards infinity will be observed in an alternative orientation where the applied current pattern is rotated a quarter turn (see the scheme on the inset in Fig. 1c). It is imperative to acknowledge that experimental data encompassing all possible probe orientations are essential for eliminating artifacts and assessing sample homogeneity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Deciphering coulombic loss in lithium-ion batteries and beyond

Lithium-ion batteries are pivotal for modern energy storage, yet accurately predicting their lifespan remains a critical challenge. While descriptors like coulombic efficiency are widely used to assess battery longevity, the unclear physical origins of coulombic losses cause semi-quantitative correlation with capacity, complicating battery development. Here, we combine high-precision leakage current and open-circuit-voltage measurements with charge conservation principles to explore microscopic charge consumptions at electrode-electrolyte interfaces across diverse chemistries. We demonstrate that coulombic loss arises from a synergy between local charge neutrality and global charge compensation, reconciling its quantitative correlation to capacity. Contrary to conventional assumptions equating coulombic loss with irreversible capacity loss, this framework resolves systematic overestimations and paradoxical phenomena in existing chemistries. Our findings establish physics-informed criteria for accelerated lifespan evaluation and guide rational design of long-life lithium-ion batteries and beyond.

Batteries↗
DOE OSTI2025

Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×

36 MATERIALS SCIENCE↗
DOE OSTI2025

Origin of proton irradiation-induced deep acceptors in Al 0.70 Ga 0.30 N

Deep level defect introduction and carrier removal were characterized using steady-state photocapacitance (SSPC), deep level transient spectroscopy (DLTS) and lighted capacitance–voltage for proton irradiated n-type Al 0.70 Ga 0.30 N Schottky diodes grown by metal-organic vapor phase epitaxy on AlN-on-sapphire templates. SSPC observed deep levels in the as-grown diode with zero-phonon transition energies of 2.20, 2.65, 3.10, 3.40, and 4.65 eV relative to the conduction band minimum (E c ), and an additional deep level emerged at 1.20 eV with irradiation. Lighted capacitance–voltage measurements quantified the deep level concentration (N t ) of states detected by SSPC, and it was observed that N t increased with proton fluence only for the 1.2 and 4.65 eV levels. Carrier removal was much larger than the increase in N t of the 1.2 and 4.65 eV deep levels, suggesting that radiation-induced deep level compensators existed beyond what was detected with SSPC. DLTS detected additional, proton-induced deep acceptors at E c —0.55, 0.82, and 1.16 eV, the latter of which is likely the same 1.20 eV deep state observed by SSPC. The concentration of the E c —0.82 eV defect state was large enough to reconcile carrier removal with total deep level introduction. Comparing the E c —0.82 and 1.16 eV deep acceptor levels to previous experimental and theoretical reports suggests that their atomistic origins could be the nitrogen vacancy (V N ) and oxygen substituting on the nitrogen sub-lattice (O N ), respectively. This defect behavior contrasts starkly with GaN, where V N and O N are shallow donors, and demonstrates that the electronic properties of defects can evolve drastically within the AlGaN alloy system ranging from wide bandgap GaN to ultra-wide bandgap AlN.

Armstrong, Andrew Michael [Sandia National Laborat↗
DOE OSTI2026

Comparative study on the formation of Cr and Ti ohmic contacts to (001) β -Ga 2 O 3

Here, a comparative study of Cr/Au and Ti/Au ohmic contacts on (001) β-Ga 2 O 3 was conducted. The electrical behavior from current-voltage measurements and the interfacial composition and microstructure as determined from high-resolution transmission electron microscopy (TEM) with energy dispersive x-ray analysis were compared for the different contacts at selected points in an annealing series (300–700 °C, 1 min. anneals in N 2 ). Cr/Au contacts became ohmic at temperatures (300–350 °C) approximately 50–100 °C lower than Ti/Au contacts (400–450 °C). Cr/Au and Ti/Au contacts demonstrated optimal ohmic behavior (lowest resistance) when annealed to 450–500 and 500–600 °C, respectively, with Ti/Au contacts yielding a lower total resistance than Cr/Au. Cross-sectional TEM images of Cr/Au contacts annealed at 450 °C revealed the presence of Au nanoclusters at the Ga 2 O 3 interface and CrO x layers at both the top of the contact and the Ga 2 O 3 interface. Whereas TiO x also formed at the top and bottom interfaces in 450 °C-annealed Ti/Au contacts, the TiO x surface layer appeared to be variable in thickness and/or discontinuous, unlike the CrO x surface layer. Au nanoclusters were not detected at the interface in the Ti/Au contacts. The interdiffusion and oxidation observed in both contact metallizations point to the need for diffusion barriers that may allow these contacts to be used in future Ga 2 O 3 -based devices that operate at elevated temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Automated Calibration System for Beam Current Monitor

The Beam Current Monitor (BCM) measures the instantaneous current in a beam. This work aims to develop an automated calibration system for the BCM to address the need for calibration without interrupting beam operation. We strive to create a synchronous calibration method integrated into the master timeline by utilizing the pulsed nature of synchrotrons to run calibration pulses during inter-pulse gaps. This improvement should enhance operational efficiency, ensure safe operation, and help mitigate beam loss, all by enabling intermittent calibration during the operation of the accelerator. This is accomplished by developing a Python program that interfaces with a Keithley 6221 DC and AC source and a Keithley 2182A Nanovoltmeter. The program configures both of these devices to perform a selected mode of the current sweep, allows for the initiation of the current sweep, collects the measured voltage data from the 2182A, stores the collected data to the computer in a CSV file, and graphs the collected data.

Haller, James↗
DOE OSTI2025

Tool Chain for Simulations of Bi-Filar Coil Winding for Fast Quench Protection

The advancement of high-field magnets utilizing high-temperature superconductors (HTS) brings about complex challenges, especially in quench detection and protection. Traditional methods often fall short due to the inherently slow quench propagation in HTS materials. One promising approach to overcome this involves using a bifilar winding configuration, where two conductors are placed side by side. Under normal operation, they function in series, but during a quench event, they switch to an anti-parallel mode. This shift reduces the differential inductance of the coil to near zero, enabling rapid current oscillations through a capacitor discharge. The resulting high-frequency current flow leads to swift, uniform heating, triggering a full-coil quench within microseconds. Moreover, the strong mutual coupling between the two windings significantly reduces electrical noise in voltage measurements. In this work, we explore the viability of this concept by designing, constructing, and testing a REBCO bifilar racetrack coil in liquid nitrogen. We also present a validated simulation model that closely mirrors the coil's dynamic behavior under these conditions, aligning well with experimental observations.

Jayathilaka, Rehan [Northern Illinois U.]↗
DOE OSTI2024

Trust-Based Detection and Mitigation of Cyber Attacks in Distributed Cooperative Control of Islanded AC Microgrids

In this study, we address the challenge of detecting and mitigating cyber attacks in the distributed cooperative control of islanded AC microgrids, with a particular focus on detecting False Data Injection Attacks (FDIAs), a significant threat to the Smart Grid (SG). The SG integrates traditional power systems with communication networks, creating a complex system with numerous vulnerable links, making it a prime target for cyber attacks. These attacks can lead to the disclosure of private data, control network failures, and even blackouts. Unlike machine learning-based approaches that require extensive datasets and mathematical models dependent on accurate system modeling, our method is free from such dependencies. To enhance the microgrid’s resilience against these threats, we propose a resilient control algorithm by introducing a novel trustworthiness parameter into the traditional cooperative control algorithm. Our method evaluates the trustworthiness of distributed energy resources (DERs) based on their voltage measurements and exchanged information, using Kullback-Leibler (KL) divergence to dynamically adjust control actions. We validated our approach through simulations on both the IEEE-34 bus feeder system with eight DERs and a larger microgrid with twenty-two DERs. The results demonstrated a detection accuracy of around 100%, with millisecond range mitigation time, ensuring rapid system recovery. Additionally, our method improved system stability by up to almost 100% under attack scenarios, showcasing its effectiveness in promptly detecting attacks and maintaining system resilience. These findings highlight the potential of our approach to enhance the security and stability of microgrid systems in the face of cyber threats.

Computer Science↗