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Results for “thin-film stress”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Shear Band Formation in Thin-Film Multilayer Columns Under Compressive Loading: A Mechanistic Study

Micro-pillar compression is a popular experimental technique used for characterizing the mechanical behavior of nano- and micro-laminates. The compressive stress–strain response of the column-shaped thin-film composite can be measured, and the deformation and damage features can be revealed by post-test cross-section microscopy. The development of plastic instability in the form of localized strain concentration (shear bands), leading to eventual failure, is frequently observed. In the present study, a computational approach is used to illustrate the commonality of shear band formation from a continuum standpoint. Systematic finite element analyses are conducted, showing that the strain field tends to become localized once plastic yielding commences. Distinct shear offsets of the layered structure can be revealed from the numerical model, which is similar to those observed in experiments. The actual appearance of shear bands depends on the materials’ constitutive behavior and precise geometries. Post-yield strain hardening reduces the propensity of shear band formation, while strain softening enhances it. Imperfections such as the undulated layer geometry, as well as the frictional characteristics between the specimen and test apparatus, can also influence the shear band morphology and overall stress–strain response.

finite element modeling↗
NASA NTRS1989

Comparison of full 3-D, thin-film 3-D, and thin-film plate analyses of a postbuckled embedded delamination

Local buckling can cause large interlaminar stresses along the delamination front, which can lead to delamination growth. This paper examines several methods of calculating strain-energy release rates, which are often used to predict delamination growth. The thin-film plate analysis, which was least expensive, calculated the total strain-energy release rate G(T) quite accurately. However, the stress field along the delamination front is highly mixed-mode and has no fixed ratio of G(I) to G(II). Since plate analysis can only calculate G(T), it would not be useful for accurate predictions of delamination growth if mode mix is important.

Whitcomb, John D.↗
DOE OSTI2025

Electrochemical-Mechanical Coupling Strongly Affects the Performance of Nanopore, Thin-Film, and Solid-State Batteries

Here, the present study focuses on the electrochemical-mechanical (ECM) coupling effects of a thin-film, solid-state battery with only stiff, ceramic materials, in contrast to prior investigations that focus on individual active material particles or aggregations of particles. We model the impacts of ECM couplings including stress-transport and stress-equilibrium potential on the full-cell performance and potential mechanical failure modes of a thin-film battery conformally deposited in a nanopore scaffold, which is an experimentally achievable device. Model results indicate electrode volume changes due to lithium insertion or removal, along with mechanical boundary conditions, result in stress gradients that alter the lithium-ion flux, reduce lithium concentration gradients, and improve cell rate capability. However, the high stress levels in the cell can also lead to mechanics-related failure such as the separation of cell layers. For the parameter set in this work, stress-transport coupling has a much greater influence on rate capability than stress-potential coupling. Optimization of thin-film batteries to harness the benefits of ECM coupling effects requires leveraging geometric design and material selection. The current work underscores the need for further theoretical and experimental investigation into ECM coupling effects in thin-film batteries to enhance their understanding and design optimization.

25 ENERGY STORAGE↗
DOE OSTI2025

Three-dimensional nucleation and growth of deformation twins in magnesium

At two-thirds the weight of aluminum, magnesium alloys have the potential to reduce the fuel consumption of transportation vehicles. These advancements depend on our ability to optimize the desirable versus undesirable effects of deformation twins, which are three-dimensional (3D) microstructural domains that form under mechanical stresses. Previously only characterized through surface or thin-film measurements, we here present 3D in situ characterization of deformation twinning inside an embedded grain over mesoscopic fields of view using dark-field x-ray microscopy supported by crystal plasticity finite element analysis. The results revealed the role of triple junctions on twin nucleation and the sequence and irregularity of twin growth and showed that twin-grain junctions, twin-twin junctions, and twin boundaries were the sites of localized dislocation accumulation.

Lee, Sangwon [Univ. of Michigan, Ann Arbor, MI (Un↗
NASA NTRS1989

Diamond films for laser hardening

Laser-damage experiments were performed on free-standing polycrystalline diamond films prepared by plasma-enhanced CVD. The high laser-induced stress resistance found for this material makes it useful for thin-film coatings for laser optics. Results for diamond-coated silicon substrates demonstrate the enhanced damage threshold imparted by diamond thin-film coatings to materials susceptible to laser damage.

Albin, S.↗
NASA NTRS1989

Comparison of full 3-D, thin-film 3-D, and thin-film plate analyses of a postbuckled embedded delamination

Strain-energy release rates are often used to predict when delamination growth will occur in laminates under compression. Because of the inherently high computational cost of performing such analyses, less rigorous analyses such as thin-film plate analysis were used. The assumptions imposed by plate theory restrict the analysis to the calculation of total strain energy, G(sub t). The objective is to determine the accuracy of thin-film plate analysis by comparing the distribution of G(sub t) calculated using fully three dimensional (3D), thin-film 3D, and thin-film plate analyses. Thin-film 3D analysis is the same as thin-film plate analysis, except 3D analysis is used to model the sublaminate. The 3D stress analyses were performed using the finite element program NONLIN3D. The plate analysis results were obtained from published data, which used STAGS. Strain-energy release rates were calculated using variations of the virtual crack closure technique. The results demonstrate that thin-film plate analysis can predict the distribution of G(sub t) quite well, at least for the configurations considered. Also, these results verify the accuracy of the strain-energy release rate procedure for plate analysis.

Whitcomb, John D.↗
DOE OSTI2026

Pressure Heterogeneity and Material Utilization in Thin-Film Solid-State Cathodes

Intimate interfacial contact between the solid electrolyte and the cathode active material is critical for maximizing cathode utilization in solid-state batteries. However, volume changes during electrochemical cycling induce internal stresses that drive interfacial degradation, particularly under nonuniform stack pressure. In this study, we employ in situ energy-dispersive X-ray diffraction tomography to visualize and quantify reaction heterogeneities across a 3 mm-diameter solid-state cathode with a well-defined interface. Our results reveal that regions under a lower stack pressure exhibit reduced material utilization and reversibility, which negatively affect the high-pressure regions. Interfacial degradation further impedes lithium-ion transport and amplifies microscale reaction heterogeneity. These findings highlight the critical role of stack pressure distribution in governing interfacial stability and electrochemical performance, offering important design insights into practical solid-state battery systems.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Hot-spot durability testing of amorphous cells and modules

This paper discusses the results of a study to determine the hot-spot susceptibility of amorphous-silicon (a-Si) cells and modules, and to provide guidelines for reducing that susceptibility. Amorphous-Si cells are shown to have hot-spot susceptibility levels similar to crystalline-silicon (C-Si) cells. This premise leads to the fact that the same general guidelines must apply to protecting a-Si cells from hot-spot stressing that apply to C-Si cells. Recommendations are made on ways of reducing a-Si module hot-spot susceptibility including the traditional method of using bypass diodes and a new method unique to thin-film cells, limiting the string current by limiting cell area.

Gonzalez, Charles↗
NASA NTRS1985

Effect of flow oscillations on cavity drag and a technique for their control

Experiments to relate the state of the shear layer to cavity drag have been performed in a water channel using a 4" axisymmetric cavity model. Detailed flow measurements in various cavity flow oscillation phases, amplitude amplification along the flow direction, distribution of shear stress, and other momentum flux obtained by laser Doppler velocimeter are presented. Measurements show exponential dependence of cavity drag on the length of the cavity. A jump in the cavity drag coefficient is observed as the cavity flow shows a bluff body wake type behavior. Natural and forced oscillations are introduced by a sinusoidally heated thin-film strip which excites the Tollmein-Schlichting waves in the boundary layer upstream of the gap. For a large gap, self-sustained periodic oscillations are observed, while for smaller gaps, which do not oscillate naturally, periodical oscillations can be obtained by external forcing through the strip heater. The drag of the cavity can be increased by one order of magnitude in the non-oscillating case through external forcing. Also, it is possible to completely eliminate mode switching by external forcing. For the first time, it is demonstrated that amplitude of cavity flow Kelvin-Helmholtz wave is dampened or cancelled by introduction of external perturbation of natural flow frequency but different phase.

Gharib, M.↗
DOE OSTI2026

Forming Gas Annealing Improves the Performance of Ex Situ Sb-Doped CdSeTe Thin-Film Solar Cells

Group V doping in cadmium-selenide-telluride (CdSeTe) polycrystalline thin-film solar cells has demonstrated improved power conversion efficiencies (PCEs) and long-term stabilities as compared to the traditional Cu doping in the last decade. The dopants can be successfully incorporated by either in situ or ex situ doping. Here, we report that forming gas (FG) annealing enhances the efficiencies of CdSeTe polycrystalline thin-film solar cells utilizing ex situ antimony (Sb) doping via close-space sublimation of SbCl3 at ambient pressure. The FG annealing increases the hole density and carrier lifetime, reduces the back barrier height, and, therefore, leads to improved open-circuit voltages (VOCs) and fill factors (FFs). The champion device achieves a PCE of 19.2% with a VOC of 877 mV, a current density (JSC) of 30.2 mA/cm2, and an FF of 72.4%. Importantly, the Sb-doped devices showed improved stability under stress tests as compared to Cu-doped devices.

14 SOLAR ENERGY↗
DOE OSTI2025

Thin-Film Fracture Behavior for Diketopyrrolopyrrole Semiconducting Polymeric Films

Fracture energy, which quantifies a material’s resistance to the propagation of a pre-existing crack, is a key parameter for ensuring the mechanical reliability of stretchable organic electronic devices. However, most existing methods, such as a four-point bending fracture energy, utilized for measuring the fracture energy of semiconducting polymeric thin films are complicated by substrate effects, making it challenging to isolate the intrinsic behavior of the film from interfacial influences. In this study, we employed a pseudo free-standing pure shear method to systematically investigate the cohesive fracture energy of poly(diketopyrrolopyrrole-terthiophene) P(DPP-T)-based thin films to examine the effects of nanoconfinement, side chain length, degree of crystallinity, and strain rates. This method effectively eliminates substrate interference, enabling a direct assessment of the cohesive fracture energy of P(DPP-T) thin films. We found that thinner films and those with lower molecular weights exhibited significantly reduced fracture energies due to diminished chain entanglements. Additionally, films with shorter side chains displayed notably higher fracture energies, which were attributed to an increase in the degree of crystallinity. Finally, slower strain rates led to higher fracture energies, consistent with an enhanced stress relaxation. These insights offer practical guidelines for designing mechanically robust semiconducting polymers, contributing to the advancement of reliable, durable, flexible, and wearable electronic devices.

Zhang, Song [Univ. of Southern Mississippi, Hattie↗
NASA NTRS1972

Thin-film light-intensity measurement strain-analysis technique.

The optical response to loading of a thin metallic film deposited on a low-modulus structural substrate is studied theoretically and experimentally. Two types of optical properties called total and central-image transmittance (or reflectance) are shown to be related to the mechanical state of the substrate. Empirical optical-mechanical relationships are proposed between these optical properties and the substrate strain field of a general plane-stress problem. A technique based on wrinkle and microfracture patterns is described for determining principal directions of strain. Experimental results for uniaxially loaded specimens show that it is possible to obtain a nearly linear relationship between transmittance and strain for certain materials combinations.

Williams, J. G.↗
NASA NTRS1972

Thin-film diffusion brazing of titanium alloys

A thin film diffusion brazing technique for joining titanium alloys by use of a Cu intermediate is described. The method has been characterized in terms of static and dynamic mechanical properties on Ti-6Al-4V alloy. These include tensile, fracture toughness, stress corrosion, shear, corrosion fatigue, mechanical fatigue and acoustic fatigue. Most of the properties of titanium joints formed by thin film diffusion brazing are equal or exceed base metal properties. The advantages of thin film diffusion brazing over solid state diffusion bonding and brazing with conventional braze alloys are discussed. The producibility advantages of this process over others provide the potential for producing high efficiency joints in structural components of titanium alloys for the minimum cost.

Mikus, E. B.↗
NASA NTRS1986

High-Quality, Thin-Film Germanium Single Crystals

Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.

Outlaw, R. A.↗
NASA NTRS1985

Reliability and Engineering of Thin-Film Photovoltaic Modules. Research forum proceedings

A Research Forum on Reliability and Engineering of Thin Film Photovoltaic Modules, under sponsorship of the Jet Propulsion Laboratory's Flat Plate Solar Array (FSA) Project and the U.S. Department of Energy, was held in Washington, D.C., on March 20, 1985. Reliability attribute investigations of amorphous silicon cells, submodules, and modules were the subjects addressed by most of the Forum presentations. Included among the reliability research investigations reported were: Arrhenius-modeled accelerated stress tests on a Si cells, electrochemical corrosion, light induced effects and their potential effects on stability and reliability measurement methods, laser scribing considerations, and determination of degradation rates and mechanisms from both laboratory and outdoor exposure tests.

Ross, R. G., Jr.↗
NASA NTRS1985

Crystalline-silicon reliability lessons for thin-film modules

The reliability of crystalline silicon modules has been brought to a high level with lifetimes approaching 20 years, and excellent industry credibility and user satisfaction. The transition from crystalline modules to thin film modules is comparable to the transition from discrete transistors to integrated circuits. New cell materials and monolithic structures will require new device processing techniques, but the package function and design will evolve to a lesser extent. Although there will be new encapsulants optimized to take advantage of the mechanical flexibility and low temperature processing features of thin films, the reliability and life degradation stresses and mechanisms will remain mostly unchanged. Key reliability technologies in common between crystalline and thin film modules include hot spot heating, galvanic and electrochemical corrosion, hail impact stresses, glass breakage, mechanical fatigue, photothermal degradation of encapsulants, operating temperature, moisture sorption, circuit design strategies, product safety issues, and the process required to achieve a reliable product from a laboratory prototype.

Ross, R. G., Jr.↗
NASA NTRS1985

Outdoor performance testing of thin-film devices

The Advanced Systems Research Group supports the photovoltaic advanced R&D (PV AR&D) project by providing outdoor (global) testing of PV cells, submodules, modules, and arrays. The group also provides in house engineering and analysis to identify and determine how technical issues such as cell/module/system adaptations, long term stability, reliability, economics, materials availability, safety, and environmental impacts affect the development and ultimate use of advanced PV thin film, innovative cell, and material technologies. A major thrust of the research effort is to develop and utilize instrumentation and procedures for monitoring and analyzing PV cells and submodules including outdoor performance and stability testing and life cycle accelerated stress testing. To accomplish the above, the solar energy research institute (SERI) outdoor PV test facility was established in 1982. The group has designed testing systems and analysis procedures for, and has tested, numerous amorphous silicon thin film submodules provided by SERI subcontractors and has performed long term outdoor stability tests on CdS/CuIr Se sub 2 and hydrogen passivated silicon solar cells. A significant contribution from this facility over the past year was the testing of large area amorphous silicon submodules.

Source record↗
NASA NTRS1986

Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition

Thin-film Ge single crystals (approx. 10 microns) have been epitaxially grown on polished NaCl(100) substrates at 450C by using plasma-enhanced chemical vapor deposition. Films on approximately 1 sq cm and larger were separated from the NaCl by either melting the salt or by differential shear stress upon cooling to room temperature. The ordered growth of the Ge was found to be most sensitive to the initial plasma power and to the continuum flow dynamics within the carbon susceptor. The films were visually specular and exhibited a high degree of crysalline order when examined by X-ray diffraction. The films were found to be p-type with a carrier concentration of approximately 3 x 10 to the 16th power/cu cm, a resistivity of 0.11 ohm-cm, and a Hall hole mobility of 1820 sq cm/v/s at room temperature. Vacuum firing minimized the primary contaminant, Na, and corresponding lowered the carrier concentration to 4 x 10 to the 14th power/cu cm.

Outlaw, R. A.↗