Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “spin caloritronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

A perspective on two-dimensional van der Waals opto-spin-caloritronics

Two-dimensional (2D) van der Waals magnetic semiconductors displaying controllable ferromagnetism at room temperature form atomically sharp interfaces with various substrates. Such heterostructures create platforms for understanding spin-dependent phenomena across interfaces and surfaces for high-performance technological applications. Combining these 2D magnets with light and the spin Seebeck effect (SSE) in-state-of-the-art thermo-opto-spin studies forms a new paradigm in the field of spin-caloritronics that harnesses light as the new heat. In this Perspective, we detail how to exploit recent advances in 2D van der Waals materials to boost the SSE and propose a new strategy for optically controlled SSE in 2D magnetic semiconductor-based heterostructures with the intent to establish the research thrust of “opto-spin-caloritronics.”

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Interfacial thermal transport in spin caloritronic material systems

Interfaces often govern the thermal performance of nanoscale devices and nanostructured materials. As a result, accurate knowledge of thermal interface conductance is necessary to model the temperature response of nanoscale devices or nanostructured materials to heating. Here, we report the thermal boundary conductance between metals and insulators that are commonly used in spin-caloritronic experiments. We use time-domain thermoreflectance to measure the interface conductance between metals such as Au, Pt, Ta, Cu, and Al with garnet and oxide substrates, e.g., NiO, yttrium iron garnet (YIG), thulium iron garnet (TmIG), Cr 2 O 3 , and sapphire. We find that, at room temperature, the interface conductance in these types of material systems range from 50 to 300 MW m –2 K –1 . Furthermore, we also measure the interface conductance between Pt and YIG at temperatures between 80 and 350 K. At room temperature, the interface conductance of Pt/YIG is 170 MW m –2 K –1 and the Kapitza length is ~40 nm. A Kapitza length of 40 nm means that, in the presence of a steady-state heat current, the temperature drop at the Pt/YIG interface is equal to the temperature drop across a 40-nm-thick layer of YIG. At 80 K, the interface conductance of Pt/YIG is 60 MW m –2 K –1 , corresponding to a Kapitza length of ~300 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Surface magnetic anisotropy-mediated spin Hall magnetoresistance and spin Seebeck effects in a YIG/Pt heterostructure

The role of magnon-phonon coupling in the low-temperature behavior of the spin Seebeck effect (SSE) in YIG/Pt has been puzzling for more than a decade. Here, to elucidate the origin of the anomalous peak around 80 K, we investigate the temperature evolution of SSE, spin Hall magnetoresistance (SMR), and magnetic anisotropy in the same YIG/Pt heterostructure. We find that these effects, along with magnetic damping, show the peaks at the same temperature (~80 K). This simultaneous occurrence, where no heat is applied in the case of SMR, rules out the phonon-magnon drag related origin of SSE in the YIG/Pt system. We further show that the intrinsic surface anisotropy behavior in YIG is responsible for controlling the SSE, SMR, and magnetic damping in the YIG/Pt structure. Our findings not only help to understand these effects fundamentally but also provide an effective way for improving them by manipulating the surface magnetic anisotropy for spin caloritronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nernst–Ettingshausen effect in thin Pt and W films at low temperatures

As spin caloritronic measurements become increasingly common techniques for characterizing material properties, it is important to quantify potentially confounding effects. We report measurements of the Nernst–Ettingshausen response from room temperature to 5 K in thin film wires of Pt and W, metals commonly used as inverse spin Hall detectors in spin Seebeck characterization. Johnson–Nyquist noise thermometry is used to assess the temperature change in the metals with heater power at low temperatures, and the thermal path is analyzed via finite-element modeling. The Nernst–Ettingshausen response of W is found to be approximately temperature-independent, while the response of Pt increases at low temperatures. Furthermore, these results are discussed in the context of theoretical expectations and the possible role of magnetic impurities in Pt.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Observation of Vector Spin Seebeck Effect in a Noncollinear Antiferromagnet

Spintronic phenomena to date have been established in magnets with collinear moments, where the spin injection through the spin Seebeck effect (SSE) is always along the out-of-plane direction. Here, we report the observation of a vector SSE in a noncollinear antiferromagnet (AF) LuFeO 3 , where temperature gradient along the out-of-plane and also the in-plane directions can both inject a pure spin current and generate a voltage in the heavy metal via the inverse spin Hall effect (ISHE). We show that the thermovoltages are due to the magnetization from canted spins in LuFeO 3 . Furthermore, in contrast to the challenges of generating, manipulating, and detecting spin current in collinear AFs, the vector SSE in LuFeO 3 is readily viable in zero magnetic field and can be controlled by a small magnetic field of about 150 Oe at room temperature. Furthermore, the noncollinear AFs expand new realms for exploring spin phenomena and provide a new route to low-field antiferromagnetic spin caloritronics and magnonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Vector spin Seebeck effect and spin swapping effect in antiferromagnetic insulators with non-collinear spin structure

Antiferromagnets (AFs) are prospective for next-generation high-density and high-speed spintronic applications due to their negligible stray field and ultrafast spin dynamics, notwithstanding the challenges in detecting and manipulating AF order with no magnetization (M = 0). Among the AFs, non-collinear AFs are of particular interest because of their unique properties arising from the non-collinear spin structure and the small magnetization M. In this work, we describe the recently observed vector spin Seebeck effect in non-collinear LuFeO 3 , where the magneto-thermovoltage under an in-plane temperature gradient, not previously observed, is consistent with the predicted spin swapping effect. Our results shed light on the importance of the non-collinear spin structure in the emerging spin phenomena in non-collinear AFs and offer a new class of materials for AF spintronics and spin caloritronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Selected magnetoelectrical phonon stiffening in Cr 2 ⁢O 3

A thorough understanding of lattice dynamics, particularly how they couple with spin through spin-phonon interactions, is crucial for pioneering new spin-caloritronic applications. Here, despite extensive studies on Cr 2 ⁢O 3 , the origin of nonlinear thermal expansions and the unusual stiffening of optical phonon modes is still elusive. Through inelastic neutron scattering and atomistic calculations, we found that these behaviors can be attributed to the renormalization of electron states owing to the magnetic transition, and we ruled out the effects from thermal expansion, phonon anharmonicity, magnetostriction, or electron-phonon interactions. Importantly, our quantitative modeling suggests that the common belief that dynamic spin-phonon interactions are the origin of anomalous phonon energy stiffening in magnetic compounds does not apply in Cr 2 ⁢O 3 .

DFT+U↗
DOE OSTI2023

Transition Metal Dichalcogenides: Making Atomic‐Level Magnetism Tunable with Light at Room Temperature

Abstract The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D‐DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers ( M ‐doped TX 2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin‐caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D‐TMD DMSs and heterostructures. By combining magneto‐LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V‐doped TMD monolayers (e.g., V‐WS 2 , V‐WSe 2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D‐TMD heterostructures (VSe 2 /WS 2 , VSe 2 /MoS 2 ), the significance of proximity, charge‐transfer, and confinement effects in amplifying light‐mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron–hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D‐TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next‐generation magneto‐optic nanodevices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evidence for spin swapping in an antiferromagnet

Antiferromagnetic insulators offer strategic advantages in spintronic applications because of their negligible stray fields and ultrafast magnetic dynamics. Control of their magnetization and readout of their magnetic state are essential for these applications but remain challenging. In this work, we report the electrical detection of room-temperature magnetization switching in the canted antiferromagnetic insulator LaFeO 3 , capped with a Pt or W overlayer. The observation of a large magneto-thermovoltage with an in-plane temperature gradient suggests that the mechanism is the swapping of spin currents in the antiferromagnet. This effect provides a sensitive electrical probe of the tiny net magnetization in the insulator, which can be manipulated by a magnetic field on the order of 10 mT. Our results highlight a new material class of insulating canted antiferromagnets for spintronics and spin caloritronics and suggests a method for the electrical readout of magnetic signals in an antiferromagnetic insulator. Electrical readout of the state of an antiferromagnet is an important goal for spintronic applications. Now, detection of the electrical voltage created by a thermal gradient in a canted antiferromagnet suggests a route for achieving this goal.

42 ENGINEERING↗
DOE OSTI2022

Low-temperature nanoscale heat transport in a gadolinium iron garnet heterostructure probed by ultrafast x-ray diffraction

Time-resolved x-ray diffraction has been used to measure the low-temperature thermal transport properties of a Pt/Gd3Fe5O12//Gd3Ga5O12 metal/oxide heterostructure relevant to applications in spin caloritronics. A pulsed femtosecond optical signal produces a rapid temperature rise in the Pt layer, followed by heat transport into the Gd3Fe5O12 (GdIG) thin film and the Gd3Ga5O12 (GGG) substrate. The time dependence of x-ray diffraction from the GdIG layer was tracked using an accelerator-based femtosecond x-ray source. The ultrafast diffraction measurements probed the intensity of the GdIG (1 −1 2) x-ray reflection in a grazing-incidence x-ray diffraction geometry. The comparison of the variation of the diffracted x-ray intensity with a model including heat transport and the temperature dependence of the GdIG lattice parameter allows the thermal conductance of the Pt/GdIG and GdIG//GGG interfaces to be determined. Complementary synchrotron x-ray diffraction studies of the low-temperature thermal expansion properties of the GdIG layer provide a precise calibration of the temperature dependence of the GdIG lattice parameter. The interfacial thermal conductance of the Pt/GdIG and GdIG//GGG interfaces determined from the time-resolved diffraction study is of the same order of magnitude as previous reports for metal/oxide and epitaxial dielectric interfaces. The thermal parameters of the Pt/GdIG//GGG heterostructure will aid in the design and implementation of thermal transport devices and nanostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Origin of transverse voltages generated by thermal gradients and electric fields in ferrimagnetic-insulator/heavy-metal bilayers

We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm 3 Fe 5 O 12 /W and Tm 3 Fe 5 O 12 /Pt) to corresponding electrically driven transverse resistances at and above room temperature. We find for Tm 3 Fe 5 O 12 /W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm 3 Fe 5 O 12 /Pt the ratio of the electrically driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient signals, a result which is very different from expectations for a SMR-based mechanism alone. Here, we ascribe this difference to a proximity-induced magnetic layer at the Tm 3 Fe 5 O 12 /Pt interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Geometric origin of the intrinsic transverse spin transport in a canted-antiferromagnet/heavy-metal heterostructure

We theoretically study the conditions under which an intrinsic spin Nernst effect–a transverse spin current induced by an applied temperature gradient–can occur in a canted-antiferromagnet insulator, such as LaFeO 3 and other materials of the same family. The spin Nernst effect may provide a microscopic mechanism for an experimentally observed anomalous thermovoltage in LaFeO 3 /Pt heterostructures, where spin is transferred across the insulator/metal interface when a temperature gradient is applied to LaFeO 3 parallel to the interface. We find that LaFeO 3 exhibits an intrinsic spin Nernst effect when inversion symmetry is broken on the axes parallel to both the applied temperature gradient and the direction of spin transport, which can result in a spin injection across the insulator/metal interface. Furthermore, our paper provides a general derivation of a symmetry-breaking-induced spin Nernst effect, which may open a path to engineering a finite spin Nernst effect in systems where it would otherwise not arise.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Exploiting Spin Fluctuations for Enhanced Pure Spin Current

We demonstrate the interplay of pure spin current, spin-polarized current, and spin fluctuation in 3d Ni x Cu 1–x . By tuning the compositions of the Ni x Cu 1–x alloys, we separate the effects due to the pure spin current and spin-polarized current. By exploiting the interaction of spin current with spin fluctuation in suitable Ni-Cu alloys, we obtain an unprecedentedly high spin Hall angle of 46%, about 5 times larger than that in Pt, at room temperature. Furthermore, we show that spin-dependent thermal transport via anomalous Nernst effect can serve as a sensitive magnetometer to electrically probe the magnetic phase transitions in thin films with in-plane anisotropy. As a result, the enhancement of spin Hall angle by exploiting spin current fluctuation via composition control makes 3d magnets functional materials in charge-to-spin conversion for spintronic application.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Exchange bias and interface-related effects in two-dimensional van der Waals magnetic heterostructures: Open questions and perspectives

The exchange bias (EB) effect is known as a fundamentally and technologically important magnetic property of a magnetic bilayer film. It is manifested as a horizontal shift in a magnetic hysteresis loop of a film subject to cooling in the presence of a magnetic field. The EB effect in van der Waals (vdW) heterostructures offers a novel approach for tuning the magnetic properties of the newly discovered single-layer magnets, as well as adds a new impetus to magnetic vdW heterostructures. Indeed, intriguing EB effects have recently been reported in a variety of low-dimensional vdW magnetic systems ranging from a weakly interlayer-coupled vdW magnet (e.g., Fe 3 GeTe 2 ) to a bilayer composed of two different magnetic vdW materials (e.g., Fe 3 GeTe 2 /CrCl 3 , Fe 3 GeTe 2 /FePS 3 , Fe 3 GeTe 2 /MnPS 3 , Fe 3 GeTe 2 /CrSe, Fe 3 GeTe 2 /CrOCl, Fe 3 GeTe 2 /CoPc, Fe 5 GeTe 2 /FePS 3 ), to bilayers of two different vdW defective magnets (e.g., VSe 2 /MoS 2 ), or to metallic ferromagnet/vdW defective magnet interfaces (e.g., Fe/MoS 2 ). Despite their huge potential in spintronic device applications, the physical origins of the observed EB effects have remained elusive to researchers. Here, we present here a critical review of the EB effect and associated phenomena such as magnetic proximity (MP) in various vdW heterostructure systems and propose approaches to addressing some of the emerging fundamental questions.

2D magnets↗
DOE OSTI2021

Understanding and design of spin-driven thermoelectrics

While progress in thermoelectric materials based on the engineering of electronic and phononic characteristics is reaching a plateau, the addition of the spin degree of freedom has the potential to open a new landscape for alternative thermoelectric materials. Here, we present the concepts, current understanding, and guidelines for designing spin-driven thermoelectrics. We show that the interplay between the spin and heat currents in entropy transport via charge carriers can offer a path to enhance the electronic thermopower. The classical antiferromagnetic semiconductor manganese telluride (MnTe) is chosen as the case study due to its significant spin-mediated thermoelectric properties. We show that, although the spin-disorder scattering reduces the carrier mobility in magnetic materials, spin entropy, magnon, and paramagnon carrier drags can dominate and significantly enhance the thermoelectric power factor, and hence zT. Finally, several guidelines are drawn based on the current understanding for designing high-performance spin-driven thermoelectric materials.

42 ENGINEERING↗
DOE OSTI2023

Intrinsic Berry curvature driven anomalous Nernst thermopower in the semimetallic Heusler alloy CoFeVSb

Understanding of spin-heat coupling mechanisms and magnetothermoelectric phenomena, including the anomalous Nernst effect (ANE), in emergent quaternary Heusler alloys is of practical importance for applications in thermal management and energy harvesting. Here, we demonstrate an intrinsic Berry curvature mediated anomalous Nernst thermopower in CoFeVSb, which orders magnetically at high temperature ( T C ≈ 850 K ) with a large saturation magnetization of ≈ 2.2 μ B / f . u . at room temperature. We show that the electron-electron elastic and electron-magnon inelastic scattering dominate longitudinal electrical transport at low temperatures ( T ≤ 50 K ), whereas the electron-phonon and electron-magnon scatterings govern it at higher T . The longitudinal thermopower is resulted mainly from the diffusive contribution with a very large longitudinal Seebeck coefficient ( 42 μ V K - 1 at 395 K). The value of the anomalous Nernst coefficient ( S ANE ) for CoFeVSb at room temperature is 0.039 μ V K - 1 which is higher than the compressively strained SrRu O 3 film ( 0.03 μ V K - 1 ) as well as the spin gapless semiconductor CoFeCrGa ( 0.018 μ V K - 1 ). On lowering T , both the ordinary Nernst coefficient and carrier mobility increase but an opposite trend is found for S ANE . Our ab initio simulations reveal the topological semimetallic nature of CoFeVSb with a pair of Weyl points. These Weyl crossings result in a significant contribution to the Berry curvature, leading to an intrinsic anomalous Hall conductivity ( σ x y AHE ) of ≈ 85 S/cm, which matches well with experiment (77 S/cm at 2 K). Our experimental findings and ab initio calculations support the dominance of the intrinsic Berry curvature in the observed ANE. The ratio of σ x y AHE to the transverse anomalous thermoelectric conductivity ( α x y ANE ) shows an increasing trend with T attaining a sizable fraction of k B e ( ≈ 0.35 k B e ) at room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Spin Seebeck effect at low temperatures in the nominally paramagnetic insulating state of vanadium dioxide

The low temperature monoclinic, insulating phase of vanadium dioxide is ordinarily considered nonmagnetic, with dimerized vanadium atoms forming spin singlets, though paramagnetic response is seen at low temperatures. Here, we find a nonlocal spin Seebeck signal in VO 2 films that appears below 30 K and that increases with a decrease in temperature. The spin Seebeck response has a nonhysteretic dependence on the in-plane external magnetic field. This paramagnetic spin Seebeck response is discussed in terms of prior findings on paramagnetic spin Seebeck effects and expected magnetic excitations of the monoclinic ground state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Emergence of asymmetric skew-scattering dominated anomalous Nernst effect in the spin gapless semiconductors Co 1+x Fe 1-x CrGa

Heusler alloy-based spin gapless semiconductors (SGSs) with very high Curie temperatures ( T C ) have recently gained enormous attention because of their unconventional electronic structures. They exhibit a nonzero band gap in one of the spin channels and a zero band gap in the other spin channel, making them an important class of materials for tunable spin transport. Here, we report the experimental observation of anomalous Nernst effect (ANE) in Co 1 + x Fe 1 - x CrGa ( x = 0 , 0.2, 0.4, and 0.5), which are the emerging quaternary Heusler alloy-based SGSs. While the electron-electron elastic scattering and the disorder-mediated weak localization effect play the major roles in electrical transport for all the samples at low temperatures, the magnon-drag effect was found to dominate the longitudinal thermoelectric transport. The ANE coefficient at room temperature increases from ≈ 0.018 μ V K - 1 for x = 0 to ≈ 0.063 μ V K - 1 for x = 0.5 , which is higher than that for Ni 81 Fe 19 and compressively strained SrRu O 3 films. Our analysis indicates that the observed ANE in these samples originates from asymmetric skew scattering of charge carriers.

36 MATERIALS SCIENCE↗