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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1959

Interactions Between Oxygen and Nitrogen: O[Single Bond]N, O[Single Bond]N (sub 2), and O (sub 2)[Single Bond]N (sub 2)

Potential energy curves for 0-N interactions corresponding to the X (sup 2) II (sub t/2), X (sup 2) II (sub 3/2), A (sup 2) Eta (sup plus), B (sup 2) II, C (sup 2) II, D (sup 2) Eta (sup plus), E (sup 2) Eta (sup plus), and B prime (sup 2 delta) states of nitric oxide have been calculated from spectroscopic data by the Rydberg- Klein-Rees method. Curves for the (sup 4) II, (sup 2) Eta, (sup 4) Eta, (sup 6) Eta, and (sup 6) II states have been obtained from limited spectroscopic results and from relations derived from approximate quantum-mechanical calculations. Two semi-independent calculations have been made, and are in good agreement with each other. The quantum-mechanical relations also lead to approximate curves for the O[Single Bond]N, and O[Single Bond]N (sub 2) interactions over a limited range. The O (sub 2)[Single Bond]N (sub 2) interaction is consistent with one valid at larger separation distances which has been derived from high-temperature gas viscosity data.

Vanderslice, Joseph T.↗
NASA NTRS1961

Aerodynamic Loads at Mach Numbers from 0.70 to 2.22 on an Airplane Model Having a Wing and Canard of Triangular Plan Form and Either Single or Twin Vertical Tails Supplement I-Tabulated Data for the Model with Single Vertical Tails: Tabulated Data for the Model with Single Vertical Tail - Supplement 1

Tabulated results of a wind-tunnel investigation of the aerodynamic loads on a canard airplane model with a single vertical tail are presented for Mach numbers from 0.70 to 2.22. The Reynolds number for the measurements was 2.9 x 10(exp 6) based on the wing mean aerodynamic chord. The results include local static pressure coefficients measured on the wing, body, and vertical tail for angles of attack from -4 deg to + 16 deg, angles of sideslip of 0 deg and 5.3 deg, vertical-tail settings of 0 deg and 5 deg, and nominal canard deflections of 0 deg and 10 deg. Also included are section force and moment coefficients obtained from integrations of the local pressures and model-component force and moment coefficients obtained from integrations of the section coefficients. Geometric details of the model and the locations of the pressure orifices are shown. An index to the data contained herein is presented and definitions of nomenclature are given.

Peterson, Victor L.↗
NASA NTRS1994

Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy

A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83 K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.

Pandey, Raghvendra K.↗
NASA NTRS1990

1.00 MeV proton radiation resistance studies of single-junction and single gap dual-junction amorphous-silicon alloy solar cells

A comparative study of the radiation resistance of a-Si:H and a-SiGe:H single-junction and a-Si:H dual-junction solar cells was conducted. The cells were irradiated with 1.00-MeV protons with fluences of 1.0 x 10 to the 14th, 5.0 x 10 to the 14th and 1.0 x 10 to the 15th/sq cm and characterized using I-V and quantum efficiency measurements. The radiation resistance of single-junction cells cannot be used to explain the behavior of dual-junction cells at a fluence of 1.0 x 10 to the 15th/sq cm. The a-Si H single-junction cells degraded the least of the three cells; a-SiGe:H single-junction cells showed the largest reduction in short-circuit current, while a-Si:H dual-junction cells exhibited the largest degradation in the open-circuit voltage. The quantum efficiency of the cells degraded more in the red part of the spectrum; the bottom junction degrades first in dual-junction cells.

Abdulaziz, Salman↗
NASA NTRS2011

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Single Event Gate Rupture↗
NASA NTRS2017

Analyzing System on A Chip Single Event Upset Responses using Single Event Upset Data, Classical Reliability Models, and Space Environment Data

We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data. We expect to relate SEU behavior to system performance requirements. Our proposed methodology will provide better prediction of SEU responses in harsh radiation environments with confidence metrics. single event upset (SEU), single event effect (SEE), field programmable gate array devises (FPGAs)

single event effect (SEE)↗
NASA NTRS1982

Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers

Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.

Botez, D.↗
NASA NTRS1991

High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for pumping Er-doped fiber amplifiers

A 980-nm-ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well laser with a maximum single-ended output power of 240 mW from a facet-coated device is fabricated from a graded-index separate-confinement heterostructure grown by molecular-beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum-well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.

Larsson, A.↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
NASA NTRSDate not supplied

Single Throttle Design for the Subsonic Single Aft Engine (SUSAN) Transport Aircraft

NASA is conducting trade studies for a new hybrid-electric aircraft concept called the SUbsonic Single Aft eNgine (SUSAN) Electrofan. The SUSAN airplane is being designed as a 180-passenger commercial airplane and is expected to fly in the 2040 time frame. The flight deck of the SUSAN airplane is envisioned to resemble a typical two person flightcrew transport. Pilot control research issues include interfaces and display state elements needed for the 17 engine hybrid-electric propulsion system. A pilot study was conducted where one, two, and three throttle handles were the independent variable in a simulation experiment. The results from the study showed that the three throttle concepts were equivalent in terms of workload, situation awareness, and thrust control. However, the pilots rated the usability of the single throttle test case to be “good” compared to the rating of “excellent” for the two- and three-throttle cases. From these results, a follow-on pilot study is described to explore a redesigned single throttle concept with associated engine display concepts.

flight deck displays↗
NASA NTRS2010

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Single Event Gate Rupture (SEGR)↗
NASA NTRS1972

An adaptive observer for single-input single-output linear systems

It is shown that the full order adaptive observer for single input, single output, observable, continuous, stable, linear differential systems in the absence of a deterministic or random disturbance vector guarantees the vanishing of observation error, regardless of the size of the constant or slowly varying parameter ignorance. The observer parameters are directly changed in a Liapunov adaptive way so as to eventually yield the unknown full order Luenberger observer. The observer poles throughout may be placed freely in the stable region and no derivatives are required in the adaptive law.

Carroll, R. L.↗
NASA NTRS1973

An adaptive observer for single-input single-output linear systems.

A full order adaptive observer is described for observing the state of a single-input single-output observable continuous differential system with unknown parameters. Convergence of the observer states to those of the system is accomplished by directly changing the parameters of the observer using an adaptive law based upon Lyapunov stability theory. Observer eigenvalues may be freely chosen. Some restriction is placed upon the system input in that it must be sufficiently rich in frequencies in order to insure convergence.

Carroll, R. L.↗
NASA NTRS1976

Computer program for single input-output, single-loop feedback systems

Additional work is reported on a completely automatic computer program for the design of single input/output, single loop feedback systems with parameter uncertainly, to satisfy time domain bounds on the system response to step commands and disturbances. The inputs to the program are basically the specified time-domain response bounds, the form of the constrained plant transfer function and the ranges of the uncertain parameters of the plant. The program output consists of the transfer functions of the two free compensation networks, in the form of the coefficients of the numerator and denominator polynomials, and the data on the prescribed bounds and the extremes actually obtained for the system response to commands and disturbances.

Source record↗