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Results for “ultra-low power switching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sources NASA NTRS DOE OSTI

DOE OSTI2025

Near-field infrared imaging of polar domain walls in Ni 3 TeO 6

Domain walls are leading platforms for the development of ultra-low power switching and memory devices due to their potential to be moved, created, and erased in real time and to mitigate heat flux. Interface vs wavelength size effects unfortunately preclude the measurement of phonons by traditional spectroscopic techniques, so it has been challenging to unravel the primary excitations of the lattice and the symmetries that they represent across these functional interfaces. In this work, we employ synchrotron-based near-field infrared nanospectroscopy to image polar domain walls in multiferroic Ni 3 TeO 6 . This is a unique platform because, in addition to hosting polar and chiral domains that are interlocked with one another, Ni 3 TeO 6 displays both charged and neutral interfaces depending upon the direction allowing the development of structure–property relations. From a local structure and a strain point of view, we find charged walls that are twice as wide as neutral walls as well as strong frequency shifts of vibrational modes across the charged walls. The near-field amplitude drops across the walls as well. We discuss these trends in terms of polarization and chirality as well as phonon lifetimes at functional interfaces.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis

Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. Here, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ~15 nm thick ultraporous (pore size ~5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al 2 O 3 system, that the ultraporous films result in ultrahigh on/off ratio (>10 9 ) at ultralow switching voltages (~±600 mV) that are 10× smaller than those for the bulk case. In addition, the devices demonstrate fast switching, pulsed endurance up to 1 million cycles. and high temperature (125 °C) retention up to 10 4 s, making this approach highly promising for large-scale neuromorphic and memory applications. Additionally, this synthesis methodology provides a compatible, inexpensive route that is scalable and compatible with existing semiconductor nanofabrication methods and materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗

NASA NTRS2012

Reliability Considerations of ULP Scaled CMOS in Spacecraft Systems

NASA, the aerospace community, and other high reliability (hi-rel) users of advanced microelectronic products face many challenges as technology continues to scale into the deep sub-micron region. Decreasing the feature size of CMOS devices not only allows more components to be placed on a single chip, but it increases performance by allowing faster switching (or clock) speeds with reduced power compared to larger scaled devices. Higher performance, and lower operating and stand-by power characteristics of Ultra-Low Power (ULP) microelectronics are not only desirable, but also necessary to meet low power consumption design goals of critical spacecraft systems. The integration of these components in such systems, however, must be balanced with the overall risk tolerance of the project.

reliability↗

DOE OSTI2025

Ultra-Fast Non-Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Low-current multilevel programmability with inherent non-volatility and high stability of resistance states is required for both multi-bit memory storage and deep learning accelerators but is difficult to achieve. Here, in a resistive switching system, this work realizes >512 (>9 bits) distinct non-volatile conductance levels with stable retention for each state with current levels down to the nanoampere range, highly promising for potential integration with small processing nodes with ultra-low power consumption requirements. This is achieved by demonstrating a new thin film design concept that encompasses three key features: an ultra-thin epitaxial oxygen ionic switching layer that provides a tunable energy barrier at the bottom electrode, an overcoat amorphous layer that acts as an ion migration barrier for stable state retention, and a partial conductive filament as a localized electronic transport channel to the epitaxial switching layer. A large dynamic resistance range of up to seven orders of magnitude is achieved with reset-free transitions among intermediate states, and programmability is demonstrated with ultra-fast (20 ns) pulses. Artificial neural network (ANN) simulations, based on the experimental performance and its non-idealities, demonstrate close-to-ideal inference accuracies for various Modified National Institute of Standards and Technology (MNIST) data sets.

36 MATERIALS SCIENCE↗

DOE OSTI2022

A 194nW Energy-Performance-Aware loT SoC Employing a 5.2nW 92.6% Peak Efficiency Power Management Unit for System Performance Scaling, Fast DVFS and Energy Minimization

A self-powered IoT system-on-chip (SoC) reduces power to sub-μw and employs multiple power-management techniques to trade-off ultra-low power (ULP), higher performance, smaller energy harvester footprint, and longer operating lifetime. Minimum Energy Point Tracking (MEPT) [1]–[4] keeps an SoC operating at the minimum energy point (MEP) to enhance system lifetime. Previous sample-and-hold MEPT schemes need frequent voltage comparisons and a high-frequency clock that increases power [2]. Current-ratio-based MEPT relies on specialized CMOS technology for body-bias tuning [3]. A switched-capacitor-based MEPT can achieve energy minimization at a targeted performance [4], but it uses a 30MHz clock witμW power consumption and low power efficiency. For ULP IoT applications, SoCs need to have ultra-low quiescent power, high efficiency for energy delivery, performance scaling based on available energy, and energy minimization to increase system lifetime. In this work, we propose an ULP IoT SoC with a triple-mode power management unit (PMU) that integrates energy-performance scaling, event-driven fast DVFS, and MEPT features to improve the system energy efficiency, as shown in Fig. 13.8.1. This work achieves a minimum 194nW power consumption for the SoC and 5.2nW quiescent power for the PMU with a 92.6% peak efficiency and >10 4 dynamic range. The timing waveform in Fig. 13.8.1 (bottom), demonstrates the transition of the three modes including energy aware (EA), performance aware (PA), and MEPT based on event priority and input voltage level which reflects the energy availability. As such, the system energy consumption and performance could be well-balanced based on both the input and output conditions.

self-powered IoT system-on-chip (SoC)↗

DOE OSTI2024

Post-processing of phase change material in a zero-change commercial silicon photonic process

Integration of phase change material (PCM) with photonic integrated circuits can transform large-scale photonic systems by providing non-volatile control over phase and amplitude. The next generation of commercial silicon photonic processes can benefit from the addition of PCM to enable ultra-low power, highly reconfigurable, and compact photonic integrated circuits for large-scale applications. Despite all the advantages of PCM-based photonics, today’s commercial foundries do not provide them in their silicon photonic processes yet. We demonstrate the first-ever electrically programmable PCM device that is monolithically post-processed in a commercial foundry silicon photonics process using a few fabrication steps and coarse-resolution photolithography. These devices achieved 1.4 dB/μm of amplitude switching contrast using a thin layer of 12.5 nm GeSbTe in this work. We have also characterized the reconfiguration speed as well as repeatability of these devices over 20,000 switching cycles. Our solution enables non-volatile photonic VLSI systems that can be fabricated at low cost and high reliability in a commercial foundry process, paving the way for the development of non-volatile programmable photonic integrated circuits for a variety of emerging applications.

Optics↗

NASA NTRS2013

NASA Tech Briefs, April 2013

Topics covered include: Fully Integrated, Miniature, High-Frequency Flow Probe Utilizing MEMS Leadless SOI Technology; Nanoscale Surface Plasmonics Sensor With Nanofluidic Control; Advanced Dispersed Fringe Sensing Algorithm for Coarse Phasing Segmented Mirror Telescopes; Neural Network Back-Propagation Algorithm for Sensing Hypergols; Bulk Moisture and Salinity Sensor; Change-Based Satellite Monitoring Using Broad Coverage and Targetable Sensing; Circularly Polarized Microwave Antenna Element with Very Low Off-Axis Cross-Polarization; Ultra-Low Heat-Leak, High-Temperature Superconducting Current Leads for Space Applications; Flash Cracking Reactor for Waste Plastic Processing; An Automated Safe-to-Mate (ASTM) Tester; Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch; Compute Element and Interface Box for the Hazard Detection System; DOT Transmit Module; Composite Aerogel Multifoil Protective Shielding; Li-Ion Electrolytes with Improved Safety and Tolerance to High-Voltage Systems; Polymer-Reinforced, Non-Brittle, Lightweight Cryogenic Insulation; Controlled, Site-Specific Functionalization of Carbon Nanotubes with Diazonium Salts; Regenerable Sorbent for CO2 Removal; Sprayable Aerogel Bead Compositions With High Shear Flow Resistance and High Thermal Insulation Value; Lexan Linear Shaped Charge Holder with Magnets and Backing Plate; Robotic Ankle for Omnidirectional Rock Anchors; Wind, Wave, and Tidal Energy Without Power Conditioning; An Active Heater Control Concept to Meet IXO Type Mirror Module Thermal-Structural Distortion Requirement; Waterless Clothes-Cleaning Machine; Integrated Electrical Wire Insulation Repair System; LVGEMS Time-of-Flight Mass Spectrometry on Satellites; Surface Inspection Tool for Optical Detection of Surface Defects; Per-Pixel, Dual-Counter Scheme for Optical Communications; Certification-Based Process Analysis; Surface Navigation Using Optimized Waypoints and Particle Swarm Optimization; Smart-Divert Powered Descent Guidance to Avoid the Backshell Landing Dispersion Ellipse; Estimating Foreign-Object-Debris Density from Photogrammetry Data; Adaptive Sampling of Spatiotemporal Phenomena with Optimization Criteria; Building a 2.5D Digital Elevation Model From 2D Imagery; Eyes on the Earth 3D; Target Trailing With Safe Navigation for Maritime Autonomous Surface Vehicles; Adams-Based Rover Terramechanics and Mobility Simulator - ARTEMIS; ISTP CDF Skeleton Editor; Uplink Summary Generator (ULSGEN) Version 1.0; Robotics On-Board Trainer (ROBoT); Software Engineering Tools for Scientific Models; Automatic Data Filter Customization Using a Genetic Algorithm; Tracker Toolkit; Towards Efficient Scientific Data Management Using Cloud Storage; On a Formal Tool for Reasoning About Flight Software Cost Analysis; A Nanostructured Composites Thermal Switch Controls Internal and External Short Circuit in Lithium Ion Batteries; Spacecraft Crew Cabin Condensation Control; and Functional Near-Infrared Spectroscopy Signals Measure Neuronal Activity in the Cortex.

Source record↗

DOE OSTI2022

Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation

Abstract The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS 2 transistors back-gated by single-layer polycrystalline PbZr 0.35 Ti 0.65 O 3 . The devices exhibit current switching ratios up to 8 × 10 6 within an ultra-low gate voltage window of $$V_{{{\mathrm{g}}}} = \pm \! 0.5$$ V g = ± 0.5 V and subthreshold swing (SS) as low as 9.7 mV decade −1 at room temperature, transcending the 60 mV decade −1 Boltzmann limit without involving additional dielectric layers. Theoretical modeling reveals the dominant role of the metastable polar states within domain walls in enabling the NC mode, which is corroborated by the relation between SS and domain wall density. Our findings shed light on a hysteresis-free mechanism for NC operation, providing a simple yet effective material strategy for developing low-power 2D nanoelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2023

2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness

We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga 2 O 3 . The device features 1.8 μm wide, 2×10 17 cm -3 doped n-Ga 2 O 3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefited from the high doping in Ga 2 O 3 , the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (R ON,SP ) of 0.7 mΩ•cm 2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The R ON,SP ~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 °C. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices.

Qin, Yuan↗