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Here, perovskite and organic semiconductors can be combined to make tandem solar cells but, to date, their efficiency has hovered around 20%. Now, researchers demonstrate a 23.6% tandem by reducing interfacial defects to improve the perovskite cell's voltage and developing an ultrathin interconnection layer.
A program was conducted to develop technologies for welding interconnects to three types of 50-micron-thick, 2 by 2-cm solar cells. Parallel-gap resistance welding was used for interconnect attachment. Weld schedules were independently developed for each of the three cell types and were coincidentally identical. Six 48-cell modules were assembled with 50-micron (nominal) thick cells, frosted fused-silica covers, silver-plated Invar interconnectors, and four different substrate designs. Three modules (one for each cell type) have single-layer Kapton (50-micron-thick) substrates. The other three modules each have a different substrate (Kapton-Kevlar-Kapton, Kapton-graphite-Kapton, and Kapton-graphite-aluminum honeycomb-graphite). All six modules were subjected to 4112 thermal cycles from -175 to 65 C (corresponding to over 40 years of simulated geosynchronous orbit thermal cycling) and experienced only negligible electrical degradation (1.1 percent average of six 48-cell modules).
In this study, we demonstrate a quasi van der Waals epitaxy approach to prepare single crystalline Ru ultrathin film on large scale, monolayer graphene. Physical and epitaxial properties of bulk, near surface and surface of ultrathin Ru films were comprehensively studied using various structural, morphological, compositional, and electrical characterization techniques. Here, we confirm that Ru can epitaxially grow on single, monolayer graphene using magnetron sputtering at elevated temperature of 600 °C. The epitaxial Ru films with film thickness ranging from 94.2 nm down to 3.9 nm show the (0001) out-of-plane orientation. The epitaxial relationships between Ru and graphene are out-of-plane Ru(0001) || graphene(0001) and in-plane Ru[$11\bar20$] || graphene[$11\bar20$]. All the Ru films show smooth surfaces with root-mean-square roughness less than 0.8 nm and have negligible oxide layer on the surfaces. The Ru films on graphene demonstrate significantly reduced electrical resistivity comparing to their counterpart grown on bare SiO 2 , which show polycrystalline nature. For 7.1 to 3.9 nm film thicknesses, the resistivity of Ru on graphene shows 38 to 45% resistivity decrease from that of Ru film on bare SiO 2 without graphene. Our observations suggest the existence of the above-classical van der Waals interaction between Ru and graphene. On the other hand, graphene is capable of effectively blocking the inter-diffusion/interaction between Ru and SiO 2 during a 1000 °C annealing process.