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Through-Thickness Vertically Ordered Lamellar Block Copolymer Thin Films on Unmodified Quartz with Cold Zone Annealing
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Understanding the Interplay Between CdSe Thickness and Cu Doping Temperature in CdSe/CdTe Devices
Not provided.
Interference fringe (IF) technique for droplet contact angle and thickness measurements: Ultralow contact angle and nanoscale thickness measurement
Recently, reflection interference fringe (RIF) and transmission fringe (TIF) techniques have been introduced to investigate the origin of far-field interference fringe (IF) formation and to determine a droplet's contact angle and thickness by measuring the fringe radius. In this study, characteristics of the IF technique are analyzed based on the RIF and TIF by varying the schematics, such as configuration (transmission/reflection), the droplet's side (left-hand side/right-hand side), and the substrate types (flat/prism). The analysis also investigates the refraction effect at the droplet edge and the maximum incidence and contact angles. The schematic variation shows that the widest contact angle range can be measured in a transmission configuration with droplet's right-hand side, and that the fringe radius decreases with incidence angles on a prism substrate, consistent with the recent observation. Refraction at the droplet edge causes the fringe radius to increase or decrease depending on the degree of refraction. Based on the characteristics study, it is revealed that the IF technique can determine nanometer-scale thicknesses below 100 nm on droplets, corresponding to ultra-small contact angles of less than 0.01°, with an extended working distance of 3000 mm and an optimized incidence angle, assuming a spherical profile. This finding is significant, as it demonstrates that the nanoscale thickness can be determined in situ under ambient conditions using a simple optical configuration, without requiring a sophisticated setup, such as a microscope. It is anticipated that the IF technique can be combined with other nanoscale thickness measurement techniques to enhance its measurement reliability.
Understanding Thickness-Dependent Transport Kinetics in Nanosheet-Based Battery Electrodes
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Energy-Dispersive X-ray Diffraction: Operando Visualization of Electrochemical Activity of Thick Electrodes
Abstract not provided
Nonmonotonic thickness-dependence of in-plane thermal conductivity of few-layered MoS 2 : 2.4 to 37.8 nm
The thermal conductivity of supported MoS 2 is discovered to first decrease with thickness (<9.2 nm), then increase with thickness.
Boosting solid oxide fuel cell performance via electrolyte thickness reduction and cathode infiltration
Increasing the power density and reducing the operating temperature of solid oxide fuel cells (SOFCs) is important for improving commercial viability. Here we discuss two strategies for achieving such improvements in Ni–YSZ supported SOFCs – electrolyte thickness reduction and cathode infiltration. Microstructural and electrochemical results are presented showing the effect of reducing YSZ/GDC electrolyte thickness from 8 to 2.5 μm, and the effect of PrO x infiltration into the LSCF–GDC cathode. Both of these measures are effective, particularly at lower temperatures, leading to an increase in the maximum power density at 650 °C from 0.4 to 0.95 W cm –2 , for example. Electrochemical impedance spectroscopy utilizing subtractive analysis shows that PrO x enhances the cathode charge transfer process. Reducing the electrolyte thickness reduces not only the cell ohmic resistance but also the electrode polarization resistance. Furthermore, the latter effect appears to be an artifact associated with a slight increase in the steam partial pressure at the anode due to minor gas leakage across the thinner electrolyte.
Structural and thermodynamic limits of layer thickness in 2D halide perovskites
In the fast-evolving field of halide perovskite semiconductors, the 2D perovskites (A') 2 (A) n -1 M n X 3 n +1 [where A = Cs + , CH 3 NH 3 + , HC(NH 2 ) 2 + ; A' = ammonium cation acting as spacer; M = Ge 2+ , Sn 2+ , Pb 2+ ; and X = Cl - , Br - , I - ] have recently made a critical entry. The n value defines the thickness of the 2D layers, which controls the optical and electronic properties. The 2D perovskites have demonstrated preliminary optoelectronic device lifetime superior to their 3D counterparts. They have also attracted fundamental interest as solution-processed quantum wells with structural and physical properties tunable via chemical composition, notably by the n value defining the perovskite layer thickness. The higher members ( n > 5) have not been documented, and there are important scientific questions underlying fundamental limits for n . To develop and utilize these materials in technology, it is imperative to understand their thermodynamic stability, fundamental synthetic limitations, and the derived structure–function relationships. We report the effective synthesis of the highest iodide n -members yet, namely (CH 3 (CH 2 ) 2 NH 3 ) 2 (CH 3 NH 3 ) 5 Pb 6 I 19 ( n = 6) and (CH 3 (CH 2 ) 2 NH 3 ) 2 (CH 3 NH 3 ) 6 Pb 7 I 22 ( n = 7), and confirm the crystal structure with single-crystal X-ray diffraction, and provide indirect evidence for “(CH 3 (CH 2 ) 2 NH 3 ) 2 (CH 3 NH 3 ) 8 Pb 9 I 28 ” (“ n = 9”). Direct HCl solution calorimetric measurements show the compounds with n > 7 have unfavorable enthalpies of formation (Δ H f ), suggesting the formation of higher homologs to be challenging. Finally, we report preliminary n -dependent solar cell efficiency in the range of 9–12.6% in these higher n -members, highlighting the strong promise of these materials for high-performance devices.
Diazonium-Functionalized Silicon Hybrid Photoelectrodes: Film Thickness and Composition Effects on Photoelectrochemical Behavior
Aryl diazonium electrografting is a powerful method for imparting molecular functionality onto various substrates by forming a stable carbon-surface covalent bond. While the high reactivity of the aryl radical intermediate makes this method fast and reliable, it can also lead to the formation of an insulating and disordered multilayer film. These thick films affect electrochemical performance, especially for semiconductor substrates used in photoelectrochemical applications. For this work we studied the effects of film thickness and composition by electrografting in situ-generated aminobenzene diazonium salts onto both n-type and p-type silicon electrodes at fixed potentials. Next, we attached ferrocene to the amine-terminated films and probed their (photo)electrochemical behavior. Cyclic voltammetry measurements showed decreased electrochemical reversibility with increasing diazonium film thickness; this reversibility was restored when ferrocene was incorporated throughout the film with a layer-by-layer deposition process. Finally, we compared the behavior of dark p-type electrodes to n-type photoelectrodes and observed differences in the electrochemical reversibility that we attribute to the change in potential drop across the two interfaces.
Lithium vanadium oxide (Li 1.1 V 3 O 8 ) thick porous electrodes with high rate capacity: utilization and evolution upon extended cycling elucidated via operando energy dispersive X-ray diffraction and continuum simulation
The phase distribution of lithiated LVO in thick (~500 μm) porous electrodes (TPEs) designed to facilitate both ion and electron transport was determined using synchrotron-based operando energy dispersive X-ray diffraction (EDXRD). Probing 3 positions in the TPE while cycling at a 1C rate revealed a homogeneous phase transition across the thickness of the electrode at the 1st and 95th cycles. Additionally, continuum modelling indicated uniform lithiation across the TPE in agreement with the EDXRD results and ascribed decreasing accessible active material to be the cause of loss in delivered capacity between the 1st and 95th cycles. The model was supported by the observation of significant particle fracture by SEM consistent with loss of electrical contact. Overall, the combination of operando EDXRD, continuum modeling, and ex situ measurements enabled a deeper understanding of lithium vanadium oxide transport properties under high rate extended cycling within a thick highly porous electrode architecture.
Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron‐Scale Spatial Resolution Using Spectral Photoluminescence
Thin films deposited on crystalline silicon surfaces are critical components of many silicon‐based devices, including high‐efficiency photovoltaic cells. Knowledge of their optical and electronic properties is important in designing and fabricating efficient solar cells, especially as the device complexity increases and includes micron‐scale features. Here, a camera‐based photoluminescence (PL) technique is developed to image the thickness of specific passivating films on silicon wafers. The technique is entirely contactless and nondestructive, requires minimal sample preparation, and provides a large dynamic range in terms of field of view, with micron‐scale spatial resolution possible. It retains the advantages of PL imaging, a mainstream technique for photovoltaic material and device characterization, and it has some extra capabilities similar to those of ellipsometry. This newly developed technique is demonstrated on hydrogenated amorphous silicon and silicon nitride films, two important passivation technologies for high‐efficiency silicon solar cells.
Joining thick section aluminum to steel with suppressed FeAl intermetallic formation via friction stir dovetailing
A new solid-phase technique called friction stir dovetailing (FSD) has been developed for joining thick section aluminum to steel. In FSD, mechanical interlocks are formed at the aluminum-steel interface and are reinforced by metallurgical bonds where intermetallic growth has been uniquely suppressed. Lap shear testing shows superior strength and extension at failure compared to popular friction stir approaches where metallurgical bonding is the only joining mechanism. High resolution microscopy revealed the presence of a 40-70 nm interlayer having a composition of 76.4 at% Al, 18.4 at% Fe, and 5.2 at% Si, suggestive of limited FeAl3 intermetallic formation.
Effect of lattice mismatch and shell thickness on strain in core@shell nanocrystals
Abstract not provided
Nanoscale control over water-film thickness using temperature modulation: tuning mineral carbonation reactivity
Temperature modulation was demonstrated as a novel way to control water partitioning during the reaction of silicate minerals with water-saturated supercritical carbon dioxide.
Thickness dependence of spin wave dynamics in three-fold nano-ellipse clusters
We present the results of an experimental and theoretical study of spin wave dynamics in three-fold vertices made of permalloy nano-ellipses, with thicknesses ranging from 7.5 nm to 40 nm. For the most symmetric modes, a non-trivial variation of their frequency and intensity with the ellipse thickness is found. Simulations involving the dynamical matrix approach are in good agreement with the experiments.