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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Performance enhancement of medium temperature baked niobium SRF cavity by surface contamination removal

Medium temperature baking (300- 350 °C) enhances the quality factor of niobium superconducting radio frequency cavities. However, surface contamination introduced during vacuum furnace baking limits the quench field and may also degrade the quality factor of the cavity. To investigate this effect, a 1.3 GHz single-cell Nb cavity underwent mid-T baking, followed by a chemical treatment to remove the surface contaminants. Post-treatment measurements revealed a significant improvement in both the quality factor and the quench field.

Chouhan, Vijay [Fermilab] (ORCID:0000000282004931)↗
DOE OSTI2025

Performance Enhancement of Medium Temperature Baked Nb SRF Cavity by Surface Contamination Removal

Medium-temperature (mid-T) baking, typically conducted at 300 350 C, enhances the quality factor of niobium (Nb) superconducting radio frequency cavities. However, surface contamination introduced during vacuum furnace baking can limit the cavity performance. To investigate this effect, a 1.3 GHz single-cell Nb cavity underwent mid-T baking, followed by a chemical treatment to remove the surface contaminants. Post-treatment measurements revealed a significant improvement in both the quality factor and the quench field.

Chouhan, Vijay [Fermilab]↗
DOE OSTI2025

Understanding Surface Contamination Effects in Mid-T Baked Cavities

Medium-temperature baking is applied to niobium SRF cavities to enhance their quality factor. However, mid-T baking performed in the 300-350 °C range may lead to the formation of surface carbides, which can prevent the cavities from exhibiting the full benefit of mid-T baking. To investigate the effect of potential surface contaminants, the top RF layer of mid-T-baked cavities was removed using an ultralight electropolishing process. The performance of the mid-T baked cavities was significantly improved after applying this ultralight EP. This presentation summarizes the latest results on this study.

Chouhan, Vijay [Fermilab]↗
DOE OSTI2025

Modeled sensitivity of multi-MA accelerator performance to electrode contaminant inventory

Significant particle-in-cell code development has enabled simulations of power flow in multi-MA accelerators to include the desorption of surface contaminants, their ionization into surface plasmas, and the impact of these plasmas on efficiency. The simulations base desorption on an Arrhenius equation, whose most significant unknown is the surface contaminant inventory. The sensitivity of power-flow simulations to this inventory is studied here using Sandia National Laboratories' Z accelerator with a 7-nH MagLIF load [Phys. Plasmas 17, 056303 (2010)]. Simulations are conducted in 3D cylindrical coordinates for the current-adder, or “convolute,” region of Z and in 2D for the final feed only. Simulated contaminant inventories are varied from 1 to 32 monolayers (MLs) in 2D, and 2 to 4 ML in 3D. The results reveal sensitivities to the local ratio of E/B⁠. The high B-field, low E-field region near the short-circuit load is insensitive to the contaminant inventory, where assumed values of 4–32 ML change the load current by ≤ 2%, and agree with experiment to within 2% at peak current. A 1-ML value is the outlier, increasing the load current by 5%, but still within measurement uncertainty. In contrast, the relatively higher E-field, lower B-field convolute region has slower contaminant desorption and higher-magnitude E-field penetration of the surface plasmas. The current loss in the convolute region does increase with contaminant inventory. The loss assuming 4 ML is 12% larger than for 2 ML, with 4 ML being the better match to experiment.

Arrhenius equation↗
DOE OSTI2025

Improving the Performance of Mid-T Baked Niobium Cavities through Post-Bake Surface Treatment

he Medium temperature (mid-T) baking of niobium superconducting radio-frequency cavities at 300 350 C in a vacuum furnace is known to enhance the quality factor (Q₀). However, despite this improvement, cavities treated with this process often exhibit premature quench at relatively low accelerating fields. This limitation is suspected to arise from the formation of surface contaminants, such as niobium carbides, during the furnace bake at 350 C for 3 h. To investigate the influence of potential surface contamination, this study applied an ultralight chemical removal to 1.3 GHz and 650 MHz single-cell cavities that had undergone medium-temperature baking. The removal of the top RF surface layer led to a notable improvement in the quench field and Q₀, indicating a beneficial effect of eliminating possible surface residues introduced during the bake.

Chouhan, Vijay [Fermilab]↗
DOE OSTI2026

Improving the performance of mid-T baked niobium cavities through post-bake surface treatment

The Medium temperature (mid-T) baking of niobium superconducting radio-frequency cavities at 300 350 C in a vacuum furnace is known to enhance the quality factor (Q₀). However, despite this improvement, cavities treated with this process often exhibit premature quench at relatively low accelerating fields. This limitation is suspected to arise from the formation of surface contaminants, such as niobium carbides, during the furnace bake at 350 C for 3 h. To investigate the influence of potential surface contamination, this study applied an ultralight chemical removal to 1.3 GHz and 650 MHz single-cell cavities that had undergone medium-temperature baking. The removal of the top RF surface layer led to a notable improvement in the quench field and Q₀, indicating a beneficial effect of eliminating possible surface residues introduced during the bake.

Chouhan, V. [Fermilab] (ORCID:0000000282004931)↗
DOE OSTI2025

A Reduced-Temperature Process for Preparing Atomically Clean Si(100) and SiGe(100) Surfaces with Vapor HF

Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >1000 °C) and promote surface reconstruction toward atomically clean, flat, and ordered Si(100)-2 × 1. Here, in this study, we compare the aqueous and vapor phase cleaning of Si and Si/SiGe surfaces to prepare APAM-ready and epitaxy-ready surfaces at lower temperatures. Angle resolved X-ray photoelectron spectroscopy (ARXPS) and Fourier transform infrared (FTIR) spectroscopy indicate that vapor hydrogen fluoride (VHF) cleans dramatically reduce carbon surface contamination and allow the chemically prepared surface to reconstruct at lower temperatures, 600 °C for Si and 580 °C for a Si/Si 0.7 Ge 0.3 heterostructure, into an ordered atomic terrace structure indicated by scanning tunneling microscopy (STM). After thermal treatment and vacuum hydrogen termination, we demonstrate STM hydrogen desorption lithography (HDL) on VHF-treated Si samples, creating reactive zones that enable area-selective chemistry by using a thermal budget similar to CMOS process flows. We anticipate that these results will establish new pathways to integrate APAM with Si foundry processing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Testing of spark plasma sintered porous tungsten under neon glow discharge cleaning conditions in LTX-β

This paper demonstrates that tungsten (W) based powder reconstituted Plasma Facing Components (PFCs) can be treated in situ in a fusion reactor to remove W oxide and carbon (C) contamination. Doing so should ease the challenge of using these materials in a Capillary Porous System (CPS) with lithium (Li) by enabling better wetting and less contamination of the Li by the underlying CPS. Most powder reconstituted materials including 3D printed and sintered PFCs suffer from a high surface contamination from oxides and surface C, which complicates their use with liquid Li, a primary PFC candidate. Spark plasma sintered porous W samples were fabricated to be used as a CPS with liquid Li. The samples were characterized in terms of morphology and surface chemistry. Analysis confirms a high C and oxygen (O) contamination. We present the results of exposing this type of CPS to Glow Discharge Cleaning (GDC) cycles in the Lithium Tokamak Experiment-β (LTX-β). The sample was exposed to neon (Ne) GDC in the midplane of the low-field side of LTX-β and analyzed in vacuo with Temperature Programmed Desorption (TPD) and Secondary Ion Mass Spectrometry (SIMS) to investigate the effects the Ne GDC had on the chemical composition of the sample. The combination of Ne GDC with rapid heating as done in TPD was successful in reducing the W oxides and removing the C contamination.

Capillary porous system↗
DOE OSTI2026

Plasma-assisted atomic layer etching of single-crystal diamond

Applications of near-surface nitrogen-vacancy (NV) centers in diamond are often limited by surface defects created during processing. Understanding and controlling plasma-induced surface damage is important for preserving the optical and spin properties of diamond NV centers. We report molecular dynamics simulations of a novel form of plasma-aided atomic layer etching of diamond. In this proposed scheme, the initial surface modification step consists of Ar + ion bombardment. This creates an amorphous layer at the surface, the thickness of which is controlled by the ion energy. Amorphization is known to help smooth the surface, at least locally, and would also serve to sputter clean an initially contaminated surface. A second step impacts the amorphous carbon layer with O + between about 1 and 5 eV. Simulations show that this energy range will remove the amorphous carbon but will not etch the underlying diamond. Though this energy range is not trivial to achieve in a conventional low-temperature plasma, potential methods for creating these low-energy O + ions are discussed. In addition to a-C etching, the O + impacts are predicted to remove any isolated (100) diamond terraces by selectively attacking the edges of the terraces. The proposed atomic layer etching (ALE) approach reverses the conventional ALE sequence in which the surface modification step is usually chemical modification (oxidation in this case), followed by a removal step using Ar + impacts. This plasma ALE procedure is predicted to create a diamond surface that is atomically flat and defect free.

Draney, J. S. [Princeton University, NJ (United St↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗
DOE OSTI2025

Addressing Inherent Challenges to Chemical Relithiation of Cycled End‐of‐Life Cathode Materials

Recycling end‐of‐life (EOL) lithium‐ion batteries (LIBs) is important to retain valuable resources from critical materials present in EOL battery waste. Direct recycling methods offer an opportunity to recover intact valuable cathode materials with minimal re‐processing. An important step of the direct recycling process is relithiation which is used to restore lithium content to EOL cathode materials. However, little has been done to study how preprocessing steps such as washing or binder removal may affect relithiation methods in the direct recycling process. Here, the evolution of fluorine byproducts left over from preprocessing steps during a low‐temperature chemical redox mediator relithiation process is tracked. A facile washing step is presented as a solution for mediating adverse effects of surface contamination on the chemical relithiation performance. The structure, lithium content, and electrochemical performance of relithiated EOL NMC 622 material that underwent a pre‐relithiation washing step to remove fluorine byproducts is shown to match that of pristine NMC 622. In this work, it is showed that redox mediator relithiation as a part of a direct recycling process is a promising low energy method that can be applied to EOL material with inherent surface impurities if the proper pre‐relithiation processing steps are implemented.

25 ENERGY STORAGE↗
DOE OSTI2025

Tungsten erosion during L-mode discharges in the DIII-D SAS-VW divertor

A series of L-mode plasma discharges was performed in the DIII-D tokamak to assess the impact of outer strike point (OSP) position and toroidal magnetic field direction on erosion and core contamination potential of the recently-installed, tungsten-coated Small Angle Slot (SAS-VW) divertor. In one discharge, in-slot emission spectroscopy measured an<48 % increase in the W gross erosion rate when the OSP was moved 3 cm outwards, away from the V-shaped vertex of the slot divertor. However, the effective W yield (erosion rate divided by the incident D flux) was, overall, insensitive to changes in OSP location. Consistently low estimates of the effective W yield based on measurements taken a few cm outwards from the vertex suggest potentially significant C surface contamination. No W emission signal was detected when orienting the toroidal magnetic field such that the ion B×∇B drift direction is pointed away from the X-point. However, measurements of W content in the plasma core for both toroidal magnetic field directions suggest the presence of additional, unmeasured sources of erosion. The difference in the measured core W density with OSP position is much greater than the difference in the measured erosion rates, which may suggest that the leakage of eroded impurities out of the divertor is governed primarily through the parallel ion temperature gradient and friction forces.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗