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At least 19 records

Curved Displacement Transfer Functions for Geometric Nonlinear Large Deformation Structure Shape Predictions

For shape predictions of structures under large geometrically nonlinear deformations, Curved Displacement Transfer Functions were formulated based on a curved displacement, traced by a material point from the undeformed position to deformed position. The embedded beam (depth-wise cross section of a structure along a surface strain-sensing line) was discretized into multiple small domains, with domain junctures matching the strain-sensing stations. Thus, the surface strain distribution could be described with a piecewise linear or a piecewise nonlinear function. The discretization approach enabled piecewise integrations of the embedded-beam curvature equations to yield the Curved Displacement Transfer Functions, expressed in terms of embedded beam geometrical parameters and surface strains. By entering the surface strain data into the Displacement Transfer Functions, deflections along each embedded beam can be calculated at multiple points for mapping the overall structural deformed shapes. Finite-element linear and nonlinear analyses of a tapered cantilever tubular beam were performed to generate linear and nonlinear surface strains and the associated deflections to be used for validation. The shape prediction accuracies were then determined by comparing the theoretical deflections with the finiteelement- generated deflections. The results show that the newly developed Curved Displacement Transfer Functions are very accurate for shape predictions of structures under large geometrically nonlinear deformations.

displacement theory↗

Algorithms for l2 and l-infinity transfer function curve fitting

In this paper algorithms for fitting transfer functions to frequency response data are developed. Given a complex vector representing the measured frequency response of a physical system, a transfer function of specified order is determined that minimizes either of the following criteria: (1) the sum of the magnitude-squared of the frequency response errors, and (2) the magnitude of the maximum error. Both of these criteria are nonlinear in the coefficients of the unknown transfer function, and iterative minimization algorithms are proposed. A numerical example demonstrates the effectiveness of the proposed algorithms.

Spanos, John T.↗

Forced convective heat transfer in curved diffusers

Measurements of the velocity characteristics of the flows in two curved diffusers of rectangular cross section with C and S-shaped centerlines are presented and related to measurements of wall heat transfer coefficients along the heated flat walls of the ducts. The velocity results were obtained by laser-Doppler anemometry in a water tunnel and the heat transfer results by liquid crystal thermography in a wind tunnel. The thermographic technique allowed the rapid and inexpensive measurement of wall heat transfer coefficients along flat walls of arbitrary boundary shapes with an accuracy of about 5 percent. The results show that an increase in secondary flow velocities near the heated wall causes an increase in the local wall heat transfer coefficient, and quantify the variation for maximum secondary-flow velocities in a range from 1.5 to 17 percent of the bulk flow velocity.

Rojas, J.↗

Modeling of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate

Considerable research has been performed by several organizations in the use of the Metal- Ferroelectric-Semiconductor Field-Effect Transistors (MFSFET) in memory circuits. However, research has been limited in expanding the use of the MFSFET to other electronic circuits. This research project investigates the modeling of a NAND gate constructed from MFSFETs. The NAND gate is one of the fundamental building blocks of digital electronic circuits. The first step in forming a NAND gate is to develop an inverter circuit. The inverter circuit was modeled similar to a standard CMOS inverter. A n-channel MFSFET with positive polarization was used for the n-channel transistor, and a n-channel MFSFET with negative polarization was used for the p-channel transistor. The MFSFETs were simulated by using a previously developed current model which utilized a partitioned ferroelectric layer. The inverter voltage transfer curve was obtained over a standard input of zero to five volts. Then a 2-input NAND gate was modeled similar to the inverter circuit. Voltage transfer curves were obtained for the NAND gate for various configurations of input voltages. The resultant data shows that it is feasible to construct a NAND gate with MFSFET transistors.

Phillips, Thomas A.↗

Addressable inverter matrix for process and device characterization

The addressable inverter matrix consists of 222 inverters each accessible with the aid of a shift register. The structure has proven useful in characterizing the variability of inverter transfer curves and in diagnosing processing faults. For good 3-micron CMOS bulk inverters investigated, the percent standard deviation of the inverter threshold voltage was less than one percent and the inverter gain (the slope of the inverter transfer curve at the inverter threshold vltage) was less than 3 percent. The average noise margin for the inverters was near 2 volts for a power supply voltage of 5 volts. The specific faults studied included undersize pull-down transistor widths and various open contacts in the matrix.

Buehler, M. G.↗

Addressable inverter matrix for process and device characterization

The addressable inverter matrix consists of 222 inverters each accessible with the aid of a shift register. The structure has proven useful in characterizing the variability of inverter transfer curves and in diagnosing processing faults. For good 3-micron CMOS bulk inverters investigated in this study, the percent standard deviation of the inverter threshold voltage was less than one percent and the inverter gain (the slope of the inverter transfer curve at the inverter threshold voltage) was less than 3 percent. The average noise margin for the inverters was near 2 volts for a power supply voltage of 5 volts. The specific faults studied included undersize pull-down transistor widths and various open contacts in the matrix.

Buehler, M. G.↗

Flow and heat transfer in a curved channel

Flow and heat transfer in a curved channel of aspect ratio 6 and inner- to outer-wall radius ratio 0.96 were studied. Secondary currents and large longitudinal vortices were found. The heat-transfer rates of the outer and inner walls were independently controlled to maintain a constant wall temperature. Heating the inner wall increased the pressure drop along the channel length, whereas heating the outer wall had little effect. Outer-wall heat transfer was as much as 40 percent greater than the straight-channel correlation, and inner-wall heat transfer was 22 percent greater than the straight-channel correlation.

Brinich, P. F.↗

Assessment of the quality of Gate area rainfall data from a Nimbus-5 radiometer

The quality of rainfall intensity estimates derived from passive microwave measurements by the electrically scanned microwave radiometer (ESMR-5) aboard the Nimbus 5 satellite are evaluated. The microwave measurements used are those coincident with the global atmospheric research program Atlantic tropical experiment (GATE). The ESMR 5 derived rainfall intensity estimates are compared with hourly averaged GATE radar rainfall measurements. It is determined from the transfer curves derived using the radar measurements as ground truth, that the ESMR 5 derived data consistently over estimates rainfall by a factor of approximately 1.4.

Knox, N.↗

Assessment of the quality of GATE area rainfall data from a Nimbus-5 radiometer

The quality of rainfall intensity estimates derived from passive microwave measurements by the Electrically Scanned Microwave Radiometer (ESMR-5) aboard the NIMBUS-5 satellite was evaluated. The microwave measurements used are those coincident with the GARP (Global Atmospheric Research Program) Atlantic Tropical Experiment (GATE). ESMR-5 derived rainfall intensity estimates are compared with hourly averaged GATE radar rainfall measurements. Using the radar measurements as ground truth it is determined that with the transfer curve derived herein the ratio (ESMR-5 derived rain rate)/radar measured rain rate has a mean of approximately 0.62.

Knox, N.↗

Surface Tension Induced Instabilities in Reduced Gravity: the Benard Problem

A Benard convection experiment has been set up, and the onset of convection in shallow layers of silicone oil two millimeters or less deep has been studied. The onset has been observed visually or has been determined by the break in the heat transfer curve which accompanies the onset of convection. The outcome of these experiments has been very surprising, from the point of view of theoretical expectations. The onset of convection at temperature differences far below the critical value for fluid depths smaller than 2mm was observed. The discrepancy between experiments and theory increases with decreasing fluid depth. According to theoretical considerations, the effects of surface tension become more important as the fluid depth is decreased. Actually, one observes that the onset of convection tales place in two stages. There is first an apparently surface tension driven instability, occuring at subcritical temperature differences according to conventional theory. If then the temperature difference is increased, a second instability occurs which transform the first pattern into conventional strong hexagonal Benard cells. The second instability is in agreement with the critical temperature gradients predicted by Nield.

Koschmieder, E.↗

The calibratrion of dopplergrams and magnetograms at BBSO

The calibration procedure for the Big Bear Solar Observatory (BBSO) videomagnetograph in which the radial velocity of the sidereal rotation of the Sun is used as a calibrator is described. One of the key points of the procedure is to eliminate the effects of the Earth's motion relative to the Sun and the temperature instability of the birefringent filter by tuning the bandpass of the birefringent filter. The other is to make the light level of the direct image of the videomagnetograph the same both in Doppler and in Zeeman modes in order to reduce the errors introduced by imperfect linearity of the transfer curve of the camera tube. Some practical problems of calibration are discussed for further improvement.

Shi, Z.↗

Onset of surface-tension-driven Benard convection

An experimental investigation of the onset of convection in shallow fluid layers heated uniformly from below and cooled from above by an air layer has been made. If the depth of the silicone layer is smaller than 2 mm the onset of convection takes place in two stages. There is first a weak pattern, which is characterized by its appearance at ever smaller temperature gradients as the depth of the fluid is decreased. When the temperature difference across the fluid is increased a second strong pattern forms near the predicted critical Marangoni number. The cells in this pattern are hexagonal and seem to be what one has always referred to as Benard cells. The temperature gradient at which this pattern appears increases with decreased depth. The heat transfer through the fluid has been measured. The critical temperature gradient for the formation of the hexagonal pattern has been determined from the break of the heat transfer curve.

Koschmieder, E. L.↗

A quadrant-CCD star tracker

The characteristics of a quadrant-CCD designed for pointing and tracking are discussed with reference to its use in an adaptive optics program. The quadrant-CCD is used to correct stellar image motion proceeding from atmospheric turbulence by means of a system in which a sensor measures the image offset and sends data to a high-speed tip/tilt mirror. The design and control of the device are detailed, including four 100-micron-square pixels, the quadrant architecture, controller electronics, and data acquisition computer and interface. The transfer function is set forth in the x and y directions, and transfer curves are shown. A laboratory simulation of random image motion was conducted to evaluate the performance of the quadrant-CCD as an image motion sensor, and the experimental results are presented. The suitability of the quadrant-CCD for space-based pointing and tracking uses is demonstrated by this test and two earlier theoretical studies. Some future developments which improve performance capabilities are mentioned.

Clampin, M.↗

Sub-electron noise charge coupled devices

A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed.

Chandler, Charles E.↗

Characterization of Custom-Designed Charge-Coupled Devices for Applications to Gas and Aerosol Monitoring Sensorcraft Instrument

Custom-designed charge-coupled devices (CCD) for Gas and Aerosols Monitoring Sensorcraft instrument were developed. These custom-designed CCD devices are linear arrays with pixel format of 512x1 elements and pixel size of 10x200 sq m. These devices were characterized at NASA Langley Research Center to achieve a full well capacity as high as 6,000,000 e-. This met the aircraft flight mission requirements in terms of signal-to-noise performance and maximum dynamic range. Characterization and analysis of the electrical and optical properties of the CCDs were carried out at room temperature. This includes measurements of photon transfer curves, gain coefficient histograms, read noise, and spectral response. Test results obtained on these devices successfully demonstrated the objectives of the aircraft flight mission. In this paper, we describe the characterization results and also discuss their applications to future mission.

Refaat, Tamer F.↗

Characterization of InGaAs Linear Array for Applications to Remote Sensing

An Indium Gallium Arsenide linear photodiode array in the 1.1-2.5 micron spectral range was characterized. The array has 1024x1 pixels with a 25 micron pitch and was manufactured by Sensors Unlimited, Inc. Characterization and analysis of the electrical and optical properties of a camera system were carried out at room temperature to obtain detector performance parameters. The signal and noise were measured while the array was uniformly illuminated at varying exposure levels. A photon transfer curve was generated by plotting noise as a function of average signal to obtain the camera gain constant. The spectral responsivity was also measured, and the quantum efficiency, read noise and full-well capacity were determined. This paper describes the characterization procedure, analyzes the experimental results, and discusses the applications of the InGaAs linear array to future earth and planetary remote sensing mission.

Garcia, Christopher S.↗

Metal-Ferroelectric-Semiconductor Field-Effect Transistor NAND Gate Switching Time Analysis

Previous research investigated the modeling of a N Wga te constructed of Metal-Ferroelectric- Semiconductor Field-Effect Transistors (MFSFETs) to obtain voltage transfer curves. The NAND gate was modeled using n-channel MFSFETs with positive polarization for the standard CMOS n-channel transistors and n-channel MFSFETs with negative polarization for the standard CMOS p-channel transistors. This paper investigates the MFSFET NAND gate switching time propagation delay, which is one of the other important parameters required to characterize the performance of a logic gate. Initially, the switching time of an inverter circuit was analyzed. The low-to-high and high-to-low propagation time delays were calculated. During the low-to-high transition, the negatively polarized transistor pulls up the output voltage, and during the high-to-low transition, the positively polarized transistor pulls down the output voltage. The MFSFETs were simulated by using a previously developed model which utilized a partitioned ferroelectric layer. Then the switching time of a 2-input NAND gate was analyzed similarly to the inverter gate. Extension of this technique to more complicated logic gates using MFSFETs will be studied.

Phillips, Thomas A.↗