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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Friction characteristics and interfacial recrystallization of single-crystal and polycrystalline copper sliding on aluminum oxide
Recrystallization effect on sliding friction of metals in single-crystal polycrystalline form
Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.
Tensile properties of single crystal and polycrystalline tungsten from 2500 to 5000 deg F
Orientation effect on friction characteristics of single crystal beryllium in vacuum
Friction characteristics of single and polycrystalline aluminum oxide in contact with various metals in vacuum
Sputtering yields of copper single crystals as function of normally incident argon-ion energy
Epitaxial growth of single crystal, impurity free metal films using clean alkali halide surfaces in ultrahigh vacuum
Vacuum friction characteristics of single and polycrystalline rhenium
Proton bombardment of high purity single crystal silicon
Chemical vapor deposition growth of epitaxial single crystal lithium ferrite thin films
Effects of impurities on epitaxy of fcc metals on alkali halides, and thin film orientation
Noble gas atomic scattering from Ag single crystal surfaces, describing three dimensional numerical experimental method for interaction parameters
Thermionic properties of tungsten surfaces partially covered with adsorbed cesium atoms
Cu single crystal sputtering yield and angular distribution for bombardment by Ar ions
Influence of surface films on friction and deformation of single crystal and polycrystalline gold
Influence of number of slip systems operating in magnesium on friction and effect of orientation of crystals on friction behavior
To limit the 4080-mc local oscillator signal power input to the beat oscillator modulator of the Telstar satellite communications repeater, a subsidiary absorption limiter was used which consisted of an optically polished sphere of single-crystal yttrium iron garnet (YIG), placed in a resonant transmission cavity between the amplified 4080-mc output of the traveling-wave tube and the BO modulator input. The limiter holds the output power nearly constant above a given input threshold; below this threshold the YIG is linear and introduces only a small loss. The threshold is determined, for a given sample at a given frequency, by the external magnetic bias field. Temperature compensation over the desired range was obtained by orienting the crystal with the dc magnetic field along a [100] or “hard” axis. The total weight of the limiter package, including the bias magnet and cavity, is 13 ounces.