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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers

Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.

Kim, Jae H.↗
NASA NTRS1992

Multiperiod-grating surface-emitting lasers

Surface-emitting distributed feedback (DFB) lasers are disclosed with hybrid gratings. A first-order grating is provided at one or both ends of the active region of the laser for retroreflection of light back into the active region, and a second-order or nonresonant grating is provided at the opposite end for coupling light out perpendicular to the surfaces of the laser or in some other selected direction. The gratings may be curved to focus light retroreflected into the active region and to focus light coupled out to a point. When so focused to a point, the DFB laser may be part of a monolithic read head for a laser recorded disk, or an optical coupler into an optical fiber.

Lang, Robert J.↗
NASA NTRS1991

Two-Period Gratings For Surface-Emitting Lasers

Grating surfaces having two spatial periods tailored to obtain desired proportions of output coupling and inward reflection. Solid-state lasers of type emitting light perpendicularly to their broad surfaces made more efficient. Same principle also applicable to "Annular-Bragg-Grating Surface-Emitting Laser", (NPO-17912).

Lang, Robert J.↗
NASA NTRS1990

Surface emitting lasers with combined output

Surface emitting lasers are laterally aligned and coupled together and also have their light output signals combined. This results in greater phase and frequency coherency and narrower and reduced amplitude sidelobes. Preferably, not more than two lasers are longitudinally aligned along the same axis for still greater coherency compared with adding the light output signals of more than two longitudinally aligned lasers. The lasers can be of the DH-LOC type or of the QW type.

Carlin, Donald B.↗
NASA NTRS1998

Computational Modeling of Vertical-Cavity Surface-Emitting Lasers

Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become increasingly important for many applications, such as optical interconnects and optical data storages. In many applications, critical requirements are very often high beam quality and/or high output powers. To help the design and optimization of VCSELs for such applications, it is essential to have a simulation model that includes the time evolution of the transverse space dependence of the hewn. Such models allow arbitrary transverse profiles of laser intensity or carrier density to develop in time without any a priori assumption about the number and types of transverse modes. In addition, extensive research in the past has shown that many-body effects are important in influencing the optical gain and the refractive index of semiconductor quantum wells. It is thus important to include the key many-body effects in simulation models for semiconductor lasers. A computational model, called the Maxwell-Effective Bloch Equations (MEBE) was developed recently that simulates the above features and effects. This model combines the space-time resolution with microscopic many-body effects in a way that is both accurate enough and computationally manageable. This model has been used to simulate edge-emitting high power lasers recently. A new finite-difference algorithm has been developed for solving these equations and will be shown in the presentation. That algorithm will be used to calculate the detailed time evolution of the transverse mode profiles of VCSELs. The VCSELs are based on InGaAs/GaAs quantum well structures. Effects of pumping current and refractive index profiles will be investigated in detail. The simulation results will be compared with other results the use the rate-equation model.

Goorjian, Peter M.↗
NASA NTRS1998

Computational Nonlinear of Vertical-Cavity Surface-Emitting Lasers

Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become increasingly important for many applications, such as optical interconnects and optical data storages. In many applications, critical requirements are very often high beam quality and/or high output powers. To help the design and optimization of VCSELs for such applications, it is essential to have a simulation model that includes the time evolution of the transverse space dependence of the beam. Such models allow arbitrary transverse profiles of laser intensity or carrier density to develop in time without any a priori assumption about the number and types of transverse modes. In addition, extensive research in the past has shown that many-body effects are important in influencing the optical gain and the refractive index of semiconductor quantum wells. It is thus important to include the key many-body effects in simulation models for semiconductor lasers. A computational model, called the Maxwell-Effective Bloch Equations (MEBE) was developed recently that simulates the above features and effects. This model combines the space-time resolution with microscopic many-body effects in a way that is both accurate enough and computationally manageable. This model has been used to simulate edge-emitting high power lasers recently. A new finite-difference algorithm has been developed for solving these equations and will be shown in the presentation. That algorithm will be used to calculate the detailed time evolution of the transverse mode profiles of VCSELs. The VCSELs are based on InGaAs/GaAs quantum well structures. Effects of pumping current and refractive index profiles will be investigated in detail. The simulation results will be compared with other results the use the rate-equation model.

Goorjian, Peter M.↗
NASA NTRS1992

Quantum well, beam deflecting surface emitting lasers

This invention relates to surface emitting semiconductor lasers (SELs), with integrated 45 deg. beam deflectors. A SEL is formed on a wafer including vertical mirrors and 45 deg. beam deflectors formed in grooves by tilted ion beam etching. A SEL is a lattice matched, or unstrained, AlGaAs/GaAs GRINSCH SQW SEL. An alternate embodiment is shown, in which a SEL is lattice mismatched, strained or pseudomorphic, or InGaAs/AlGaAs GRINSCH SQW SEL which emits radiation at a wavelength to which its substrate is transparent. Both SELs exhibit high output power, low threshold current density, and relatively high efficiency, and each are processing compatible with conventional large scale integration technology. Such SELs may be fabricated in large numbers from single wafers. The novel features of this invention include the use of tilted ion beam etching to form a pair of grooves each including vertical mirrors and 45 deg. beam deflectors. The embodiment provides substantial circuit design flexibility because radiation may be coupled both up and/or down through the substrate.

Kim, Jae H.↗
DOE OSTI2021

Narrow-linewidth single-mode vertical-cavity surface-emitting laser

A coupled-cavity vertical-cavity surface-emitting laser (VCSEL) is disclosed. The coupled-cavity VCSEL includes a passive cavity and an additional distributed Bragg Reflector (DBR) not found in conventional VCSELs, all in a monolithic device. By including these two elements, the photon lifetime may be increased by a factor of approximately ten, leading to a reduction in the laser linewidth by a factor of approximately 100 compared to conventional VCSELs. The two additional elements also serve to ensure single-mode operation of the coupled-cavity VCSEL.

Serkland, Darwin K.↗
NASA NTRS1998

Transverse Mode Dynamics of Broad-Area Edge- and Surface-Emitting Lasers

This paper reports new results of our recent theoretical and simulational research in broad-area diode lasers. In a broad-area edge- or surface-emitting laser, the large space dimension in the direction transverse to the propagation direction requires an adequate treatment of inhomogeneities of the relevant physical quantities, such as laser field intensity and electron-hole carrier densities. The density inhomogeneity requires gain and refractive index nonlinearities across the laser structure to be included. All these features can be captured by a set of space-time resolved partial differential equations, the so-called effective Bloch equations established recently. We have solved this set of equations for both edge-emitting and surface-emitting lasers. This allows us to investigate temporal dynamics of transverse mode structures in these lasers. The influence of the transverse pumping profile and geometrical structure of the devices will be reported for VCSELs, as well as the complex temporal competition dynamics of different modes.

Ning, Cun-Zheng↗
NASA NTRS1988

Surface emitting lasers for optical circuitry - Optical interconnect technology

Surface emitting (SE) lasers and their application in VLSI optical interconnect networks are considered. In particular, the advantages provided by SE lasers in optical interconnect circuits and monolithic integration are discussed. Some of the requirements, such as wavelength stability, power dissipation, emission angle, size, etc., are compared with respect to conventional laser diodes. It is noted that the operation of SE lasers will be critically dependent on the properties of the feedback reflectors. Experimental measurements of reflection spectra on AlGaAs/GaAs multilayer reflectors and InAlAs/InGaAs etalons formed with molecular beam epitaxy (MBE) are presented.

Yu, P. K. L.↗
DOE OSTI2022

Fourier-method beam analysis for coherent vertical cavity surface emitting laser arrays

Effective engineering and exploitation of coherently coupled vertical cavity surface emitting laser arrays will benefit from simple and fast characterization of the optical coupling and coherence. We propose a Fourier method of analyzing beam profiles as an alternative to the prior beam visibility analysis and show that the mode suppression ratio and phase between a pair of supermodes can be extracted. Our analysis enables fast quantitative determination of the array coherence and supermode characteristics.

Strzebonski, Pawel (ORCID:0000000156286296)↗
DOE OSTI2021

Electrically Pumped Epitaxially Regrown GaSb-Based Type-I Quantum-Well Surface-Emitting Lasers with Buried High-Index-Contrast Photonic Crystal Layer

Epitaxially regrown electrically pumped photonic crystal surface-emitting lasers (PCSELs) emitting near 2 and 2.6 μm are designed, fabricated, and characterized. A high-index-contrast photonic crystal layer is incorporated into the GaSb-based laser heterostructure by air-hole-retaining epitaxial regrowth. A square lattice of triangular holes is etched in the top waveguide core layer of the incomplete laser heterostructure. The nanopatterned surface is subsequently cleaned and regrown with AlGaAsSb p-cladding material. Transmission electron microscopy studies demonstrate uniform regrowth over the nanopatterned GaSb surface. The selected regrowth regimes yield a buried 2D array of elongated air-holes. The diode PCSELs based on moderately etched nanopatterns demonstrate band-edge lasing near 2 μm up to room temperatures. The cascade diode PCSELs operate near 2.6 μm with minimum threshold current densities of about 500 A cm -2 achieved at 180 K. The devices generate mW level output in narrow divergence beam emitted from the window in substrate contact. The angle-resolved electroluminescence measurements reveal a four-sub-band band structure with an apparent photonic bandgap corresponding to the buried high-index-contrast square photonic crystal layer. Finally, the PCSELs made of heterostructures supporting two modes in the vertical direction demonstrate two sets of sub-bands showing anti-crossing-like interaction.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1987

Means for phase locking the outputs of a surface emitting laser diode array

An array of diode lasers, either a two-dimensional array of surface emitting lasers, or a linear array of stripe lasers, is phase locked by a diode laser through a hologram which focuses the output of the diode laser into a set of distinct, spatially separated beams, each one focused onto the back facet of a separate diode laser of the array. The outputs of the diode lasers thus form an emitted coherent beam out of the front of the array.

Lesh, James R.↗
NASA NTRS2007

Optical Phased Array Antennas using Coupled Vertical Cavity Surface Emitting Lasers

High data rate communication links are needed to meet the needs of NASA as well as other organizations to develop space-based optical communication systems. These systems must be robust to high radiation environments, reliable, and operate over a wide temperature range. Highly desirable features include beam steering capability, reconfigurability, low power consumption, and small aperture size. Optical communication links, using coupled vertical cavity surface emitting laser radiating elements are promising candidates for the transmit portion of these communication links. In this talk we describe a mission scenario, and how the antenna requirements are derived from the mission needs. We describe a potential architecture for this type of antenna, and outline the advantages and drawbacks of this approach relative to competing technologies. The technology we are proposing used coupled arrays of 1550 nm vertical cavity surface emitting lasers for transmission. The feasibility of coupling these arrays together, to form coherent high-power beams that can be modulated at data rates exceeding 1 Gbps, will be explored. We will propose an architecture that enables electronic beam steering, thus mitigating the need for ancillary acquisition, tracking and beam pointing equipment such as needed for current optical communicatin systems. The beam-steering capability we are proposing also opens the possibility of using this technology for inter-satellite communicatin links, and satellite-to-surface links.

Mueller, Carl H.↗
DOE OSTI2021

Demonstration of a 20‐W membrane‐external‐cavity surface‐emitting laser for sodium guide star applications

Abstract We present a record 20‐W continuous‐wave output power membrane‐external‐cavity surface‐emitting laser (MECSEL) double‐bonded to silicon carbide (SiC) heat spreaders emitting around 1178 nm. We achieved a maximum slope efficiency of 27.7% and an optical‐to‐optical efficiency of 26.7%. By utilising an intracavity birefringent filtre, the wavelength was tuned over 75 nm and maximum output power of 12.7 W was recorded at 1178 nm. This study shows the potential of MECSELs to achieve high‐performance and cost‐effective optically pumped semiconductor disk lasers targeting applications in sodium guide stars.

Priante, D.↗
NASA NTRS1991

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Kim, Jae-Hoon↗
NASA NTRS1998

Simulation of Transverse Modes in Vertical-Cavity Surface-Emitting Lasers

An approximation to the Maxwell-Semiconductor Bloch equations is solved for the transverse modes of vertical-cavity surface-emitting lasers. A finite-difference algorithm will be used to calculate the detailed time evolution of the transverse mode profiles of VCSELs. Effects of pumping current and refractive index profiles will be investigated.

Goorjian, Peter M. P.↗