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The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.
Neutron detection is essential for identifying and monitoring nuclear materials and nuclear reactions. Most deployed neutron-detection systems rely on helium-3 ( 3 He) gas-filled tubes, which have been the standard technology for decades.
III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. Among III-nitrides, BN has another unique application as a solid-state neutron detector material because the isotope B-10 is among a few elements that have an unusually large interaction cross section with thermal neutrons. A record high thermal neutron detection efficiency of 60% has been achieved by B-10 enriched h-BN detectors of 100 μm in thickness in our group. However, direct detection of fast neutrons with energies above 1 MeV is highly challenging due to the extremely low interaction cross section of fast neutrons with matter. We report the successful attainment of 0.4 mm thick freestanding h-BN 4"-diameter wafers, which enabled the demonstration of h-BN fast neutron detectors capable of delivering a detection efficiency of 2.2% in response to a bare AmBe neutron source. Furthermore, it was shown that the energy information of incoming fast neutrons is retained in the neutron pulse-height spectra. A comparison of characteristics between h-BN fast and thermal neutron detectors is summarized. Neutron detectors are vital diagnostic instruments for nuclear and fusion reactor power and safety monitoring, oil field exploration, neutron imaging and therapy, as well as for plasma and material science research. With the outstanding attributes resulting from its ultrawide bandgap (UWBG), including the ability to operate at extreme conditions of high power, voltage, and temperature, the availability of h-BN UWBG semiconductor detectors with the capability of simultaneously detecting thermal and fast neutrons with high efficiencies is expected to open unprecedented applications that are not possible to attain by any other types of neutron detectors.
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Exposure of highly deuterated materials to a low-energy (nom. 2 MeV) photon beam resulted in nuclear activity of both the parent metals of hafnium and erbium and a witness material (molybdenum) mixed with the reactants. Gamma spectral analysis of all deuterated materials, ErD2.8+C36D74+Mo and HfD2+C36D74+Mo, showed that nuclear processes had occurred as shown by unique gamma signatures. For the deuterated erbium specimens, posttest gamma spectra showed evidence of radioisotopes of erbium ((163)Er and (171)Er) and of molybdenum ((99)Mo and (101)Mo) and by beta decay, technetium (99mTc and 101Tc). For the deuterated hafnium specimens, posttest gamma spectra showed evidence of radioisotopes of hafnium (180mHf and 181Hf) and molybdenum ((99)Mo and (101)Mo), and by beta decay, technetium ((99m)Tc and (101)Tc). In contrast, when either the hydrogenated or non-gas-loaded erbium or hafnium materials were exposed to the gamma flux, the gamma spectra revealed no new isotopes. Neutron activation materials showed evidence of thermal and epithermal neutrons. CR-39 solid-state nuclear track detectors showed evidence of fast neutrons with energies between 1.4 and 2.5 MeV and several instances of triple tracks, indicating (is) greater than 10 MeV neutrons. Further study is required to determine the mechanism causing the nuclear activity.
This project developed and demonstrated a new calibration approach for low-energy nuclear recoils in solid-state detectors based on neutron capture. Precise calibration in the sub-keV regime is a critical challenge across the HEP portfolio. Existing measurements show deviations and inconsistencies across methods. Neutron capture provides a complementary approach producing discrete recoils via γ cascades.
Fast neutron spectrometer combines helium filled proportional counters with solid-state detectors to achieve the properties of high efficiency, good resolution, rapid response, and effective gamma ray rejection.
We characterize the neutron detection efficiency of pixelated organic glass scintillator (OGS) arrays manufactured in two ways: an additive method in which the OGS is cast in place in a pixelated mold, and a subtractive method in which the scintillator is first cast as a large block before being cut in bars and bonded together to form the array. The cast-in-place array utilizes a mixture of “bis(9,9-dimethyl-9H-fluoren-2-yl)diphenylsilane” (P2), “tri([1,1'-biphenyl]-4-yl)(phenyl)silane” (PB3), and “4-bis(2-methylstyryl)benzene” (MSB), and 50% by weight of polystyrene is added to the mixture for subtractive manufactured array. We compare the performance of the OGS arrays to that of an EJ-299-33M plastic scintillator array that was manufactured using a subtractive process similar to that of the second OGS array.
The absorbed dose as a function of lineal energy was measured at the CERN-EC Reference-field Facility (CERF) using a 512-channel tissue equivalent proportional counter (TEPC), and neutron dose equivalent response evaluated. Although there are some differences, the measured dose equivalent is in agreement with that measured by the 16-channel HANDI tissue equivalent counter. Comparison of TEPC measurements with those made by a silicon solid-state detector for low linear energy transfer particles produced by the same beam, is presented. The measurements show that about 4% of dose equivalent is delivered by particles heavier than protons generated in the conducting tissue equivalent plastic. c2002 Elsevier Science Ltd. All rights reserved.
A small silicon p-n junction wafer, when coated with uranium 235, can be used as a compact fission probe for low power flux and power mapping. Because of the inverse relation between the magnitude of a neutron-induced fission pulse and the inherent capacitance of the detecting element (capacitance is proportional to area), the size, and hence the sensitivity, of the semiconductor detector has been limited. New developments in the field of semiconductor detectors have made it possible to fabricate large area detectors which are essentially free from the capacitance effect. However, preliminary results indicate that they are much more susceptible to radiation damage than the detectors described in this report and as such may not be suitable for flux mapping. increasing the sensitivity cannot be accomplished by simply fabricating a larger detector. It has been observed that by combining the silicon p-n junction wafers in a series configuration the capacitance effect can be bypassed, and a fission probe can be made with a resultant increase in sensitivity by a factor of ten while sustaining only a minor decrease in pulse height. Analysis further indicates that for n silicon wafers in series, if n(C(sub i)) + C(sub c)/C(sub b) less than 0.1 where C(sub i) and C(sub c) are the preamplifier input and cable capacitances, respectively, and C(sub b) is the junction capacitance of a single silicon wafer, there should be no substantial reduction in pulse height due to series circuitry.
This paper examines the possibility of mapping the surface composition of the moon from an orbiting spin-stabilized spacecraft, using gamma ray spectroscopy and a cooled germanium solid-state device as a detector. A design for accommodating the germanium detector gamma ray spectrometer was devised, and the detection sensitivity was applied to typical lunar-rock compositions. For sets comprising nine highland and 16 mare types, the most useful elements were found to be Mg, Al, K, Ti, Fe, U, and Th. An analysis of the expected instrument response to the gamma ray and neutron fluxes of water ice indicated that a neutron mode added to the spectrometer will be more sensitive than the gamma ray mode to the possible presence of polar ice. It was calculated that, with a pair of selected neutron absorbers and a model which provides that 2.5 percent of the area above 75-deg latitude is occupied by trapping sites, the instrument will provide a 1-yr mission detection limit of 0.056 percent H2O by weight for each polar region.
Measurement of spectra of cosmic-ray electrons of energies between 10 and 200 MeV over a one-year period starting 1968 March. The measurement was made with a detector system on board the OGO-5 satellite. The instrument consists of a solid-state dE/dx detector, a total-energy CsI detector, a gas Cerenkov threshold detector, and two scintillation guard counters. Time periods during which no solar-flare events were recorded were selected for the study. It was found that during these quiet periods there were numerous intensity variations of the electron flux. These variations, which are seen only below 25 MeV, do not show marked correlation with any solar or interplanetary-medium parameters. The flux of the electrons of energies above 25 MeV, on the other hand, showed a gradual decrease over the one-year period, paralleling the neutron monitor intensity. The parameter describing this long-term modulation is almost independent of the rigidity of the electrons in the reported energy range. The physical implication of the finding is discussed.
Current solid-state additive manufacturing methods, refined through costly and time-consuming trial and error, have spurred interest in computational models that replicate material behavior under typical thermomechanical conditions (e.g., strain-rate ~ 102 s−1). These models, however, struggle to capture time-dependent microstructural evolution. In this work, Additive Friction-Stir Deposition (AFSD) is used as a representative case study for part-scale quantification of microstructure evolution at a fine spatial resolution (200 μm) by examining a liquid-nitrogen-cooled stop-action build via energy-dispersive X-ray diffraction coupled with a multi-channel detector. These results inform modeling efforts by linking process asymmetry to stored plastic strain, residual elastic strain, and texture development, and unlike current state-of-the-art characterization methods (e.g., EBSD or neutron diffraction), this approach provides both the spatial resolution and collection efficiency necessary to quantify fine-scale microstructural heterogeneity over large component volumes. As such, this technique provides essential validation data for computational models, e.g., crystal plasticity, enabling future prediction of heterogeneous behavior in AFSD and other additive manufacturing processes.