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Tutorial: Radiation Effects in Electronic Systems

This tutorial presentation will give an overview of radiation effects in electrical, electronic, and electromechanical (EEE) components as it applies to civilian space systems of varying size and complexity. The natural space environment presents many unique threats to electronic systems regardless of where the systems operate from low-Earth orbit to interplanetary space. The presentation will cover several topics, including: an overview and introduction to the applicable space radiation environments common to a broad range of mission designs; definitions and impacts of effects due to impinging particles in the space environment e.g., total ionizing dose (TID), total non-ionizing dose (TNID), and single-event effects (SEE); and, testing for and evaluation of TID, TNID, and SEE in EEE components.

total non-ionizing dose (TNID)

Current Status and Future Challenges in Risk-Based Radiation Engineering

This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.

Total Ionizing Dose (TID)

Single-event Effect Report for EPC Series eGaN FETs: Proton Testing for SEE and TNID Effects

Previous testing of the Enhanced Power Conversion (EPC) eGaN FETs showed sensitivity to destructive single-event effects (SEE) effects to heavy ions. The presence of tungsten plugs in the gate area raises concerns that the device may be vulnerable to SEE from protons. Irradiation of biased and unbiased devices with heavy ion has results in some damage suspected of being due to total non-ionizing dose (TNID). Proton irradiation is a better radiation type to study this effect. This study presents the results of testing device with protons for SEE and TNID. No SEE in the EPC2012 device, the most sensitive device to SEE, were seen with 53 MeV protons at several angles. The devices continued to function after 1.5 Mrad (Si) of proton dose with only a slight shift in parameters. These results suggest that gross TNID will not be a factor in using these devices nor suffer from SEE due to protons. However, the device should be tested at with 500 MeV protons to guarantee to immunity proton SEE.

Scheick, Leif