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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Spin-Transfer Torque in Altermagnets with Magnetic Textures

We predict the existence of anisotropic spin-transfer torque effect in textured altermagnets. To this end, we generalize the Zhang-Li torque to incorporate the symmetry associated with prototypical 𝑑-wave altermagnets and identify the spin-splitter adiabatic and nonadiabatic torques. Applying our results to domain wall dynamics induced by spin-transfer torque, we find that, in certain regimes, the spin-splitter adiabatic torque can induce domain wall precession, significantly slowing down domain wall motion. The response of the domain wall also becomes anisotropic, reflecting the 𝑑-wave symmetry of the altermagnet. Furthermore, we observe that the spin-splitter adiabatic torque modifies skyrmion dynamics, inducing anisotropic skyrmion Hall effect. Furthermore, the above phenomena can serve as a hallmark of altermagnetism in textured magnets, distinguishing it from the behavior of ordinary antiferromagnets.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Spin-Transfer-Torque Oscillator with an Antiferromagnetic Exchange-Coupled Composite Free Layer

We present an antiferromagnetically exchange-coupled composite (soft and hard layers) spin torque oscillator (AF-ECC STO) and demonstrate its operation via both analytical and micromagnetic modeling. The operation exploits the exchange field due to the antiferromagnetic coupling between soft and hard sublayers of the free layer as well as on the easy-plane anisotropy of the soft sublayer. Optimized AF-ECC STO structures can generate large-amplitude magnetization oscillations, which can be tuned over a broad frequency range with precessions mostly generated by the soft layer. We demonstrate that the AF-ECC STO structure offers flexibility in current control of the oscillation frequency and magnetization angle for realistic material parameters.

42 ENGINEERING↗
DOE OSTI2022

Unified theory of spin and charge in a ferromagnet

Here, we derive a unified theory of spin and charge degrees of freedom in a ferromagnet. The spin-transfer torque and spin electromotive force are examined from the coarse-grained perspective of collective coordinates. The resulting equations of motion reflect a balance of conservative, gyroscopic (Berry-phase), and dissipative forces. We then expand the space of collective coordinates by adding the electric charge. The adiabatic spin-transfer torque and spin electromotive force (emf) turn out to be a gyroscopic force; their nonadiabatic counterparts are a dissipative force.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Eigenvalue-Based Micromagnetic Analysis of Switching in Spin-Torque-Driven Structures

We present an eigenvalue-based approach for studying the magnetization dynamics in magnetic nanostructures driven by spintronic excitations, such as spin-transfer torque and spin-orbit torque. The approach represents the system dynamics in terms of normal oscillation modes (eigenstates) with corresponding complex eigenfrequencies. The dynamics is driven by a small number of active eigenstates and often considering just a single eigenstate is sufficient. We develop a perturbation theory that provides semianalytical dynamic solutions by using eigenstates for the case in the absence of damping and spintronic excitations as a basis. The approach provides useful insights into dynamics in such systems and allows solving several difficulties in their modeling, such as extracting the switching current in magnetic random-access memories and understanding switching mechanisms. We show that the presented approach directly predicts the critical switching current, i.e., switching current for an infinite time. The approach also provides solutions for the switching dynamics allowing the switching current to be obtained for a finite switching time, provided that the system symmetry is broken, e.g., by tilting the polarizer, so that switching by a finite pulse is possible.

42 ENGINEERING↗
DOE OSTI2021

A domain wall-magnetic tunnel junction artificial synapse with notched geometry for accurate and efficient training of deep neural networks

Inspired by the parallelism and efficiency of the brain, several candidates for artificial synapse devices have been developed for neuromorphic computing, yet a nonlinear and asymmetric synaptic response curve precludes their use for backpropagation, the foundation of modern supervised learning. Spintronic devices—which benefit from high endurance, low power consumption, low latency, and CMOS compatibility—are a promising technology for memory, and domain-wall magnetic tunnel junction (DW-MTJ) devices have been shown to implement synaptic functions such as long-term potentiation and spike-timing dependent plasticity. In this work, we propose a notched DW-MTJ synapse as a candidate for supervised learning. Using micromagnetic simulations at room temperature, we show that notched synapses ensure the non-volatility of the synaptic weight and allow for highly linear, symmetric, and reproducible weight updates using either spin transfer torque (STT) or spin–orbit torque (SOT) mechanisms of DW propagation. We use lookup tables constructed from micromagnetics simulations to model the training of neural networks built with DW-MTJ synapses on both the MNIST and Fashion-MNIST image classification tasks. Accounting for thermal noise and realistic process variations, the DW-MTJ devices achieve classification accuracy close to ideal floating-point updates using both STT and SOT devices at room temperature and at 400 K. Our work establishes the basis for a magnetic artificial synapse that can eventually lead to hardware neural networks with fully spintronic matrix operations implementing machine learning.

42 ENGINEERING↗
DOE OSTI2026

Magnus force induced magnetic diode effect in skyrmion systems

We show that skyrmions can exhibit a “magnetic diode effect,” where there is a nonreciprocal response in the transport when the magnetic field is reversed. This effect can be achieved for skyrmions moving in channels with a sawtooth potential on one side and a reversed sawtooth potential on the other side. We consider the cases of both spin-transfer torque (STT) and spin–orbit torque (SOT). When the magnetic field is held fixed, the velocity response of the skyrmion is the same for current applied in either direction for both torques, so there is no current diode effect. When the magnetic field is reversed, under STT driving the velocity of the skyrmion reverses and its absolute value changes. Under SOT driving, the velocity remains in the same direction but drops to a much lower value, resulting in negative differential conductivity. For a fixed current, we find a nonreciprocal skyrmion velocity as a function of the applied field’s sign, in analogy to the velocity–current curves observed in the usual diode effect. The nonreciprocity is generated by the Magnus force, which causes skyrmions to interact preferentially with one side of the channel. Since the channel sides have opposite asymmetry, a positive magnetic field can cause the skyrmion to interact with the “hard” asymmetry side of the channel, while a negative magnetic field causes the skyrmion to interact with the “easy” asymmetry side. This geometry could be used to create new kinds of magnetic-field-induced diode effects that can be harnessed in new types of skyrmion-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Absorption of transverse spin current in ferromagnetic NiCu: Dominance of bulk dephasing over spin-flip scattering

In ferromagnetic metals, transverse spin currents are thought to be absorbed via dephasing—i.e., destructive interference of spins precessing about the strong exchange field. Yet, due to the ultrashort coherence length of ≈1 nm in typical ferromagnetic thin films, it is difficult to distinguish dephasing in the bulk from spin-flip scattering at the interface. Here, to assess which mechanism dominates, we examine transverse spin-current absorption in ferromagnetic NiCu alloy films with reduced exchange fields. We observe that the coherence length increases with decreasing Curie temperature, as weaker dephasing in the film bulk slows down spin absorption. Moreover, nonmagnetic Cu impurities do not diminish the efficiency of spin-transfer torque from the absorbed spin current. Our findings affirm that the transverse spin current is predominantly absorbed by dephasing inside the nanometer-thick ferromagnetic metals, even with high impurity contents.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Electron-mediated entanglement of two distant macroscopic ferromagnets within a nonequilibrium spintronic device

Using the nascent concept of quantum spin-transfer torque, we demonstrate that a current pulse can be harnessed to entangle quantum localized spins of two spatially separated ferromagnets (FMs) which are initially unentangled. The envisaged setup is composed of a spin-polarizer (FM p ) and a spin-analyzer (FM a ) FM layers separated by a normal metal (NM) spacer. The injection of a current pulse into the device leads to a time-dependent superposition of many-body states characterized by a high degree of entanglement between the spin degrees of freedom of the two distant FM layers. The nonequilibrium dynamics are due to the transfer of spin angular momentum from itinerant electrons to the localized spins via a quantum spin-torque mechanism that remains active even for collinear but antiparallel arrangements of the FM p and FM a magnetizations (a situation in which the conventional spin torque is absent). We quantify the mixed-state entanglement generated between the FM layers by tracking the time evolution of the full density matrix and analyzing the build-up of the mutual logarithmic negativity over time. The effect of decoherence and dissipation in the FM layers due to coupling to bosonic baths at finite temperature, the use of multielectron current pulses, and the dependence on the number of spins are also considered in an effort to ascertain the robustness of our predictions under realistic conditions. Lastly, we propose a “current-pump–x-ray-probe” scheme, utilizing ultrafast x-ray spectroscopy, that can witness nonequilibrium and transient entanglement of the FM layers by extracting its time-dependent quantum Fisher information.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗
DOE OSTI2024

Electrical control of magnetism by electric field and current-induced torques

The remanent magnetization of ferromagnets has long been studied and used to store binary information. While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility of doing it by electrical means instead. In the 1990s, Slonczewski and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current generated by a first ferromagnet may be used to switch the magnetization of a second one. This discovery drove the development of spin-transfer-torque magnetic random-access memories (MRAMs). More recent fundamental research revealed other types of current-induced torques named spin-orbit torques (SOTs) and will lead to a new generation of devices including SOT MRAMs and skyrmion-based devices. Parallel to these advances, multiferroics and their magnetoelectric coupling, first investigated experimentally in the 1960s, experienced a renaissance. Dozens of multiferroic compounds with new magnetoelectric coupling mechanisms were discovered and high-quality multiferroic films were synthesized (notably of BiFeO 3 ), also leading to novel device concepts for information and communication technology such as the magnetoelectric spin-orbit (MESO) transistor. The story of the electrical switching of magnetization, which is discussed in this review, is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO transistors, microwave emitters, spin diodes, skyrmion-based devices, components for neuromorphics, etc.). This pas de deux has led to major scientific and technological breakthroughs in recent decades (such as the conceptualization of pure spin currents, the observation of magnetic skyrmions, and the discovery of spin-charge interconversion effects). As a result, this field has not only propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, in this review, recent advances in the control of magnetism by electric fields and by current-induced torques are covered. Fundamental concepts in these two directions are reviewed first, their combination is then discussed, and finally current various families of devices harnessing the electrical control of magnetic properties for various application fields are addressed. The review concludes by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dynamics of metastable contact soliton dissipative exchange flows in one-dimensional ferromagnetic channels

Dissipative exchange flows (DEFs) are large-amplitude boundary value solutions of ferromagnetic channels. In their low-injection limit, DEFs reduce to spin superfluids. However, in the strong injection limit, nonlinearities dominate close to the injection site and a soliton is formed; this solution has been termed a contact soliton dissipative exchange flow (CS-DEF). Here, in this work, we numerically investigate CS-DEF solutions in a moderate injection regime and a finite injection width. We find a solution where two metastable solitons coexist in the injection region. This solution is metastable in the sense that any perturbation to the system will eject one of the solitons out of the injection region. Moreover, soliton dynamics can be excited when two injection regions are separated by a certain distance. We find that the ensuing DEF between the solitons induces a steady-state dynamics in which metastable solitons are continually ejected and nucleated. Furthermore, and depending on the relative signs of the spin injections, the soliton dynamics possess a particular handedness and frequency related to the spin transfer torque delivered by the DEF. Our results provide insights into the transport of spin current by DEFs - where the interaction between DEFs and solitons suggests a mechanism for detaching contact-solitons from the injection boundary. Although this study focuses on the "nonlocal" interaction between solitons, it may lead to the investigation of new mechanisms for inserting solitons in a DEF, e.g., for discrete motion and transport of information over long distances.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magnetic tunnel junction random number generators applied to dynamically tuned probability trees driven by spin orbit torque

Abstract Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNGs) can consume orders of magnitude less energy per bit than CMOS pseudo-RNGs. Here, we numerically investigate with a macrospin Landau–Lifshitz-Gilbert equation solver the use of pMTJs driven by spin–orbit torque to directly sample numbers from arbitrary probability distributions with the help of a tunable probability tree. The tree operates by dynamically biasing sequences of pMTJ relaxation events, called ‘coinflips’, via an additional applied spin-transfer-torque current. Specifically, using a single, ideal pMTJ device we successfully draw integer samples on the interval [0, 255] from an exponential distribution based on p -value distribution analysis. In order to investigate device-to-device variations, the thermal stability of the pMTJs are varied based on manufactured device data. It is found that while repeatedly using a varied device inhibits ability to recover the probability distribution, the device variations average out when considering the entire set of devices as a ‘bucket’ to agnostically draw random numbers from. Further, it is noted that the device variations most significantly impact the highest level of the probability tree, with diminishing errors at lower levels. The devices are then used to draw both uniformly and exponentially distributed numbers for the Monte Carlo computation of a problem from particle transport, showing excellent data fit with the analytical solution. Finally, the devices are benchmarked against CMOS and memristor RNGs, showing faster bit generation and significantly lower energy use.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Tilted spin current generated by the collinear antiferromagnet ruthenium dioxide

Symmetry plays a central role in determining the polarization of spin currents induced by electric fields. It also influences how these spin currents generate spin-transfer torques in magnetic devices. Here, we show that an out-of-plane damping-like torque can be generated in ruthenium oxide (RuO 2 )/permalloy devices when the Néel vector of the collinear antiferromagnet RuO 2 is canted relative to the sample plane. By measuring characteristic changes in all three components of the electric-field-induced torque vector as a function of the angle of the electric field relative to the crystal axes, we find that the RuO 2 generates a spin current with a well-defined tilted spin orientation that is approximately parallel to the Néel vector. A maximum out-of-plane damping-like spin torque efficiency per unit electric field of 7±1 × 10 3 Ω -1 m -1 is measured at room temperature. Here, the observed angular dependence indicates that this is an antiferromagnetic spin Hall effect with symmetries that are distinct from other mechanisms of spin-current generation reported in antiferromagnetic and ferromagnetic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Nanoprobe Based Information Processing: Nanoprobe‐Electronics

Abstract With computational architectures becoming data‐centric and with the rise of in‐memory computing, the role of memory will be ever more crucial. In turn, storing massive amount of data demands for ultra‐low power and non‐volatile types necessitating new memory technologies. Here, a controllable nanoelectromechanical (NEM) spin memory is proposed for compact nonvolatile memory arrays. It combines the advantages of both nanomechanical and spin‐transfer torque (STT) magnetic memory devices to overcome fundamental scalability roadblocks of non‐hybrid alternatives. The hybrid system paves the way to a new memory technology in the regime of sub‐10‐nm lateral size with a sub‐1‐MA cm −2 switching energy.

Yi, Bao↗
DOE OSTI2023

Machine learning nonequilibrium electron forces for spin dynamics of itinerant magnets

Abstract We present a generalized potential theory for conservative as well as nonconservative forces for the Landau-Lifshitz magnetization dynamics. Importantly, this formulation makes possible an elegant generalization of the Behler-Parrinello machine learning (ML) approach, which is a cornerstone of ML-based quantum molecular dynamics methods, to the modeling of force fields in adiabatic spin dynamics of out-of-equilibrium itinerant magnetic systems. We demonstrate our approach by developing a deep-learning neural network that successfully learns the electron-mediated exchange fields in a driven s-d model computed from the nonequilibrium Green’s function method. We show that dynamical simulations with forces predicted from the neural network accurately reproduce the voltage-driven domain-wall propagation. Our work also lays the foundation for ML modeling of spin transfer torques and opens a avenue for ML-based multi-scale modeling of nonequilibrium dynamical phenomena in itinerant magnets and spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Current-induced dynamics and tunable spectra of a magnetic chiral bobber

Chiral bobber (ChB) is an exotic three-dimensional topological texture in chiral magnets. It is composed of a Bloch-point singularity and a skyrmion tube; the incommensurate characteristic length scales of these two components would thus lead to novel dynamics of a ChB. In this work, we report the current-induced motion and the accompanying Hall effect of a ChB. Surprisingly, we find that the Hall angle of a ChB can be tuned in a wide range from -90 ° to positive angles. A further study of spin-wave excitations identified high-frequency resonant modes, which are related to the velocity of ChB and lattice constants. The excited frequency can be two orders of magnitude higher than that of skyrmions. The broad ranges of Hall angles and frequency spectra could boost the development of spintronic devices using topological textures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Neuromorphic Accelerator for Deep Spiking Neural Networks with NVM Crossbar Arrays

In this paper, we present a scalable digital hardware accelerator based on non-volatile memory arrays capable of realizing deep convolutional spiking neural networks (SNNs). Our design studies are conducted using a compact model for spin-transfer torque random access memory (STT-RAM) devices. Large networks are realized by tiling multiple cores which communicate by transmitting spike packets via an on-chip routing network. Compared to an equivalent SRAM based core design, we show that the STT-RAM based design achieves nearly 15X higher GSOPS (Synaptic Operations per Second) per Watt per mm 2 making it a promising platform for realizing systems with significant area and power limitations.

Kulkarni, Shruti↗