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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Modeling from Local to Subsystem Level Effects in Analog and Digital Circuits Due to Space Induced Single Event Transients

Single Event Transients in analog and digital electronics from space generated high energetic nuclear particles can disrupt either temporarily and sometimes permanently the functionality and performance of electronics in space vehicles. This work first provides some insights into the modeling of SET in electronic circuits that can be used in SPICE-like simulators. The work is then directed to present methodologies, one of which was developed by this author, for the assessment of SET at different levels of integration in electronics, from the circuit level to the subsystem level.

State Transistion Model.↗
NASA NTRS2008

Total Dose Effects on Single Event Transients in Linear Bipolar Systems

Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.

Buchner, Stephen↗
NASA NTRS2006

Single-Event Transients in Voltage Regulators

Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.

circuit testing↗
NASA NTRS1976

Preliminary report on the CTS transient event counter performance through the 1976 spring eclipse season

The transient event counter (TEC), senses and counts transients having a voltage rise of greater than five volts in three separate wire harnesses: the attitude control harness, the solar array instrumentation harness and the solar array power harness. The operational characteristics of TEC are defined and the preliminary results obtained through the first 90 days of operation including the spring 1976 eclipse season are presented. The results show that the Communications Technology Satellite was charged to the point where discharges occurred. The discharge induced transients did not cause any anomalous events in spacecraft operation. The data indicate that discharges can occur at any time during the day without preference to any local time quadrant. The number of discharges occurring in the one second sample interval are greater than anticipated. The compilation and review of the data is continuing.

Stevens, N. J.↗
NASA NTRS2011

THEMIS Observations of a Transient Event at the Magnetopause

This study focuses on Time History of Events and Macroscale Interactions During Substorms (THEMIS) observations of a long \duration transient event in the vicinity of the dayside magnetopause at approx.15:34 UT on 18 July 2008 that was characterized by features typical of a magnetospheric flux transfer event (FTE): a bipolar negative-positive 5-7 nT signature in the Bn component, a positive monopolar variation in the Bl and Bm components, a approx.5-7 nT enhancement in the total magnetic field strength, and a transient density and flow enhancement. The interplanetary magnetic field (IMF) was mostly radial and disturbed during the intervals studied; that is, it was favorable for the repeated formation, disappearance and reformation of the foreshock just upstream from the subsolar bow shock. We show that varying IMF directions and solar wind pressures created significant effects that caused the compressions of the magnetosphere and the bow shock and magnetopause motions and triggered the transient event. Global signatures of magnetic impulse events (MIEs) in ground magnetograms during the period suggest a widespread pressure pulse instead of a localized FTE as the cause of the event in the magnetosphere. The directions of propagation and the flow patterns associated with the event also suggest an interpretation in terms of pressure pulses.

Korotova, G. I.↗
NASA NTRS2021

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.

Heavy ions↗
NASA NTRS2022

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response for these relatively large devices.

Focused X-ray↗
NASA NTRS2002

Single-event transients in high-speed comparators

Single-event transients are produced in linearintegrated circuits when they are exposed to heavy ions or protons, and those transients can be a significant problem for electronic circuits in spacecraft.

space↗
NASA NTRS1977

Preliminary report on the CTS transient event counter performance through the 1976 spring eclipse season

The transient event counter is described, defining its operational characteristics, and presenting the preliminary results obtained through the first 90 days of operation including the Spring 1976 eclipse season. The results show that the CTS was charged to the point where discharges have occurred. The discharge induced transients have not caused any anomalous events in spacecraft operation. The data indicate that discharges can occur at any time during the day without preference to any local time quadrant. The number of discharges occurring in the 1 sec sample interval are greater than anticipated.

Stevens, N. J.↗
NASA NTRS2021

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused X-ray, pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.

Heavy ions↗
NASA NTRS2012

Swift Follow-Up Observations of Candidate Gravitational-Wave Transient Events

We present the first multi-wavelength follow-up observations of two candidate gravitational-wave (GW) transient events recorded by LIGO and Virgo in their 2009-2010 science run. The events were selected with low latency by the network of GW detectors (within less than 10 minutes) and their candidate sky locations were observed by the Swift observatory (within 12 hr). Image transient detection was used to analyze the collected electromagnetic data, which were found to be consistent with background. Off-line analysis of the GW data alone has also established that the selected GW events show no evidence of an astrophysical origin; one of them is consistent with background and the other one was a test, part of a "blind injection challenge." With this work we demonstrate the feasibility of rapid follow-ups of GW transients and establish the sensitivity improvement joint electromagnetic and GW observations could bring. This is a first step toward an electromagnetic follow-up program in the regime of routine detections with the advanced GW instruments expected within this decade. In that regime, multi-wavelength observations will play a significant role in completing the astrophysical identification of GW sources. We present the methods and results from this first combined analysis and discuss its implications in terms of sensitivity for the present and future instruments.

Evans, P. A.↗
NASA NTRS2009

Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar Circuits

This presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.

Buchner, S.↗
NASA NTRS2006

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

operational amplifier↗