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At least 19 records

Thermal conductivity, electrical resistivity, and thermopower of aerospace alloys from 4 to 300 K.

Measurement of thermal conductivity, electrical resistivity, and thermopower for several aerospace alloys: titanium alloy A110-AT, aluminum alloy 7039, Inconel 718, and Hastelloy X. Tables and graphs of the measured properties and Lorenz ratio are presented over the range from 4 to 300 K. Comparisons to other measurements and theoretical analysis of the data are included. The uncertainties of the property data are estimated as 0.7 to 2.5% for thermal conductivity, 0.25% in electrical resistivity, and about 0.1 microvolt/K in thermopower.

Hust, J. G.↗

Thermal conductivity, electrical resistivity, and thermopower of aerospace alloys from 4 to 300 K. 6: Fe-22Cr-13Ni-5Mn stainless steel

The equipment and techniques for determining the thermal conductivity, electrical resistivity Lorenz ratio, and thermopower characteristics of Fe-22Cr-13Ni-5Mn stainless steel are discussed. The dimensions of the specimen and its preparation are described. The experimental data are represented by arbitrary functions over the entire range and smooth tables are generated from these functions.

Hust, J. G.↗

The thermopower in the temperature range T(sub c)-1000K and the bank spectrum of Bi-based superconductors

The temperature dependencies of thermopower, S, in the range T = T(sub c)-1000K as well as of resistivity and Hall coefficient in the range T = T(sub c)-300K for the single-phase ceramic samples Bi2Sr2Ca(1-x)Nd(x)Cu2O(y) have been measured. It was found that the S(T) dependencies in normal phase have three characteristic regions. Despite the fact that the S(T) dependencies in Bi-based high-T(sub c) superconductors (HTSC) differ essentially from ones in Y-based HTSC at T = T(sub c)-300K, the main feature of theirs (S(T) = const at high temperatures) retains in samples investigated at T is greater than 620K. The results obtained have been analyzed on the basis of the narrow-band model with the use of assumption of slight asymmetry of the conductive band. The band spectrum parameters of the samples studied have been calculated. An analysis of the tendencies in these parameters changes with samples composition varying enables to make the conclusion about the similarity of the main features of the conductive band structure in Y- and Bi-based HTSC.

Gasumyants, V. E.↗

Cryogenic thermocouple calibration tables

Thermocouple calibration standards are developed for low-temperature thermocouple materials. Thermovoltage, thermopower, and the thermopower derivative are presented in tabular and graphical form.

Hall, W. J.↗

Computational modeling of properties

A simple model was developed to calculate the electronic transport parameters in disordered semiconductors in strong scattered regime. The calculation is based on a Green function solution to Kubo equation for the energy-dependent conductivity. This solution together with a rigorous calculation of the temperature-dependent chemical potential allows the determination of the dc conductivity and the thermopower. For wide-gap semiconductors with single defect bands, these transport properties are investigated as a function of defect concentration, defect energy, Fermi level, and temperature. Under certain conditions the calculated conductivity is quite similar to the measured conductivity in liquid 2-6 semiconductors in that two distinct temperature regimes are found. Under different conditions the conductivity is found to decrease with temperature; this result agrees with measurements in amorphous Si. Finally the calculated thermopower can be positive or negative and may change sign with temperature or defect concentration.

Franz, Judy R.↗

Computational modeling of properties

A simple model was developed to calculate the electronic transport parameters in disordered semiconductors in strong scattered regime. The calculation is based on a Green function solution to Kubo equation for the energy-dependent conductivity. This solution together with a rigorous calculation of the temperature-dependent chemical potential allows the determination of the dc conductivity and the thermopower. For wise-gap semiconductors with single defect bands, these transport properties are investigated as a function of defect concentration, defect energy, Fermi level, and temperature. Under certain conditions the calculated conductivity is quite similar to the measured conductivity in liquid II-VI semiconductors in that two distinct temperature regimes are found. Under different conditions the conductivity is found to decrease with temperature; this result agrees with measurements in amorphous Si. Finally the calculated thermopower can be positive or negative and may change sign with temperature or defect concentration.

Franz, Judy R.↗

High precision cryogenic thermal conductivity standards

New apparatus allows accurate simultaneous measurement of thermal conductivity, electrical resistivity, and thermopower for technically important materials, such as new or uncommon alloys. A list of materials investigated is presented. Sources for obtaining data on these materials, as well as the source giving a description of the apparatus, are cited.

Hust, J. G.↗

Electrical properties of /DEPE/ /TCNQ/sub 4

The electrical conductivity of two phases of (DEPE) (TCNQ)sub 4 is evaluated using four probe and Montgomery methods. The highest values (approximately 50 Ohms/cm) were found along the b sub 0 axis of the monoclinic phase (I) crystals at room temperature. The resistivities are described as semiconducting. Thermopower is observed to saturate at high temperatures to 60 microvolts/deg K, characteristic of a quarter-filled correlated band. It is pointed out that a stable metallic state for (DEPE) (TCNQ)sub 4 is theoretically possible, but none has thus far been found.

Somoano, R. B.↗