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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Effect of interfacial structures on spin dependent tunneling in epitaxial L1{sub 0}-FePt/MgO/FePt perpendicular magnetic tunnel junctions

Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L1{sub 0}-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Hydrogen Tunneling in Enzymes and Biomimetic Models

Hydrogen transfer reactions play an important role throughout chemistry and biology. In general, hydrogen transfer reactions encompass proton and hydride transfer, which are associated with the transfer of a positively or negatively charged species, respectively, and proton-coupled electron transfer (PCET), which corresponds to the net transfer of one electron and one proton in the simplest case. Such PCET reactions can occur by either a sequential mechanism, in which the proton or electron transfers first, or a concerted mechanism, in which the electron and proton transfer in a single kinetic step with no stable intermediate. Furthermore, concerted PCET reactions can be subdivided into hydrogen atom transfer (HAT), which corresponds to the transfer of an electron and proton between the same donor and acceptor (i.e., the transfer of a predominantly neutral species), and electron-proton transfer (EPT), which corresponds to the transfer of an electron and proton between different donors and acceptors, possibly even in different directions. In all of these types of hydrogen transfer reactions, hydrogen tunneling could potentially play a significant role. The biomimetic portion was supported as part of the Center for Molecular Electrocatalysis, an Energy Frontier Research Center funded by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences.

Layfield, Joshua P.↗
DOE OSTI2017

Tunnel Structured α-MnO 2 with Different Tunnel Cations (H + , K + , Ag + ) as Cathode Materials in Rechargeable Lithium Batteries: The Role of Tunnel Cation on Electrochemistry

α-MnO 2 type manganese dioxide is an interesting prospective cathode material for reversible lithium insertion owing to its cation accessible tunnels (0.46nm x 0.46nm), high voltage, and low cost. The tunneled structure is synthetically formed by the assistance of cations acting as structure directing agents where the cations may remain in the tunnel. The electrochemistry of this family of materials is strongly dependent on the morphological and physicochemical (i.e. surface area, crystallite size, and average manganese oxidation state) properties as well as tunnel occupancy. For this work, we prepared a set of materials Mn 8 O 16 ·0.81H 2 O, K 0.81 Mn 8 O 16 ·0.78H 2 O and Ag 1.33 Mn 8 O 16 ·0.95H 2 O with similar nanorod morphology, crystallite size, surface area, and tunnel water content. This set of samples allowed us to investigate the role of tunnel cations in the electrochemistry of α-MnO 2 type manganese dioxide in a lithium based environment while minimizing the effects of the other parameters. The electrochemistry was evaluated using cyclic voltammetry, galvanostatic cycling, rate capability, and galvanostatic intermittent titration type testing. Mn 8 O 16 ·0.81H 2 O showed higher loaded voltages, improved capacity retention, and higher specific energy relative to K 0.81 Mn 8 O 16 ·0.78H 2 O and Ag 1.33 Mn 8 O 16 ·0.95H 2 O. After 100 cycles, Mn 8 O 16 ·0.81H 2 O delivered ~200% more capacity than Ag 1.33 Mn 8 O 16 ·0.95H 2 O (64 vs. 129 mAh/g) and ~35% more capacity than K 0.81 Mn 8 O 16 ·0.78H 2 O (85 vs. 129 mAh/g). Mn 8 O 16 ·0.81H 2 O also showed higher effective lithium diffusion coefficients (DLi+) and higher rate capability compared to K 0.81 Mn 8 O 16 ·0.78H 2 O and Ag 1.33 Mn 8 O 16 ·0.95H 2 O suggesting faster Li+ ion diffusion in the absence of large metal tunnel cations.

25 ENERGY STORAGE↗
DOE OSTI2014

Effect of annealing on the temperature dependence of inelastic tunneling contributions vis-à-vis tunneling magnetoresistance and barrier parameters in CoFe/MgO/NiFe magnetic tunnel junctions

The effect of annealing on the changes in the inelastic tunneling contributions in tunneling conductance of ion beam sputtered CoFe/MgO/NiFe magnetic tunnel junctions (MTJs) is investigated. The inelastic contributions are evaluated using hopping conduction model of Glazman and Matveev in the temperature range of 25–300 K. The hopping through number of series of localized states present in the barrier due to structural defects increases from 9 (in as deposited MTJ) to 18 after annealing (at 200 °C/1 h); although no changes in the interface roughness of CoFe-MgO and MgO-NiFe interfaces are observed as revealed by the x-ray reflectance studies on planar MTJs. The bias dependence of tunneling magnetoresistance (TMR) at 25 K is found to get improved after annealing as revealed by the value V{sub 1/2} (the bias value at which the TMR reaches to half of its value at nearly zero bias); which is 78 mV (in MTJ annealed at 200 °C/1 h) 2.5 times the value of 33 mV (in as deposited MTJ). At 25 K the inelastic tunneling spectra revealed the presence of zero bias anomaly and magnon excitations in the range of 10–15 mV. While the barrier height exhibited a strong temperature dependence with nearly 100% increase from the value at 300 K to 25 K, the temperature dependence of TMR becomes steep after annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2017

Validation of a Compact Isokinetic Total Water Content Probe for Wind Tunnel Characterization at NASA Glenn Icing Research Tunnel and at NRC Ice Crystal Tunnel

A new compact isokinetic probe to measure total water content in a wind tunnel environment has been developed. The probe has been previously tested under altitude conditions. This paper presents a comprehensive validation of the probe under a range of liquid water conditions at sea level in the NASA Glenn Icing Research Tunnel and with ice crystals at sea level at the NRC wind tunnel. The compact isokinetic probe is compared to tunnel calibrations and other probes.

meterological instruments↗
DOE OSTI2024

Wind Farm Wakes and Farm-to-Farm Interactions: Lidar and Wind Tunnel Tests

Recent experimental and numerical evidence has shown that the cumulative wake generated from the overlapping of multiple wakes within a wind farm could reduce power performance and enhance fatigue loads of wind turbines installed in neighboring downstream wind farms and may also extend up to distances one order of magnitude larger than those typically considered for intra-farm wake interactions. Similar to individual wind turbine wakes, wind farm wakes have a velocity deficit and added turbulence intensity, both affected by the turbine rotor thrust forces and the incoming turbulence intensity. Therefore, the evolution of wind farm wakes will vary for different operational and atmospheric conditions. In this paper, lidar measurements collected during the American WAKE experimeNt (AWAKEN) and wind tunnel tests of wind farms reproduced by porous disks are leveraged to investigate wind farm wakes.

17 WIND ENERGY↗
DOE OSTI2017

Rechargeable Aluminum-Ion Batteries Based on an Open-Tunnel Framework

Rechargeable batteries based on an abundant metal such as aluminum with a three-electron transfer per atom are promising for large-scale electrochemical energy storage. Aluminum can be handled in air, thus offering superior safety, easy fabrication, and low cost. But, the development of Al-ion batteries has been challenging due to the difficulties in identifying suitable cathode materials. This study presents the use of a highly open framework Mo 2.5 + y VO 9 + z as a cathode for Al-ion batteries. The open-tunnel oxide allows a facile diffusion of the guest species and provides sufficient redox centers to help redistribute the charge within the local host lattice during the multivalent-ion insertion, thus leading to good rate capability with a specific capacity among the highest reported in the literature for Al-based batteries. Our study also presents the use of Mo 2.5 + y VO 9 + z as a model host to develop a novel ultrafast technique for chemical insertion of Al ions into host structures. The microwave-assisted method employing diethylene glycol and aluminum diacetate (Al(OH)(C 2 H 3 O 2 ) 2 ) can be performed in air in as little as 30 min, which is far superior to the traditional chemical insertion techniques involving moisture-sensitive organometallic reagents. The Al-inserted Al x Mo 2.5 + y VO 9 + z obtained by the microwave-assisted chemical insertion can be used in Al-based rechargeable batteries.

25 ENERGY STORAGE↗
DOE OSTI2015

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO{sub 3}/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3}/La{sub 0.5}Ca{sub 0.5}MnO{sub 3} /La{sub 0.7}Sr{sub 0.3}MnO{sub 3} MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO{sub 3} is ferroelectric and La{sub 0.5}Ca{sub 0.5}MnO{sub 3} is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $$\delta$$-layer tunnel junctions

Abstract The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $$\delta$$ δ layer-based devices, facilitating the exploration of new concepts in classical and quantum computing. Recently, it has been shown that two distinct conductivity regimes (low- and high-bias regimes) exist in $$\delta$$ δ -layer tunnel junctions due to the presence of quasi-discrete and continuous states in the conduction band of $$\delta$$ δ -layer systems. Furthermore, discrete charged impurities in the tunnel junction region significantly influence the tunneling rates in $$\delta$$ δ -layer tunnel junctions. Here we demonstrate that electrical dipoles, i.e. zero-charge defects, present in the tunnel junction region can also significantly alter the tunneling rate, depending, however, on the specific conductivity regime, and orientation and moment of the dipole. In the low-bias regime, with high-resistance tunneling mode, dipoles of nearly all orientations and moments can alter the current, indicating the extreme sensitivity of the tunneling current to the slightest imperfection in the tunnel gap. In the high-bias regime, with low-resistivity, only dipoles with high moments and oriented in the directions perpendicular to the electron tunneling direction can significantly affect the current, thus making this conductivity regime significantly less prone to the influence of dipole defects with low-moments or oriented in the direction parallel to the tunneling.

42 ENGINEERING↗
DOE OSTI2018

Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

36 MATERIALS SCIENCE↗