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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Lateral optical confinement of channeled-substrate-planar lasers with GaAs/AlGaAs substrates

A physical explanation of the lateral guiding mechanism in channeled-substrate-planar (CSP) lasers based on the amount of wavefront tilt of the transverse field outside the channel region is presented. Because of this inherent wavefront tilt, all CSP lasers will have a very slight asymmetry in their transverse far-field pattern. The nature of the guiding mechanism does not require light absorption by the substrate. Design curves showing the complex lateral effective index step as a function of n-clad thickness with the active layer as a parameter are also presented. Depending on the specific layer compositions and thicknesses, the CSP guiding mechanism can provide a positive lateral index step for substrates with mole fractions of AlAs ranging from 0 to higher than 0.2.

Evans, Gary A.↗
NASA NTRS1982

The effect of grooves in amorphous substrates on the orientation of metal deposits. I - Carbon substrates

The graphoepitaxial alignment of vapor-deposited discrete metal crystallites is investigated in the nucleation and growth stages and during annealing by in situ UHV/TEM techniques. Various stages of nucleation, growth and coalescence of vapor deposits of Au, Ag, Pb, Sn, and Bi on amorphous, topographically structured C substrates are analyzed by advanced dark-field techniques to detect preferred local orientations. It is found that the topography-induced orientation of metal crystallites depends strongly on their mobility and their respective tendency to develop pronounced crystallographic shapes. Lowering of the average surface free energies and increasing the crystallographic surface energy anisotropies cause generally improved graphoepitaxial alignments.

Anton, R.↗
DOE OSTI2025

Substrate matters: Coupled phonon modes of a spherical particle on a substrate probed with EELS

Using vibrational electron energy loss spectroscopy (vib-EELS) combined with numerical modeling, we investigate the physical mechanisms governing the phonon coupling between a spherical particle sustaining multipolar surface phonon modes and an underlying thin film. Depending upon their dielectric composition, a variety of hybrid phonon modes arise in the EEL spectrum due to the interaction between polarization charges in the particle and film. Mirror charge effects and phonon mode hybridization are the active mechanisms acting on dielectric and metallic-type films, respectively. Furthermore, processes beyond dipole-dipole interactions are required to describe the sphere-film coupling.

Localized surface phonon response↗
NASA NTRS2009

Gratings Fabricated on Flat Surfaces and Reproduced on Non-Flat Substrates

A method has been developed for fabricating gratings on flat substrates, and then reproducing the groove pattern on a curved (concave or convex) substrate and a corresponding grating device. First, surface relief diffraction grating grooves are formed on flat substrates. For example, they may be fabricated using photolithography and reactive ion etching, maskless lithography, holography, or mechanical ruling. Then, an imprint of the grating is made on a deformable substrate, such as plastic, polymer, or other materials using thermoforming, hot or cold embossing, or other methods. Interim stamps using electroforming, or other methods, may be produced for the imprinting process or if the same polarity of the grating image is required. The imprinted, deformable substrate is then attached to a curved, rigid substrate using epoxy or other suitable adhesives. The imprinted surface is facing away from the curved rigid substrate. As an alternative fabrication method, after grating is imprinted on the deformable substrate as described above, the grating may be coated with thin conformal conductive layer (for example, using vacuum deposition of gold). Then the membrane may be mounted over an opening in a pressured vessel in a manner of a membrane on a drum, grating side out. The pressure inside of the vessel may be changed with respect to the ambient pressure to produce concave or convex membrane surface. The shape of the opening may control the type of the surface curvature (for example, a circular opening would create spherical surface, oval opening would create toroidal surface, etc.). After that, well-known electroforming methods may be used to create a replica of the grating on the concave or convex membrane. For example, the pressure vessel assembly may be submerged into an electro-forming solution and negative electric potential applied to the metal coated membrane using an insulated wire. Positive electric potential may be then applied to a nickel or other metal plate submerged into the same solution. Metal ions would transfer from the plate through the solution into the membrane, producing high fidelity metal replica of the grating on the membrane. In one variation, an adhesive may be deposited on the deformable substrate, and then cured without touching the rigid, curved substrate. Edges of the deformable substrate may be attached to the rigid substrate to ensure uniform deformation of the deformable substrate. The assembly may be performed in vacuum, and then taken out to atmospheric pressure conditions to ensure that no air is trapped between the deformable and rigid substrates. Alternatively, a rigid surface with complementary curvature to the rigid substrate may be used to ensure uniform adhesion of the deformable substrate to the rigid substrate. Liquid may be applied to the surface of the deformable substrate to uniformly distribute pressure across its surface during the curing or hardening of the adhesive, or the film may be pressed into the surface using a deformable object or surface. After the attachment is complete, the grooves may be coated with reflective or dielectric layers to improve diffraction efficiency.

Content, David↗
NASA NTRS2007

Plant Productivity and Characterization of Zeoponic Substrates after Three Successive Crops of Radish (Raphanus sativus L.)

The National Aeronautics and Space Administration (NASA) has developed a zeolite-based synthetic substrate, termed zeoponics. The zeoponic substrate (consisting of NH4(-) and K-exchanged clinoptilolite, synthetic apatite, and dolomite) provides all of the plant-essential nutrients through mineral dissolution and ion exchange, with only the addition of water. Previous studies have shown high productivity of wheat in zeoponic substrates; however, no experiments have been conducted on other crops. The objective of this study was to determine the productivity and nutrient uptake of radish (Raphanus sativus L.) grown in zeoponic substrates with three successive crops in the same substrate. Radish was chosen because of its sensitivities to NH4(+). Average fresh weights of edible roots were similar for radish grown in zeoponic substrates watered with deionized H2O (10.97 g/plant) and in potting mix control substrate irrigated with nutrient solution (10.92 g/plant). Average fresh weight production of edible roots for radish grown in same zeoponic substrate increased in yield over time with the lowest yield in the first crop (7.10 g/plant) and highest in the third crop (13.90 g/plant). The Ca plant tissue levels in radishes (1.8-2.9 wt. %) grown in zeoponic substrates are lower than the suggested sufficient range of 3.0-4.5 wt. % Ca; however, the Ca level is highest (2.9 wt. %) in radishes grown in the third crop in the same zeoponic substrates. The higher radish yield in the third crop was attributed to a reduction in an NH4(-) induced Ca deficiency that has been previously described for wheat grown in zeoponic substrates. The P levels in plant tissues of radish grown in the zeoponic substrates ranged from 0.94-1.15 wt. %; which is slightly higher than the sufficient levels of 0.3-0.7 wt. %. With the exception of Ca and P, other macronutrient and micronutrient levels in radish grown in zeoponic substrates were well within the recommended sufficient ranges. After three successive crops of radish growth, the zeoponic substrates had 52% of the original NH4(-)N and 78% of the original K remaining on zeolite exchange sites. Zeoponic substrates are capable of long-term productivity of radishes for space.

Gruener, J. E.↗
DOE OSTI2025

A Modified DBC Substrate Improving Thermal Performance for Confined Space Applications

High-power modules use substrates to house the semiconductor device and for electrical insulation. These substrates are constructed with thermally conductive dielectric material sandwiched between two metals to extract heat from semiconductor chips. Thus, the required cooling performance of a power module is linked to the substrate’s thermal performance and can vary based on the substrate technologies. Here, in this study, five substrate technologies were evaluated for space-restricted applications: direct-bonded copper (DBC), an insulated metal substrate (IMS), a thermally annealed pyrolytic graphite (TPG)-based IMS, DBC-based double-sided cooling, and direct-bonded aluminum (DBA) where the heat sink is directly attached without thermal interface materials (TIMs). The finite element (FE) analysis results suggest that the popular DBC substrate has thermal performance better than that of the other substrates for space-constrained applications. To further improve the thermal performance, a modified DBC substrate was proposed where a copper block was added between the semiconductor and the DBC substrate to achieve heat spreading underneath the chip. The modified DBC performance was then compared with the aforementioned substrates and the results showed significant thermal performance improvement. The results were verified with experimental results where the proposed substrate showed 20% more loss handling capability compared to an identical DBC substrate.

42 ENGINEERING↗
NASA NTRS2007

Wafer bonded virtual substrate and method for forming the same

A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Atwater, Jr., Harry A.↗
NASA NTRS2003

Nitrification in a zeoponic substrate

Clinoptilolite is a zeolite mineral with high cation exchange capacity used in zeoponic substrates that have been proposed as a solid medium for growing plants or as a fertilizer material. The kinetics of nitrification has not been measured for NH4+ saturated zeoponic substrate. Experiments were conducted to evaluate the production of NO2- and NO3-, and nitrifier populations in zeoponic substrates. Small columns were filled with zeoponic substrate inoculated with a commercial inoculum or soil enrichment culture of nitrifying bacteria. In addition to column studies, a growth chamber study was conducted to evaluate the kinetics of nitrification in zeoponic substrates used to grow radishes (Raphanus sativus L.). The zeoponic substrate provided a readily available source of NH4+, and nitrifying bacteria were active in the substrate. Ammonium oxidation rates in column studies ranged from 5 to 10 micrograms N g-1 substrate h-1, and NO2- oxidation rates were 2 to 9.5 micrograms N g-1 substrate h-1. Rates determined from the growth chamber study were approximately 1.2 micrograms N g-1 substrate h-1. Quantities of NH4+ oxidized to NO2- and NO3- in inoculated zeoponic substrate were in excess of plant up-take. Acidification as a result of NH4+ oxidation resulted in a pH decline, and the zeoponic substrate showed limited buffering capacity.

NASA Discipline Life Support Systems↗
NASA NTRS2005

X-Ray Fluorescence Solvent Detection at the Substrate-Adhesive Interface

With environmental regulations limiting the use of volatile organic compounds, low-vapor pressure solvents have replaced traditional degreasing solvents for bond substrate preparation. When used to clean and prepare porous bond substrates such as phenolic composites, low vapor pressure solvents can penetrate deep into substrate pore networks and remain there for extended periods. Trapped solvents can interact with applied adhesives either prior to or during cure, potentially compromising bond properties. Currently, methods for characterizing solvent time-depth profiles in bond substrates are limited to bulk gravimetric or sectioning techniques. While sectioning techniques such as microtome allow construction of solvent depth profiles, their depth resolution and reliability are limited by substrate type. Sectioning techniques are particularly limited near the adhesive-substrate interface where depth resolution is further limited by adhesive-substrate hardness and, in the case of a partially cured adhesive, mechanical properties differences. Additionally, sectioning techniques cannot provide information about lateral solvent diffusion. Cross-section component mapping is an alternative method for measuring solvent migration in porous substrates that eliminates the issues associated with sectioning techniques. With cross-section mapping, the solvent-wiped substrate is sectioned perpendicular rather than parallel to the wiped surface, and the sectioned surface is analyzed for the solvent or solvent components of interest using a two-dimensional mapping or imaging technique. Solvent mapping can be performed using either direct or indirect methods. With a direct method, one or more solvent components are mapped using red or Raman spectroscopy together with a moveable sample stage and/or focal plane array detector. With an indirect method, an elemental "tag" not present in the substrate is added to the solvent before the substrate is wiped. Following cross sectioning, the tag element can then be mapped by its characteristic x-ray emission using either x-ray fluorescence, or electron-beam energy-and wavelength-dispersive x-ray spectrometry. The direct mapping techniques avoid issues of different diffusion or migration rates of solvents and elemental tags, while the indirect techniques avoid spectral resolution issues in cases where solvents and substrates have adjacent or overlapping peaks. In this study, cross-section component indirect mapping is being evaluated as a method for measuring migration of d-limonene based solvents in glass-cloth phenolic composite (GCP) prior to and during subsequent bonding and epoxy adhesive cure.

Wurth, Laura↗
NASA NTRS2003

Process for Smoothing an Si Substrate after Etching of SiO2

A reactive-ion etching (RIE) process for smoothing a silicon substrate has been devised. The process is especially useful for smoothing those silicon areas that have been exposed by etching a pattern of holes in a layer of silicon dioxide that covers the substrate. Applications in which one could utilize smooth silicon surfaces like those produced by this process include fabrication of optical waveguides, epitaxial deposition of silicon on selected areas of silicon substrates, and preparation of silicon substrates for deposition of adherent metal layers. During etching away of a layer of SiO2 that covers an Si substrate, a polymer becomes deposited on the substrate, and the substrate surface becomes rough (roughness height approximately equal to 50 nm) as a result of over-etching or of deposition of the polymer. While it is possible to smooth a silicon substrate by wet chemical etching, the undesired consequences of wet chemical etching can include compromising the integrity of the SiO2 sidewalls and undercutting of the adjacent areas of the silicon dioxide that are meant to be left intact. The present RIE process results in anisotropic etching that removes the polymer and reduces height of roughness of the silicon substrate to less than 10 nm while leaving the SiO2 sidewalls intact and vertical. Control over substrate versus sidewall etching (in particular, preferential etching of the substrate) is achieved through selection of process parameters, including gas flow, power, and pressure. Such control is not uniformly and repeatably achievable in wet chemical etching. The recipe for the present RIE process is the following: Etch 1 - A mixture of CF4 and O2 gases flowing at rates of 25 to 75 and 75 to 125 standard cubic centimeters per minute (stdcm3/min), respectively; power between 44 and 55 W; and pressure between 45 and 55 mtorr (between 6.0 and 7.3 Pa). The etch rate lies between approximately equal to 3 and approximately equal to 6 nm/minute. Etch 2 - O2 gas flowing at 75 to 125 stdcm3/min, power between 44 and 55 W, and pressure between 50 and 100 mtorr (between 6.7 and 13.3 Pa).

Turner, Tasha↗
NASA NTRS2009

Silicon Wafer-Scale Substrate for Microshutters and Detector Arrays

The silicon substrate carrier was created so that a large-area array (in this case 62,000+ elements of a microshutter array) and a variety of discrete passive and active devices could be mounted on a single board, similar to a printed circuit board. However, the density and number of interconnects far exceeds the capabilities of printed circuit board technology. To overcome this hurdle, a method was developed to fabricate this carrier out of silicon and implement silicon integrated circuit (IC) technology. This method achieves a large number of high-density metal interconnects; a 100-percent yield over a 6-in. (approximately equal to 15-cm) diameter wafer (one unit per wafer); a rigid, thermally compatible structure (all components and operating conditions) to cryogenic temperatures; re-workability and component replaceability, if required; and the ability to precisely cut large-area holes through the substrate. A method that would employ indium bump technology along with wafer-scale integration onto a silicon carrier was also developed. By establishing a silicon-based version of a printed circuit board, the objectives could be met with one solution. The silicon substrate would be 2 mm thick to survive the environmental loads of a launch. More than 2,300 metal traces and over 1,500 individual wire bonds are required. To mate the microshutter array to the silicon substrate, more than 10,000 indium bumps are required. A window was cut in the substrate to allow the light signal to pass through the substrate and reach the microshutter array. The substrate was also the receptacle for multiple unpackaged IC die wire-bonded directly to the substrate (thus conserving space over conventionally packaged die). Unique features of this technology include the implementation of a 2-mmthick silicon wafer to withstand extreme mechanical loads (from a rocket launch); integrated polysilicon resistor heaters directly on the substrate; the precise formation of an open aperture (approximately equal to 3x3cm) without any crack propagation; implementation of IR transmission blocking techniques; and compatibility with indium bump bonding. Although designed for the microshutter arrays for the NIRSpec instrument on the James Webb Space Telescope, these substrates can be linked to microshutter applications in the photomask generation and stepper equipment used to make ICs and microelectromechanical system (MEMS) devices.

Jhabvala, Murzy↗
DOE OSTI2024

Epitaxial Thin Film Growth on Recycled SrTiO 3 Substrates Toward Sustainable Processing of Complex Oxides

Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high‐quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO 3 (STO), MgO, LaAlO 3 , a‐Al 2 O 3, and many others. Recent successes in transferring these complex oxides as free‐standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost‐effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high‐resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre‐strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y 3 Fe 5 O 12 ) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high‐quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices.

pre-strained STO surfaces↗
DOE OSTI2025

Bacterial fitness for plant colonization is influenced by plant growth substrate

Despite advances in our understanding of bacterial plant colonization, the extent to which growth substrate influences the molecular mechanisms enabling bacteria to efficiently colonize plants remains poorly understood. To address this, we used randomly barcoded transposon mutagenesis sequencing (RB-TnSeq) in Paraburkholderia graminis OAS925, an efficient rhizosphere colonizer, and Brachypodium distachyon grown in six different substrates. Of the 382 rhizosphere colonization genes that we identified in OAS925, 348 genes (91.1%) are dependent on the growth substrate evaluated, and 34 genes (8.9%) are shared across all the substrates. Both the core and substrate-dependent colonization genes are from multiple functional categories, demonstrating the multifaceted and major impact that plant growth substrate has on bacterial colonization. The identified colonization genes and their varied importance across plant growth substrates could not be readily explained by differences in root exudate profiles, suggesting that the substrate environment itself plays an outsized role in the ability of a bacterium to colonize the rhizosphere. Our data confirm that bacterial fitness for plant colonization is strongly influenced by plant growth substrate type and highlights the importance of taking this parameter into consideration when engineering bacterial strains for improved host colonization.

Paraburkholderia↗
DOE OSTI2024

Stripe and bubble ratchets on asymmetric substrates

We show that various nonmonotonic ratchet effects can arise when mesophase pattern-forming systems, which exhibit anisotropic crystal, stripe, and bubble regimes, are coupled to one-dimensional asymmetric substrates under ac driving. The patterns emerge in the absence of a substrate when the ratio of attraction to repulsion is varied for particles with competing short-range attraction and long-range repulsion potentials. In the presence of the substrate, we find that the ratchet efficiency varies nonmonotonically with increasing attraction, depending upon how well the mesophase morphology matches the substrate spacing and periodicity. For strong repulsion, there is a weak but finite ratchet effect, while at intermediate attraction, there is a robust ratchet effect in which the system forms stripes aligned with the substrate symmetry direction. For strong attraction, large bubbles appear that have weak or no ratchet effects when the bubble width exceeds the substrate lattice spacing, causing the bubble to be only weakly coupled to the substrate. For very strong attraction, small bubbles form and undergo a strong ratchet effect with an efficiency that oscillates as a function of ac drive amplitude. Although the small bubble regime is a strongly correlated regime in which each bubble contains many particles, the system behaves as if it is in a single-particle regime since the bubble width is much smaller than the substrate lattice spacing. We map out the different rectification phases as a function of the pattern morphology, substrate strength, and ac drive amplitude. The pronounced ratchet effects that we observe in some regimes can be exploited for pattern sorting in hard and soft matter systems. Published by the American Physical Society 2024

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Dynamic asymmetric strain imprinted into substrates by an oxide thin film

In film-substrate systems, the substrate role is often considered to be limited to providing static mechanical constraints. Dynamic film-substrate interactions when a structural change in the film modifies the substrate are generally disregarded. Here, using combined x-ray and electron microscopies, we observed that an electrically induced filament in a vanadium dioxide film created strong asymmetric strain in an underlying sapphire substrate. This asymmetric substrate strain fed back into the film and defined the filament expansion direction, revealing the importance of film-substrate dynamic interactions in determining film functionality. Furthermore, the strain imprint propagated at least tens of micrometers deep into the substrate, exceeding the film thickness by more than 200-fold, potentially enabling substrate functionalization as an active mechanical coupling media in three-dimensional integrated microelectronic architectures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Faur, Mircea↗