Nanocomposites from Solution-Synthesized PbTe-BiSbTe Nanoheterostructure with Unity Figure of Merit at Low-Medium Temperatures (500-600 K)
The large-scale implementation of thermoelectric devices is inhibited, in part, by the limited temperature range where each material can operate at its highest efficiency, as evaluated by the dimensionless figure of merit ( zT = S 2 σT/κ ). To date, Bi 2 Te 3 -based materials have been restricted to zT ≥ 1 between 300-500 K, before the onset of bipolar conduction reduces the zT significantly. Herein, we show that a scalable, low-temperature solution process method can be used to synthesize precursor material for Pb-doped Bi x Sb 2-x Te 3 bulk nanocomposites with a zT = 1 over the 500-600 K range, making this material suitable for low-grade waste heat recovery for the first time. Our success in increasing the efficiency of p-type Bi x Sb 2-x Te 3 at higher temperatures can be largely explained by the increase in the optical band gap, according to the Burstein-Moss shift, due to Pb doping, thus delaying the onset of bipolar conduction. Furthermore, the solution synthesis method enabled controlled nanostructuring of the bulk materials, which greatly reduced the thermal conductivity over the investigated temperature range. Lastly, our scalable synthesis processing method may be applicable to not only other thermoelectrics, but also in fields such as photocatalysis, electronics and optoelectronics.